DEFRGBNLSE0070809EUROPEAN PATENT APPLICATIONA319830713EP8283017119820615489328119810720IT1983071319832819830126198304 6H 01C 17/24 AenAdjustment to desired value (trimming) on thin film resistors by ion sputteringfrAjustage de résistances en couche mince par pulvérisation à l'aide d'un faisceau d'ionsdeAbgleich von Dünnschichtwiderständen durch IonenzerstäubungSELENIA INDUSTRIE ELETTRONICHE ASSOCIATE S.p.A.Misiano, CarloSimonetti, EnricoDEFRGBNLSE19830713198328

A technique for adjusting to the desired value, thin film integrated resistors is made known. This method consists in exposing a resistor, whose thickness is greater than that necessary for the desired resistance, to ionic sputtering of the resistive material until a the resistor thickness is such as to correspond to the desired electric resistance.

lon-sputter etching is realised iether by means of a plasma or by means of an ion-gun.