(19)
(11) EP 0 261 400 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
24.05.1989 Bulletin 1989/21

(43) Date of publication A2:
30.03.1988 Bulletin 1988/13

(21) Application number: 87112098.6

(22) Date of filing: 20.08.1987
(51) International Patent Classification (IPC)4: H01L 21/312, H01L 21/00, H01L 21/90
// C08G73/10
(84) Designated Contracting States:
DE FR GB

(30) Priority: 27.08.1986 JP 200971/86

(71) Applicant: HITACHI, LTD.
Chiyoda-ku, Tokyo 101 (JP)

(72) Inventors:
  • Watanabe, Hiroshi
    Mito-shi (JP)
  • Miura, Osamu
    Hitachi-shi (JP)
  • Miyazaki, Kunio
    Hitachi-shi (JP)
  • Numata, Shunichi
    Hitachi-shi (JP)
  • Otsuka, Kanji
    Higashiyamato-shi (JP)

(74) Representative: Beetz & Partner Patentanwälte 
Steinsdorfstrasse 10
80538 München
80538 München (DE)


(56) References cited: : 
   
     
    Remarks:
    The title of the invention has been amended (Guidelines for Examination in the EPO, A-III, 7.3).
     


    (54) Lift-off process for forming wiring on a substrate


    (57) In an process for forming a wiring conductor of CU, Al, Au or the like on a wiring substrate (1), a polyimide-based resin having the following unit structural formula is used as a lift-off material (2,3).

    wherein

    and n is an integer of 15,000 to 30,000. The lift-off material (2, 3) has a very good etching susceptibility and can be readily lifted off, and thus a wiring as thick as 10-20 µm can be formed.







    Search report