Field of the Invention
[0001] This invention relates to control circuitry for controlling conduction through a
load such as circuitry which controls current flow through a semiconductor device
thereof which is coupled to an incandescent lamp, a viscous loaded motor or other
similar load device whose impedance varies in a nonlinear manner as it turns on.
Background of the Invention
[0002] In many applications control circuitry used to control an incandescent lamp or other
load which has a nonlinear impedance during turn-on or warm-up comprises a semiconductor
device such as a power transistor (e.g., an n-channel Metal-Oxide-Silicon Field Effect
Transistor (MOSFET)). A single power n-channel MOSFET can be connected with its drain
connected to a power supply having a positive voltage +VDD and its source connected
to one terminal of an incandescent lamp. A second terminal of the lamp is connected
to ground potential. The gate of the MOSFET is typically coupled through a switch,
in many applications a hand operated switch, to a positive voltage source which typically
has a potential level of +VDD or in many cases +2VDD. When the switch is turned on
the MOSFET is enabled (turned on) and a current path is created from +VDD, through
the MOSFET and lamp, and then to ground. The electrical characteristics of an incandescent
lamp are such that while the lamp is cold its resistance (the "cold" resistance) is
relatively low. As the lamp starts to conduct it heats up and its resistance increases
in a nonlinear manner with its "hot" resistance being significantly greater than its
"cold" resistance. The MOSFET used must be designed to be able to dissipate a relatively
high amount of power as the lamp is turning on since there is a large current spike
generated and a significant portion of the voltage of the power supply is across the
drain-source of the MOSFET during turn on since the lamp's "cold" resistance is relatively
low.
[0003] FIG. 1 shows a graph of lamp current in amperes on the y-axis versus time (t) in
milliseconds (mS) on the x-axis for a lamp which when fully on and operating in steady
state draws about 6 amperes and has a resistance of about 2.25 ohms. Between t = 0+
and t = 2mS the lamp draws 42 amperes of peak current which decreases such that at
about t = 40mS a steady state current of 6 amperes is reached. FIG. 2 shows a graph
of the junction temperature in degrees C. on the y-axis of a MOSFET in series with
the lamp versus time (t) in milliseconds (mS) on the x-axis. The temperature of the
junction rapidly increases from ambient temperature at t = 0 to approximately 205
degrees C at t = 9mS and then decreases to 95 degrees C by t = 40mS. The thermal constant
of the MOSFET determines the rate of rise of the temperature thereof. The maximum
desirable temperature of many MOSFETS is approximately 160 degrees C. Thus under the
above described conditions the MOSFET can be damaged. One solution to this problem
is to increase the area of the MOSFET such that it can handle 42 amperes of peak current
without its temperature exceeding 160 degrees C. This solution is undesirable from
an economic view point since a larger area MOSFET requires more silicon and is therefore
more expensive to produce.
[0004] One prior art solution to the junction temperature problem is to pulse the potential
of the gate of the power MOSFET such that it is on for only a short period during
each cycle. This limits the average current during a cycle and moderates the temperature
rise of the MOSFET. One problem with this technique, which is sometimes denoted PWM
(Pulse Width Modulation), is that a plurality of relatively large current spikes are
generated which can easily be coupled as noise to other circuits using the same power
supply. This is very undesirable in some applications such as in an automobile where
turning on of the directional signals could cause multiple loud noises on the radio
or tape playing system.
[0005] It is desirable to be able to turn on a load whose impedance increases in a nonlinear
manner during turn-on using moderate cost control circuitry which includes a power
transistor without causing repetitive large noise signals.
Summary of the Invention
[0006] In one aspect, the present invention is directed to circuitry connectable to a load
whose impedance nonlinearly increases during turn-on. The circuitry comprises a device
(e.g., a power MOSFET) having a control terminal and first and second output terminals,
a first biasing means selectively coupled to the control terminal of the device, a
second biasing means selectively coupled to the control terminal of the device, and
detecting and coupling/decoupling means coupled to the second output terminal of the
device. The first biasing means, when coupled to the control terminal of the device,
biases on the device so as to facilitate current flow through the device. The second
biasing means, when coupled to the control terminal of the device, biases on the device
so as to facilitate a flow of current through the device which is greater than that
facilitated by the first biasing means. The detecting and coupling/decoupling means
effectively detects the impedance of the load and couples the first biasing means
to the control terminal of the device and decouples the second biasing means from
the control terminal of the device if the impedance of the load is at or below a preselected
level. If the impedance of the load is above the preselected level the detecting and
coupling/decoupling means couples the second biasing means to the control terminal
of the device and decouples the first biasing means from the control terminal of the
device.
