(19)
(11) EP 0 178 418 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
20.01.1988 Bulletin 1988/03

(43) Date of publication A2:
23.04.1986 Bulletin 1986/17

(21) Application number: 85110384

(22) Date of filing: 20.08.1985
(84) Designated Contracting States:
DE FR GB

(30) Priority: 14.09.1984 US 650389

(71) Applicant: International Business Machines Corporation
 ()

(72) Inventors:
  • Horr, Robert Arthur
     ()
  • Mohler, Rick Lawrence
     ()

   


(54) Process for making a semiconductor structure


(57) A process is provided for making semiconductor structures. such as CMOS structures, which includes forming on a surface of a semiconductor body (12) a layer from a material which is impervious to oxygen diffusion therethrough and patterning this layer to define the position of both the active and field isolation regions by partially removing this layer from the areas where the field isolation regions are to be formed. This oxygen impervious layer may be a dual dielectric structure consisting of a layer of silicon dioxide (14) adjoinmg the semiconductor body and a layer of silicon nitride (16) adjoining the silicon dioxide. The resulting structure includes an oxygen impervious layer (16b) which is used both for protecting all underlying oxidizing regions from oxidation and for defining the position of the active regions of the structure.






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