(19)
(11) EP 0 247 119 A1

(12)

(43) Date of publication:
02.12.1987 Bulletin 1987/49

(21) Application number: 86906883.0

(22) Date of filing: 20.11.1986
(51) International Patent Classification (IPC): 
H01L 21/ 285( . )
H01L 29/ 45( . )
(86) International application number:
PCT/GB1986/000708
(87) International publication number:
WO 1987/003425 (04.06.1987 Gazette 1987/12)
(84) Designated Contracting States:
AT BE CH DE FR GB IT LI LU NL SE

(30) Priority: 29.11.1985 GB 19850029382

(71) Applicant: PLESSEY OVERSEAS LIMITED
Ilford Essex IG1 4AQ (GB)

(72) Inventor:
  • FOSTER, David, John 11 Draycott Close
    Northampton, NN3 3BD (GB)

   


(54) TRANSISTOR HAVING SILICIDE CONTACTS AND METHOD FOR PRODUCING SAME