(19)
(11) EP 0 017 360 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
29.10.1980 Bulletin 1980/22

(43) Date of publication A2:
15.10.1980 Bulletin 1980/21

(21) Application number: 80300764

(22) Date of filing: 12.03.1980
(84) Designated Contracting States:
CH DE GB NL SE

(30) Priority: 19.03.1979 US 21731
19.03.1979 US 22018

(71) Applicant: XEROX CORPORATION
 ()

(72) Inventors:
  • Connell, Neville G A
     ()
  • Johnson, Richard I
     ()

   


(54) Method of pretreating a substrate, method and apparatus for pretreating a substrate and depositing a thin metallic film thereon, and optical recording medium produced thereby


(57) Deposition of continuous pin-hole free tellurium films with thicknesses to less than 150A on a suitable substrate is achieved by first pretreating the substrate prior to film deposition, Ion sputtering or bombardment of the substrate surface with an inert gas prior to tellurium evaporation creates a dense coverage of nucleation sites on the substrate which improves the adhesiveness and resistance to abrasion and oxidation of the deposited film while providing very thin pin-hole free films of uniform thickness and desired crystallite orientation.






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