(57) in accordance with the present invention, there is provided a semiconductor rectifier
diode which has low loss, quick response and soft reverse recovery properties and
is composed of three consecutive layers, i.e., a p-type emitter layer (3), an n-type
base layer (4) and an n-type emitter layer (5), the p-type emitter layer being composed
of a first portion (31) and second portions (32) which surround said first portion,
have a higher impurity concentration as compared with said first portion, and extend
beyond said first portion toward said n-type base layer, and said base layer being
composed of a first layer portion (41) which is adjacent to said n-type emitter layer
and a second layer portion (42) which is located near a p-n junction (J,) side and
has a lower impurity concentration as compared with said first layer portion.
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