(19)
(11) EP 0 243 392 A1

(12)

(43) Date of publication:
04.11.1987 Bulletin 1987/45

(21) Application number: 86905875.0

(22) Date of filing: 23.09.1986
(51) International Patent Classification (IPC): 
H01L 21/ 762( . )
(86) International application number:
PCT/GB1986/000572
(87) International publication number:
WO 1987/002180 (09.04.1987 Gazette 1987/08)
(84) Designated Contracting States:
AT BE CH DE FR GB IT LI LU NL SE

(30) Priority: 27.09.1985 GB 19850023848

(71) Applicant: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and
London SW1A 2HB (GB)

(72) Inventors:
  • BENJAMIN, John, David
    Malvern Worcester WR14 3LG (GB)
  • KEEN, John, Michael
    Worcester WR8 OPN (GB)

(74) Representative: Russell, James, Dr., et al 
Defence Research Agency Intellectual Property Department DRA Farnborough
Farnborough, Hants. GU14 6TD
Farnborough, Hants. GU14 6TD (GB)

   


(54) A METHOD OF PRODUCING ISOLATED SILICON STRUCTURES