(19)
(11) EP 0 258 052 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
19.04.1989 Bulletin 1989/16

(43) Date of publication A2:
02.03.1988 Bulletin 1988/09

(21) Application number: 87307577.4

(22) Date of filing: 27.08.1987
(51) International Patent Classification (IPC)4: C23C 16/54, C30B 25/08, H01L 21/86
(84) Designated Contracting States:
AT BE CH DE FR GB IT LI NL SE

(30) Priority: 27.08.1986 US 900886

(71) Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Cambridge, MA 02139 (US)

(72) Inventors:
  • Gale, Ronald P.
    Sharon Massachusetts 02067 (US)
  • Fan, John C.C.
    Chestnut Hill Massachusetts 02167 (US)

(74) Representative: Harvey, David Gareth et al
Graham Watt & Co. Riverhead
Sevenoaks Kent TN13 2BN
Sevenoaks Kent TN13 2BN (GB)


(56) References cited: : 
   
       


    (54) Chemical vapor deposition reactor and method of chemical vapor deposition


    (57) A reactor, suitable for CVD processes presents a high aspect ratio to reactant gases. Substrates to receive CVD deposits are mounted on oppositely disposed susceptors (24L, R), in a vertical chimney-­type reactor (10, 16), and means (130, 134) are provided to rotate the susceptors (24L, R) about an axis perpendicular to gas flow through the reactor (10, 16). A loading mechanism (20) is provided for loading and unloading the susceptors (24) through a gate valve (40) atop the reactor (10, 16) and a diffuser (47) below the reaction zone (Rin) in reactor (10, 16) controls gas flow into the reaction zone (Rin) such that the flow is initially greater at the outer extremities of the zone (Rin) than at the inner core thereof.







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