SEMICONDUCTOR INTEGRATED CIRCUITS CONTAINING COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES - Patent 0158670

(19)

(11)

EP 0 158 670 A1

(12)

(43)	Date of publication:
	23.10.1985 Bulletin 1985/43

(21)	Application number: 84903741.0

(22)	Date of filing: 04.10.1984

(51)

International Patent Classification (IPC):

H01L 21/ 763^{( . )}

H01L 27/ 092^{( . )}

(86)	International application number:
	PCT/US1984/001583

(87)	International publication number:
	WO 1985/001836 (25.04.1985 Gazette 1985/10)

(84)	Designated Contracting States:
	CH DE FR GB LI NL

(30)

Priority:

11.10.1983 US 19830540623
11.10.1983 US 19830540624

(71)	Applicant: AT&T Corp.
	New York, NY 10013-2412 (US)

(72)	Inventors:
	COQUIN, Gerald, Allan New Providence, NJ 07974 (US) LYNCH, William, Thomas Summit, NJ 07901 (US) PARRILLO, Louis, Carl Warren, NJ 07060 (US)

(74)	Representative: Watts, Christopher Malcolm Kelway, Dr., et al
	AT&T (UK) Ltd. 5, Mornington Road Woodford Green Essex, IG8 0TU Woodford Green Essex, IG8 0TU (GB)

(54)	SEMICONDUCTOR INTEGRATED CIRCUITS CONTAINING COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES