METHOD FOR FABRICATING DEVICES IN III-V SEMICONDUCTOR SUBSTRATES AND DEVICES FORMED THEREBY - Patent 0272303

(19)

(11)

EP 0 272 303 A1

(12)

(43)	Date of publication:
	29.06.1988 Bulletin 1988/26

(21)	Application number: 87904351.0

(22)	Date of filing: 22.06.1987

(51)

International Patent Classification (IPC):

H01L 33/ 00^{( . )}
H01L 21/ 285^{( . )}
H01S 5/ 00^{( . )}

H01L 21/ 28^{( . )}
H01L 29/ 45^{( . )}
H01S 5/ 042^{( . )}

(86)	International application number:
	PCT/US1987/001520

(87)	International publication number:
	WO 1988/000392 (14.01.1988 Gazette 1988/02)

(84)	Designated Contracting States:
	DE FR GB NL SE

(30)

Priority:

24.06.1986 US 19860878077

(71)	Applicant: AT&T Corp.
	New York, NY 10013-2412 (US)

(72)	Inventors:
	APPELBAUM, Amiram Fanwood, NJ 07023 (US) ROBBINS, Murray Berkeley Heights, NJ 07922 (US)

(74)	Representative: Blumbach Weser Bergen Kramer Zwirner Hoffmann Patentanwälte
	Radeckestrasse 43 D-81245 München D-81245 München (DE)

(54)	METHOD FOR FABRICATING DEVICES IN III-V SEMICONDUCTOR SUBSTRATES AND DEVICES FORMED THEREBY