(19)
(11) EP 0 276 140 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
26.07.1989 Bulletin 1989/30

(43) Date of publication A2:
27.07.1988 Bulletin 1988/30

(21) Application number: 88300455.8

(22) Date of filing: 20.01.1988
(51) International Patent Classification (IPC)4: H01L 33/00, H01S 3/19
(84) Designated Contracting States:
AT DE FR GB NL

(30) Priority: 23.01.1987 JP 12552/87

(71) Applicant: HIROSHIMA UNIVERSITY
Hiroshima City Hiroshima Pref. (JP)

(72) Inventors:
  • Yamanishi, Masamichi
    Hiroshima City§Hiroshima Pref. (JP)
  • Suemune, Ikuo 1-104, Hirodai-Gagara-Daiichi
    Higashihiroshima City Hiroshima Pref. (JP)
  • Kan, Yasuo B-206 Iwata Apartment
    Higashihiroshima City Hiroshima Pref. (JP)

(74) Representative: Senior, Alan Murray et al
J.A. KEMP & CO., 14 South Square, Gray's Inn
London WC1R 5LX
London WC1R 5LX (GB)


(56) References cited: : 
   
       


    (54) A light emitting semiconductor device


    (57) The disclosed light emitting semiconductor device has an n-type (or p-type) base region sandwiched by a p-type (or n-type) emitter region and a p-type (or n-type) collector region. An injecting voltage source is connected across the emitter region and base region so as to apply a constant voltage therebetween, while a control voltage source is connected across the emitter region and the collector region so as to selectively apply a reverse bias to a base-collector junction for controlling recombination of carriers injected to the base region. The control voltage source produces such non-emitting period voltage and emitting period voltage that carriers injected during the non-emitting period voltage are captured in the base region while the carriers thus captured are allowed to recombine during the emitting period voltage.







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