METHODS FOR FABRICATING TRANSISTORS AND MOS TRANSISTORS FABRICATED BY SUCH METHODS - Patent 0258285

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EP 0 258 285 A1

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(43)	Date of publication:
	09.03.1988 Bulletin 1988/10

(21)	Application number: 87900849.0

(22)	Date of filing: 19.01.1987

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International Patent Classification (IPC):

H01L 29/ 78^{( . )}
H01L 21/ 263^{( . )}
H01L 29/ 04^{( . )}

H01L 21/ 20^{( . )}
H01L 21/ 336^{( . )}
H01L 29/ 06^{( . )}

(86)	International application number:
	PCT/GB1987/000030

(87)	International publication number:
	WO 1987/004563 (30.07.1987 Gazette 1987/17)

(84)	Designated Contracting States:
	AT BE CH DE FR GB IT LI LU NL SE

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Priority:

25.01.1986 GB 19860001830

(71)	Applicant: PLESSEY OVERSEAS LIMITED
	Ilford Essex IG1 4AQ (GB)

(72)	Inventor:
	OAKLEY, Raymond, Edward Brackley Northants (GB)

(74)	Representative: Sorenti, Gino
	Intellectual Property Department The Plessey Company plc 2-60 Vicarage Lane Ilford Essex IG1 4AQ Ilford Essex IG1 4AQ (GB)

(54)	METHODS FOR FABRICATING TRANSISTORS AND MOS TRANSISTORS FABRICATED BY SUCH METHODS