(19)
(11) EP 0 114 652 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
08.08.1984 Bulletin 1984/32

(43) Date of publication A2:
01.08.1984 Bulletin 1984/31

(21) Application number: 84100470

(22) Date of filing: 18.01.1984
(84) Designated Contracting States:
DE FR NL

(30) Priority: 19.01.1983 JP 591583

(71) Applicant: HITACHI, LTD.
 ()

(72) Inventors:
  • Inoue, Eisuke
     ()
  • Nonaka, Yasuhiko
     ()
  • Yamamoto, Masanao
     ()

   


(54) Image pickup tube target


(57) An image pickup tube target includes a Se-As-Te photoconductive layer whose arsenic concentration changes in a direction of thickness of the Se-As-Te photoconductive layer, a carrier extraction layer having a high arsenic concentration and being contiguous to the Se-As-Te photoconductive layer, a capacitive layer having a low arsenic concentration and being contiguous to the carrier extraction layer, a doped layer obtained by doping In2O3, MoO2 or a mixture thereof in an interface between the carrier extraction layer and the capacitive layer.






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