[0007] In one embodiment the first biasing means is an essentially constant current generating
means which biases the control terminal of the device such that an essentially constant
current flows through the device. In another embodiment the first biasing means is
an essentially constant current means which biases the control terminal with an essentially
constant current in to the control terminal of the device such that the bias of the
control terminal increases with time as does the current flow through the device.
In both of the embodiments the second biasing means heavily biases on the device such
that it is essentially fully on with its output resistance being as low as can occur.
[0008] Other aspects and embodiments of the invention are set out in the claims.
[0009] We have discovered that the magnitude of the current spike generated by the series
combination of a transistor and a load whose impedance increases nonlinearly during
turn-on can be significantly reduced by first biasing the device such that a relatively
low level of current flows there through. The low level of current flow warms up the
load (e.g., a lamp) and causes its resistance to increase. After the resistance of
the device increases to a preselected level, the biasing is then substantially increased.
This allows the load to fully turn-on and to reach its "hot" (high) resistance state
which occurs during steady state operation. By reducing the magnitude of the current
spike it is feasible to significantly reduce the area of the transistor and thus to
reduce the cost of same.
[0010] Embodiments of the present invention, given by way of non-limiting example, will
now be described with reference to the accompanying drawings, in which:
Brief Description of the Drawing
[0011]
FIG. 1 shows a graph of current through the series combination of a transistor and
a lamp versus time for a prior art control circuit;
FIG. 2 shows a graph of junction temperature of the transistor of the prior art circuit
versus time;
FIG. 3 shows a soft start solid state switch in accordance with one embodiment of
the present invention;
FIG. 4 shows a graph of current through the switch of FIG. 3 versus time;
FIG. 5 shows a graph of temperature of a transistor of the switch of FIG. 3 versus
time;
FIG. 6. shows an alternate embodiment of part of the switch of FIG. 3;
FIG. 7 shows another alternate embodiment of part of the switch of FIG. 3;
FIG. 8 shows an illustrative embodiment of the logic circuit of FIG. 3;
FIG. 9 shows a soft start switch in accordance with another embodiment of the present
invention;
FIG. 10 shows a negative voltage generator which can be used with the switch of FIG.
9.
FIG. 11 shows an operational amplifier useful as a component of the switch of FIG.
9; and
FIG. 12 shows a soft start solid state switch in accordance with still another embodiment
of the present invention.
Detailed Description
[0012] Referring now to FIG. 3, there is shown within the dashed line rectangle a soft start
solid state switch 10 which comprises an n-channel Metal-Oxide-Silicon Field Effect
Transistor (MOSFET) 12 (also denoted as a device), n-channel MOSFETs 14, 16 and 60
(also denoted as switching devices), an operational amplifier 18, a two input comparator
20, a logic circuit 22, a voltage multiplier circuit 24, a resistor 26, a first voltage
reference source (Vref1) 28 and a second voltage reference source (Vref 2) 30. A nonlinear
load 32 (e.g., a lamp) is coupled to the drain of transistor 12 and to a terminal
34. A second terminal 35 of load 32 is coupled to a power supply VSS which is typically
ground potential. A switch 36 is coupled to one input terminal 38 of logic circuit
22. A first terminal of switch 36 is coupled to a first terminal 40 of a resistor
42. A second terminal of resistor 42 is coupled to a power supply +VCC. When switch
36 is closed (the wiper arm thereof connects terminals 36 and 38) soft start solid
state switch 10 first allows a relative low and essentially constant current to flow
through load 32. The impedance of load 32 increases as it warms up due to the current
flow there through. After the impedance of the load reaches a preselected value, switch
10 acts to allow a substantial increase in the current flow through load 32. Load
32 draws substantially more current until it reaches its "hot" (high impedance level)
operating state during which the current flowing there through reaches a steady state
level which is substantially lower than the magnitude of the maximum level reached
during turn-on.
