(19)
(11) EP 0 182 457 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
10.05.1989 Bulletin 1989/19

(43) Date of publication A2:
28.05.1986 Bulletin 1986/22

(21) Application number: 85305818.8

(22) Date of filing: 15.08.1985
(51) International Patent Classification (IPC)4: G11C 11/407
(84) Designated Contracting States:
DE FR GB NL

(30) Priority: 19.11.1984 US 672907

(71) Applicant: THORN EMI North America Inc.
Colorado Springs Colorado 80935 (US)

(72) Inventor:
  • Allan, James D.
    Colorado Springs Colorado 80907 (US)

(74) Representative: Palmer, Roger et al
PAGE, WHITE & FARRER 54 Doughty Street
London WC1N 2LS
London WC1N 2LS (GB)


(56) References cited: : 
   
       


    (54) A dynamic random access memory circuit and a method of stabilizing current surges in such a memory circuit


    (57) A dynamic random access memory circuit and a method of stabilizing current surges in such a memory circuit are provided. Peak current through each sense amplifier (Fig. 1) is stabilized through initiation of the sense and restore operations during the chip active period and completion of the sense and restore operation during the chip precharge period. The delay between first and second sensing signals (Øs1, 052) is controlled to be longer for those temperature and power supply conditions under which the chip is operating fastest. Correspondingly, the delay between first and second sensing signals is made shorter for those temperature and power supply conditions under which the chip is operating slowest. Overall peak current is limited to that drawn through small transistors used to begin turning on the sense amplifier. The duration of the second sensing signal is responsive to the temperature and power supply variation so it endures for an acceptable period in which to complete the sense and restore function. The second sensing signal timing is not determined by the first sensing signal.






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