(19)
(11) EP 0 070 809 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
13.07.1983 Bulletin 1983/28

(43) Date of publication A2:
26.01.1983 Bulletin 1983/04

(21) Application number: 82830171

(22) Date of filing: 15.06.1982
(84) Designated Contracting States:
DE FR GB NL SE

(30) Priority: 20.07.1981 IT 4893281

(71) Applicant: SELENIA INDUSTRIE ELETTRONICHE ASSOCIATE S.p.A.
 ()

(72) Inventors:
  • Misiano, Carlo
     ()
  • Simonetti, Enrico
     ()

   


(54) Adjustment to desired value (trimming) on thin film resistors by ion sputtering


(57) A technique for adjusting to the desired value, thin film integrated resistors is made known. This method consists in exposing a resistor, whose thickness is greater than that necessary for the desired resistance, to ionic sputtering of the resistive material until a the resistor thickness is such as to correspond to the desired electric resistance.
lon-sputter etching is realised iether by means of a plasma or by means of an ion-gun.






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