[0013] As will be come clearer from the subsequent description, switch 10 first limits current
flow through load 32 to a relatively low essentially constant level. The relatively
low essentially constant current flow through the load 32 causes it to warm up and
for the impedance thereof to increase. Switch 10 senses the impedance of the load
32 as the low level essentially constant current increases the temperature and impedance
of load 32 until a preselected level of impedance exists. At this point switch 10
fully biases on transistor 12. The current flow through transistor 12 and load 32
significantly increases and the impedance of load 32 continues to increase until it
reaches its "hot" (high) impedance level associated with steady state operation. The
initial heating (denoted as preheating) of load 32 by the constant current flowing
there through results in an increase in its impedance such that when switch 10 fully
biases on transistor, the magnitude of the resulting current spike through load 32
and transistor 12 is substantially lower than would occur if preheating by a constant
current was not used. This permits transistor 12 to be a smaller area transistor than
is the case if transistor 12 is initially fully biased on and is allowed to draw as
much current as its initial "cold" impedance would dictate.
[0014] Transistor 12 is typically a large MOSFET which requires a substantial amount of
silicon area compared to all other components, devices, and circuitry of switch 10.
Accordingly, being able to keep the area of transistor 12 to a relatively modest level
significantly reduces the overall size of a silicon integrated circuit chip in which
switch 10 is fabricated and thus reduces cost.
[0015] The gate of transistor 12 is coupled to the sources of transistors 14 and 16, to
the drain of transistor 60 and to a node 46. The drain of transistor 16 is coupled
to an output of operational amplifier 18 and to a node 48. An output terminal of voltage
multiplier circuit 24 is coupled to the drain of transistor 14 and to a node 15. The
source of transistor 60 is coupled to VSS and to terminal 35. Voltage multiplier circuit
24 and the drain of transistor 12 are coupled to a power supply +VDD and to terminal
11. Transistor 12 has two sources. The first source is coupled to terminal 34, to
load 32, to a first terminal of resistor 26, to a first terminal of voltage reference
source 28, and to a first (positive) terminal of comparator 20. The second source
of transistor 12 is coupled to a second terminal of resistor 26, to a first input
(negative) terminal of operational amplifier 18 and to a node 50. A second terminal
of voltage reference source 28 is coupled to a second input (positive) terminal of
operational amplifier 18 and to a node 52. An output terminal of comparator 20 is
coupled to a second input terminal of logic circuit 22 and to a node 54. A first output
terminal of logic circuit 22 is coupled to the gate of transistor 60 and to a node
62. A second output terminal of logic circuit 22 is coupled to the gate of transistor
14 and to a node 56. A third output terminal of logic circuit 22 is coupled to the
gate of transistor 16 and to a node 58.
[0016] Assuming that initially switch 36 is open (in the position shown in FIG. 3) and load
32 has been off for a period of time. The voltage at terminal 34 is essentially zero
and the output of comparator 20 is logical "0", typically at or near ground potential.
Switch 36 is then closed as is the case if one desires to turn on the head lights
of an automobile. In such case switch 36 is typically a hand operated switch located
in the cab of an automobile and load 32 is the head light. This results in the output
of logic circuit 22 producing a "0", approximately 0 volts, at node 56 and a "1",
typically above +VDD when +VDD is in the range of +12 to +16 volts (the voltage of
an automobile battery)at node 58. These voltages bias off (disable) transistor 14
and bias on (enable) transistor 16. Operational amplifier 18 generates an output voltage
at terminal 48 which is coupled through biased on transistor 16 and which biases on
transistor 12. Current starts to flow from +VDD through transistor 12 and load 32
and into VSS. The potential existing on node 50 is compared by operational amplifier
18 with the voltage at node 52. The voltage level of Vref1 is selected to correspond
to a desired current level which is to selectively flow through transistor 12 and
load 32. The output voltage generated by operational amplifier 18 at node 48 assumes
a level which biases on transistor 12 and results in the current flow there through
being set to the desired essentially constant level. This level is one at which the
power being dissipated by transistor 12 is within the limits that transistor 12 can
dissipate without being damaged.
