ALTERABLE THRESHOLD SEMICONDUCTOR MEMORY DEVICE - Patent 0078318

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EP 0 078 318 A1

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(43)	Date of publication:
	11.05.1983 Bulletin 1983/19

(21)	Application number: 82901890.0

(22)	Date of filing: 07.05.1982

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International Patent Classification (IPC):

H01L 21/ 8247^{( . )}
H01L 27/ 112^{( . )}
H01L 29/ 792^{( . )}

H01L 21/ 8246^{( . )}
H01L 29/ 788^{( . )}

(86)	International application number:
	PCT/US1982/000600

(87)	International publication number:
	WO 1982/004162 (25.11.1982 Gazette 1982/28)

(84)	Designated Contracting States:
	AT BE CH DE FR GB LI NL

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Priority:

11.05.1981 US 19810262380

(71)	Applicant: NCR CORPORATION
	Dayton, Ohio 45479 (US)

(72)	Inventor:
	TOPICH, James Anthony Centerville, OH 45459 (US)

(74)	Representative: Robinson, Robert George
	International Patent Department NCR Limited 206 Marylebone Road London NW1 6LY London NW1 6LY (GB)

(54)	ALTERABLE THRESHOLD SEMICONDUCTOR MEMORY DEVICE