(19)
(11) EP 0 166 383 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
19.08.1987 Bulletin 1987/34

(43) Date of publication A2:
02.01.1986 Bulletin 1986/01

(21) Application number: 85107653

(22) Date of filing: 20.06.1985
(84) Designated Contracting States:
AT BE CH DE FR GB IT LI LU NL SE

(30) Priority: 25.06.1984 US 623858

(71) Applicant: ENERGY CONVERSION DEVICES, INC.
 ()

(72) Inventor:
  • Ovshinsky, Stanford R.
     ()

   


(54) Continuous deposition of activated process gases


(57) Apparatus for and a method of continuously depositing semiconductor alloy material characterized by stress-free bonds, tetrahedral coordination and a low density of defect states. The semiconductor material is deposited onto the substrate from energetic precursor process gas, density of states reducing elements, as well as dopant gas and compensating elements. Each of said energized species are discretely introduced into a deposition region for uncontaminated deposition and surface reaction on the substrate.






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