(57) A semiconductor laser or traveling wave intensifier having an active layer between
two passive semiconductor layers, and a strip-shaped electrode geometry. According
to the invention the active layer is uniform in thickness. while at least one of the
passive layers within the strip-shaped geometry comprises a strip-shaped zone of deviating
construction and is built up from portions having different refractive indices n,
and n2. According to the invention it holds that
wherein n, is the refractive index of the portion which at least within said strip-shaped
zone adjoins the active layer, d, is the thickness thereof within the strip-shaped
zone, and d2 is the thickness thereof beside the strip-shaped zone.
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