[0017] As this essentially constant current flows through transistor 12 and load 32, load
32 heats up and its resistance starts to increase from its "cold" (low) resistance
value towards its "hot" (high) resistance value. This increase in resistance causes
the potential of node 34 to increase. As soon as the voltage level of node 34 exceeds
that of Vref2, comparator 20 causes node 54 to become a "1". Vref2 corresponds to
a preselected impedance level. Thus "1's" are applied to terminals 38 and 54 of logic
circuit 22. This results in logic circuit 22 generating a "1" on node 56 and a "0"
on node 58. These conditions bias on transistor 14 and bias off transistor 16. This
couples an output voltage of voltage multiplier circuit 24 to the gate of transistor
12 and isolates the voltage of an output terminal 48 of operational amplifier 18 from
the gate of transistor 12. Accordingly, the voltage of the gate of transistor 12 is
increased from less than +VDD to about +2VDD. This heavily biases on transistor 12
which reduces its drain-source resistance and thereby allows it to conduct substantially
more current. The resistances of transistor 12 and load 32 and the magnitude of the
difference between +VDD and VSS determine the current which flows through the series
combination of both. Initially there is a relatively large current spike, which is
within the limits than can be safely dissipated by transistor 12, and then the current
drops to a substantially lower constant level which is a function of the resistance
of transistor 12 and the "hot" resistance of load 32.
[0018] Referring now to FIG. 4 there is shown a graph of current (the solid line) in amperes
and resistance (the dashed line) in ohms on the y-axis versus time (t) in milliseconds
(mS) on the x-axis of a typical load 32 such as a automobile head light (a lamp).
Between t = 0+ and t = 16mS the current flow through lamp 32 is essentially constant
at about 2 amperes. During this time period the resistance of lamp 32 increases from
about .2 ohms to about .4 ohms. At t = 16+mS a spike of current, having a maximum
level of about 24 amperes, occurs. This results because the resistance of lamp 32
has increased sufficiently by t = 16mS such that the voltage of node 34 is greater
than that of Vref2. Thus the gate of transistor 12 is now heavily biased on by voltage
multiplier circuit 24 since output terminal 48 of amplifier 18 is isolated from the
gate of transistor 12 and this time. Between t = 16+mS and t = 40mS the current flowing
through lamp 32 decreases and reaches a steady state value of about 6 amperes. During
this same time the resistance of lamp 32 increases from .4 ohms to 2.25 ohms. If when
switch 36 is closed the gate of transistor 12 were immediately heavily biased on then
the resulting current spike through transistor 12 would be, as is shown in the graph
of FIG. 1, 42 amperes which would damage transistor 12.
[0019] Referring now to FIG. 5, there is shown a graph of the junction temperature in degrees
C of the transistor 12 on the y-axis versus time (t) in milliseconds (mS) on the x-axis.
During t = 0+ to t = 16+mS the temperature of the junction of transistor 12 increases
at a somewhat constant rate to about 110 degrees C. At t = 16+mS the temperature rises
more rapidly reaching a maximum of approximately +150 degrees C at about t = 25mS.
Thereafter the temperature decreases such that at t = 40mS it is at about +125 degrees
C. It is thus clear that the temperature of transistor 12 essentially is limited to
+150 degrees C and thus there is no damage to transistor 12.
[0020] Referring now to FIG. 6, there is shown a transconductance operational amplifier
18a and constant current source 66 which can be substituted for operational amplifier
18, resistor 26 and voltage source (Vref1) 28 of FIG. 3.
[0021] Referring now to FIG. 7, there is shown a differential current amplifier 18c and
a constant current source 70 which can be substituted for the operational amplifier
18 , resistor 26 and voltage source (Vref1) 28 of FIG. 3.
[0022] Referring now to FIG. 8, there is shown illustrative embodiment of logic circuit
22 which comprises two input AND gates 80 and 82 and inverters 84 and 86. If switch
36 of FIG. 3 is open, the equivalent of a "0" is applied to terminal 38. Nodes 56
and 58 are "0's" and node 62 is a "1", independent of the signal level applied to
terminal 54. This condition isolates the gate of transistor 12 (node 46) from any
source of turn-on bias and thus transistor 12 is disabled and acts as an open circuit
between terminals 11 and 34. In addition, it enables (turns-on) transistor 60 which
pulls node 46 (the gate of transistor 12) to VSS which disables transistor 12.
