(19)
(11)
EP 0 247 119 A1
(12)
(43)
Date of publication:
02.12.1987
Bulletin 1987/49
(21)
Application number:
86906883.0
(22)
Date of filing:
20.11.1986
(51)
International Patent Classification (IPC):
H01L
21/
285
( . )
H01L
29/
45
( . )
(86)
International application number:
PCT/GB1986/000708
(87)
International publication number:
WO 1987/003425
(
04.06.1987
Gazette 1987/12)
(84)
Designated Contracting States:
AT BE CH DE FR GB IT LI LU NL SE
(30)
Priority:
29.11.1985
GB 19850029382
(71)
Applicant:
PLESSEY OVERSEAS LIMITED
Ilford Essex IG1 4AQ (GB)
(72)
Inventor:
FOSTER, David, John 11 Draycott Close
Northampton, NN3 3BD (GB)
(54)
TRANSISTOR HAVING SILICIDE CONTACTS AND METHOD FOR PRODUCING SAME