HYDROGEN ANNEALING PROCESS FOR SILICON GATE MEMORY DEVICE - Patent 0034168

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EP 0 034 168 A1

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(43)	Date of publication:
	26.08.1981 Bulletin 1981/34

(21)	Application number: 80901693.0

(22)	Date of filing: 07.08.1980

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International Patent Classification (IPC):

G11C 14/ 00^{( . )}
H01L 21/ 324^{( . )}
H01L 29/ 78^{( . )}
H01L 29/ 792^{( . )}

H01L 21/ 30^{( . )}
H01L 21/ 8247^{( . )}
H01L 29/ 788^{( . )}

(86)	International application number:
	PCT/US1980/001020

(87)	International publication number:
	WO 1981/000487 (19.02.1981 Gazette 1981/05)

(84)	Designated Contracting States:
	DE GB NL

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Priority:

13.08.1979 US 19790065806

(71)	Applicant: NCR CORPORATION
	Dayton, Ohio 45479 (US)

(72)	Inventors:
	TRUDEL, Murray Lawrence Centerville, OH 45459 (US) DHAM, Vinod Kumar Central Park Apartments, Apt. 92 Sunnyvale, CA 94087 (US)

(74)	Representative: Robinson, Robert George
	International Patent Department NCR Limited 206 Marylebone Road London NW1 6LY London NW1 6LY (GB)

(54)	HYDROGEN ANNEALING PROCESS FOR SILICON GATE MEMORY DEVICE