[0023] If switch 36 is closed then the input signal to terminal 38 is a "1". This disables
transistor 60 and allows the potential of node 46 to be changed so that transistor
12 can be biased on. If the input signal to terminal 54 is a "0", then the output
signals appearing on nodes 56 and 58 are a "0" and a "1", respectively. This couples
the output of operational amplifier 18 to the gate of transistor 12 (node 46) and
isolates the output of voltage multiplier circuit 24 from the gate (node 46) of transistor
12. Accordingly, a relatively low magnitude essentially constant current flows through
transistor 12 and load 32. If with terminal 38 still being a "1", terminal 54 is switched
from a "0" to a "1", then terminals 56 and 58 switch to a "1" and a "0", respectively.
This isolates the gate of transistor 12 from the output of amplifier 12 and connects
it to the output of voltage multiplier circuit 24. This condition allows transistor
12 to conduct substantially more current from +VDD since its drain-source resistance
is at a low value. This point in time corresponds to when the resistance of load 32
has exceeded a preselected level which is represented by the level of Vref2.
[0024] Referring now to FIG. 9, there is shown within the dashed line rectangle a soft start
switch 200 in accordance with an embodiment of the present invention. Switch 200 comprises
an n-channel MOSFET 202, a two input comparator 276, a two input differential amplifier
230, diodes 224, 226, 270 and 274, zener diode 302, power supply by-pass capacitors
298, 300, 344, 346, 356 and 358, potentiometers 282 and 320, capacitor 348, switching
devices 306 and 322, current sensing coil (current transformer) 214, and resistors
216, 219, 220, 228, 234, 238, 240, 244, 248, 258, 264, 278, 288, 290, 294, 304, 310,
314, 324, 326, 328, and 352, two input NOR gates 254 and 260 and inverter 250. A lamp
204, (typically the headlight on an automobile) whose turn-on is to be controlled
by switch 10, is coupled to positive power supply +Vbat (typically the positive terminal
of the automobile battery) and to a terminal 212. A second terminal of lamp 204 is
coupled to the drain of MOSFET 202 and to a node 206. The source of transistor 202
is coupled to a negative terminal of the power supply -Vbat 208 (typically the negative
terminal of the automobile battery). A switch 268, typically a hand operated switch
located in the cab of an automobile, is coupled by one terminal thereof to terminal
212 and to +Vbat and is coupled by a second terminal thereof to a first terminal of
resistor 264 and to a terminal 266.
[0025] Transistor 202 controls current flow through lamp 202 such that when switch 268 is
turned on (the position shown in FIG. 9), transistor 202 is weakly biased on by a
source (essentially operational amplifier 330), which causes a relative low preselected
essentially constant current to flow through lamp 204 and transistor 202. As will
be explained in more detail herein below, the impedance of lamp 404 is monitored as
current flows there through and when the impedance of lamp 204 reaches a preselected
level, the weak bias applied to gate terminal 354 is cut off and a heavy (full on)
bias is applied to terminal 354. The heavy bias facilitates substantial current flow
through lamp 204 and transistor 202. As in switch 10 of FIG. 3, a relatively low level
of current flow between the lamp (load) and current controlling transistor is used
to first heat up the load (lamp) and to therefore cause the impedance (resistance)
thereof to increase. As the resistance of the load (lamp) reaches a preselected level,
the biasing applied to the gate of the current controlling transistor is significantly
increased such that the transistor is fully biased on. A current spike is generated
when the transistor is first fully biased on. The magnitude of the current spike is
significantly lower than would be the case if the transistor where not first weakly
turned on. This reduces cost by allowing the area of the transistor to be significantly
smaller than if the transistor had to safely carry a much higher current.
[0026] First terminals of each of resistors 216, 248 and 304, operational amplifier 330,
lamp 204, comparator 276, two input differential amplifier 230, switch 268 and capacitors
344 and 346 are coupled to terminal 212 and to +Vbat. First terminals of each of capacitors
298, 300, 356, and 358, second terminals of capacitors 344 and 346, first terminals
of each of resistors 219, 240, 290, 324, 326, and 340, a second terminal of differential
amplifier 230, the source of transistor 202, a first terminal of current sensing coil
(current transformer) 206, the anode of zener diode 302, and second and third terminals
of comparator 276 are coupled to a terminal 208 and to -Vbat. A second terminal of
operational amplifier 330 and second terminals of capacitors 356 and 358 are coupled
to a terminal 210 and to power supply -Va.
