METHOD OF MAKING A PLANAR III-V BIPOLAR TRANSISTOR BY SELECTIVE ION IMPLANTATION AND A DEVICE MADE THEREWITH - Patent 0063139

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EP 0 063 139 A1

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(43)	Date of publication:
	27.10.1982 Bulletin 1982/43

(21)	Application number: 81902917.0

(22)	Date of filing: 15.10.1981

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International Patent Classification (IPC):

H01L 29/ 73^{( . )}
H01L 21/ 266^{( . )}
H01L 29/ 20^{( . )}

H01L 21/ 265^{( . )}
H01L 21/ 331^{( . )}
H01L 29/ 732^{( . )}

(86)	International application number:
	PCT/US1981/001394

(87)	International publication number:
	WO 1982/001619 (13.05.1982 Gazette 1982/12)

(84)	Designated Contracting States:
	DE FR GB

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Priority:

28.10.1980 US 19800201646

(71)	Applicant: HUGHES AIRCRAFT COMPANY
	Los Angeles, California 90045-0066 (US)

(72)	Inventors:
	JULLENS, Robert A. Tarzana, CA 91356 (US) VAIDYANATHAN, Kavasseri, V. Westlake Village, CA 91361 (US) ANDERSON, Carl L. Malibu, CA 90265 (US) DUNLAP, Howard L. Granada Hills, CA 91344 (US)

(74)	Representative: Colgan, Stephen James, et al
	CARPMAELS & RANSFORD 43 Bloomsbury Square London WC1A 2RA London WC1A 2RA (GB)

(54)	METHOD OF MAKING A PLANAR III-V BIPOLAR TRANSISTOR BY SELECTIVE ION IMPLANTATION AND A DEVICE MADE THEREWITH