(19)
(11) EP 0 259 878 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
24.01.1990 Bulletin 1990/04

(43) Date of publication A2:
16.03.1988 Bulletin 1988/11

(21) Application number: 87113260.1

(22) Date of filing: 10.09.1987
(51) International Patent Classification (IPC)4: H01J 1/34, H01J 1/30
(84) Designated Contracting States:
DE FR GB

(30) Priority: 11.09.1986 JP 212821/86
03.10.1986 JP 234501/86
01.12.1986 JP 284240/86
16.12.1986 JP 297683/86
30.01.1987 JP 18191/87

(71) Applicant: CANON KABUSHIKI KAISHA
Tokyo (JP)

(72) Inventors:
  • Suzuki, Akira
    Yokohama-shi Kanagawa-ken (JP)
  • Tsukamoto, Takeo
    Atsugi-shi Kanagawa-ken (JP)
  • Shimizu, Akira
    Inagi-shi Tokyo (JP)
  • Sugata, Masao
    Yokohama-shi Kanagawa-ken (JP)
  • Shimoda, Isamu
    Zama-shi Kanagawa-ken (JP)
  • Okunuki, Masahiko
    Nishi Tama-gun Tokyo (JP)

(74) Representative: Tiedtke, Harro, Dipl.-Ing. et al
Patentanwaltsbüro Tiedtke-Bühling-Kinne & Partner Bavariaring 4
80336 München
80336 München (DE)


(56) References cited: : 
   
       


    (54) Electron emission element


    (57) An electron emission element comprises a P-type semiconductor substrate (1) and electrodes (2, 3) formed on both ends of the semiconductor substrate. A voltage is applied between said electrodes. The P-type semiconductor substrate is irradiated with light to emit the electrons, generated in the P-type semiconductor substrate by photoexcitation, from an electron emitting face (4) at an end of the P-type semiconductor substrate.







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