| (19) |
 |
|
(11) |
EP 0 249 942 A3 |
| (12) |
EUROPEAN PATENT APPLICATION |
| (88) |
Date of publication A3: |
|
09.08.1989 Bulletin 1989/32 |
| (43) |
Date of publication A2: |
|
23.12.1987 Bulletin 1987/52 |
| (22) |
Date of filing: 16.06.1987 |
|
|
| (84) |
Designated Contracting States: |
|
DE FR GB |
| (30) |
Priority: |
19.06.1986 JP 141473/86
|
| (71) |
Applicant: Tosoh Corporation |
|
Shinnanyo-shi,
Yamaguchi-ken, 746 (JP) |
|
| (72) |
Inventors: |
|
- Takahashi, Koyata
Sagamihara-shi
Kanagawa (JP)
- Ohnuki, Yukio
Machida-shi
Tokyo (JP)
- Kondoh, Akio
Atsugi-shi
Kanagawa (JP)
|
| (74) |
Representative: VOSSIUS & PARTNER |
|
Postfach 86 07 67
81634 München
81634 München (DE) |
|
| |
|
| (54) |
Thin film electroluminescent layer material |
(57) Disclosed is a thin film electroluminescent layer of a thin film electroluminescent
device comprising, as a light-emitting medium, a body of a mixture of ZnS and at least
one sulfide selected from MgS, CaS, SrS and BaS. The ZnS and the selected sulfide
are doped with a transition metal or rare earth element which is optically active
in the matrix. This EL device has good moisture resistance and weatherability and
is capable of emitting a color with a high brightness.