A FIELD EFFECT TRANSISTOR CURRENT SOURCE - Patent 0197965

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EP 0 197 965 A1

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(43)	Date of publication:
	22.10.1986 Bulletin 1986/43

(21)	Application number: 85904764.0

(22)	Date of filing: 18.09.1985

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International Patent Classification (IPC):

G05F 3/ 26^{( . )}

G05F 3/ 28^{( . )}

(86)	International application number:
	PCT/US1985/001805

(87)	International publication number:
	WO 1986/002180 (10.04.1986 Gazette 1986/08)

(84)	Designated Contracting States:
	DE FR GB IT NL

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Priority:

01.10.1984 US 19840656343
24.12.1984 US 19840685990

(71)	Applicant: AT&T Corp.
	New York, NY 10013-2412 (US)

(72)	Inventors:
	MORRIS, Bernard, Lee Allentown, PA 18104 (US) NAGY, Jeffrey, Jay Whitehall, PA 18052 (US) WALTER, Lawrence, Arthur Allentown, PA 18103 (US)

(74)	Representative: Buckley, Christopher Simon Thirsk
	AT&T (UK) Ltd. 5 Mornington Road Woodford Green Essex IG8 0TU Woodford Green Essex IG8 0TU (GB)

(54)	A FIELD EFFECT TRANSISTOR CURRENT SOURCE