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(11) | EP 0 232 117 A3 |
| (12) | EUROPEAN PATENT APPLICATION |
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| (54) | Semiconductor variable capacitance element |
| (57) A semiconductor variable capacitance element (1) comprises a floating electrode (23)
on the surface of a semiconductor substrate (21) for controlling the capacitance of
the element, an insulator film (25) covering the floating electrode to insulate the
latter from the exterior, a bias terminal 3 for applying a bias voltage to a capacitance
electrode (12) and a bias cut-off capacitor (4) for cutting off voltage applied to
the capacitance electrode and for connecting the element to external circuitry. The
bias cut-off capacitance is connected to the capacitance electrode (12). |