(19)
(11) EP 0 235 827 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
27.12.1989 Bulletin 1989/52

(43) Date of publication A2:
09.09.1987 Bulletin 1987/37

(21) Application number: 87103260.3

(22) Date of filing: 06.03.1987
(51) International Patent Classification (IPC)4: B41J 2/335, H01L 49/02
(84) Designated Contracting States:
DE FR GB NL

(30) Priority: 06.03.1986 JP 47458/86
22.04.1986 JP 92538/86

(71) Applicant: SONY CORPORATION
Tokyo 141 (JP)

(72) Inventors:
  • Yagino, Masanori
    6-chome Shinagawa-ku Tokyo (JP)
  • Hayashi, Hisao
    Shinagawa-ku Tokyo (JP)

(74) Representative: Schmidt-Evers, Jürgen, Dipl.-Ing. et al
Patentanwälte Mitscherlich & Partner, Postfach 33 06 09
80066 München
80066 München (DE)


(56) References cited: : 
   
       


    (54) Thermal print head containing super-thin polycrystalline silicon film transistor


    (57) Disclosed is herein a thermal print head containing super-thin polycrystalline silicon film transistors, comprising: heating resistors (3B, 2l) formed in a thin polycrystalline silicon layer (3) formed over a substrate (l); and a driving circuit comprising super-thin film transistors (4, 5, 6) each having a thin active layer (3c), formed in the polycrystalline silicon layer (3).







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