| (19) |
 |
|
(11) |
EP 0 194 141 A3 |
| (12) |
EUROPEAN PATENT APPLICATION |
| (88) |
Date of publication A3: |
|
13.01.1988 Bulletin 1988/02 |
| (43) |
Date of publication A2: |
|
10.09.1986 Bulletin 1986/37 |
| (22) |
Date of filing: 05.03.1986 |
|
|
| (84) |
Designated Contracting States: |
|
DE GB NL |
| (30) |
Priority: |
06.03.1985 JP 4566785
|
| (71) |
Applicant: SHARP KABUSHIKI KAISHA |
|
() |
|
| (72) |
Inventors: |
|
- Yano, Seiki
()
- Yamamoto, Saburo
()
- Matsui, Sadayoshi
()
- Hayashi, Hiroshi
()
|
|
| |
|
| (54) |
A semiconductor laser |
(57) A semiconductor laser comprises a middle-positioned active layer sandwiched between
a lower-positioned active layer and an upper-positioned active layer, the refractivity
of each of said lower- and upper-positioned active layers being slightly different
from that of the middle-positioned active layer.