LOW-LEAKAGE JFET - Patent 0197116

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EP 0 197 116 A1

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(43)	Date of publication:
	15.10.1986 Bulletin 1986/42

(21)	Application number: 85905161.0

(22)	Date of filing: 30.09.1985

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International Patent Classification (IPC):

H01L 21/ 337^{( . )}
H01L 29/ 45^{( . )}

H01L 29/ 417^{( . )}
H01L 29/ 808^{( . )}

(86)	International application number:
	PCT/US1985/001908

(87)	International publication number:
	WO 1986/002203 (10.04.1986 Gazette 1986/08)

(84)	Designated Contracting States:
	DE FR GB NL

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Priority:

05.10.1984 US 19840658270

(71)	Applicant: Analog Devices, Inc.
	Norwood Massachusetts 02062 (US)

(72)	Inventors:
	LAPHAM, Jerome, F. Groton, MA 01450 (US) BROKAW, Adrian, Paul Burlington, MA 01803 (US)

(74)	Representative: Dr. Fuchs, Dr. Luderschmidt Dr. Mehler, Dipl.-Ing Weiss Patentanwälte
	Postfach 46 60 D-65036 Wiesbaden D-65036 Wiesbaden (DE)

(54)	LOW-LEAKAGE JFET