[0027] A second terminal of lamp 204 is coupled to the drain of transistor 202, to a first
terminal of resistor 220 and to a node 206. Current sensing coil 214 is wrapped around
the wire (no reference numbers shown) which couples the second terminal of lamp 204
to the drain of transistor 202. A second terminal of current sensing coil 214 is coupled
to a second terminal of resistor 340, to a first terminal of resistor 336 and to a
node 338. A second terminal of resistor 336 is coupled to a first input terminal (the
negative input terminal) of operational amplifier 330 and to a node 334. A second
terminal of operational amplifier 330 is coupled to a first terminal of capacitor
348 and to a terminal 335. A second terminal of capacitor 348 is coupled to an output
terminal of operational amplifier 330, to a first terminal of resistor 352, and to
a node 350. A second terminal of resistor 352 is coupled to the gate of transistor
202 and to a node 354. A second terminal of each of resistors 216 and 219 are coupled
to a node 218, to the anode of diode 224, to the cathode of diode 226, to a positive
first input terminal of differential amplifier 230 and to a node 218. A second terminal
of resistor 220 is coupled to the cathode of diode 224, to the anode of diode 226,
to a first terminal of resistor 228 to a second negative input terminal of differential
amplifier 230 and to a node 222. A second terminal of resistor 228 is coupled to an
output terminal of differential amplifier 230, to a first terminal of resistor 234,
and to a node 232. A second terminal of resistor 234 is coupled to a first terminal
of resistor 238, to the anode of diode 270, to the cathode of diode 274, to a first
positive input terminal of comparator 276 and to a node 236.
[0028] A second terminal of switch 268 is coupled to a first terminal of resistor 264 and
to a node 266. A second terminal of resistor 264 is coupled to first input terminals
of NOR gates 254 and 260, a second terminal of resistor 258 and to a node 259. A second
terminal of resistor 248 is coupled to an output terminal of comparator 276, to a
first terminal of resistor 244, to a first input terminal of inverter 250, to a second
input terminal of NOR gate 260 and to a terminal 246. A second terminal of resistor
244 is coupled to a second terminal of resistor 238, to a first terminal of resistor
240 and to a node 242. An output terminal of inverter 250 is coupled to a second input
terminal of NOR gate 254 and to a node 252. An output terminal of NOR gate 260 is
coupled to a control terminal of switch 322 and to a node 262. An output terminal
of NOR gate 254 is coupled to a control terminal of switch 306 and to a node 256.
A first terminal of resistor 278 is coupled to the cathode of diode 270, to the anode
of diode 274, to a second (negative) input terminals of comparator 276 and to a node
272. A second terminal of resistor 278 is coupled to the wiper arm of potentiometer
282 and to node 281. A first terminal of potentiometer 286 is coupled to a first terminals
of resistors 288 and 294 and to node 284. A second terminal of resistor 288 is coupled
to a second terminal of potentiometer 282, to a second terminal of resistor 290 and
to a node 286. A second terminal of resistor 294 is coupled to second terminals of
capacitors 298 and 300, the cathode of zener diode 302, a second terminal of resistor
304, a first terminal of resistor 310, a first output terminal of switch 306 and to
a node 296. Second output terminals of switches 306 and 322 are coupled to a first
terminal of resistor 328, a second terminal of resistor 326 and to a node 308. A second
terminal of resistor 328 is coupled to a second (positive) input terminal of operational
amplifier 330 and to a node 332. A first output terminal of switch 332 is coupled
to a wiper arm 318 of a potentiometer 320 and to a node 319. A first terminal of potentiometer
320 is coupled to a second terminal of resistor 310, to a first terminal of resistor
314 and to a node 312. A second terminal of resistor 314 is coupled to a second terminal
of resistor 324, to a second terminal of potentiometer 320 and to a node 316.
[0029] Switch 268 is shown with its wiper arm (no number shown) open such that terminals
212 and 268 are isolated from each other. This is the position of switch 268 which
is used to turn on lamp 204. Switches 306 and 322 are each typically an analog switch
such as the Motorola MC14016 which comprises a pair of complementary MOS transistors
and an inverter. The input terminal (node 256) switch 306 is coupled to the gate of
the n-channel transistor and an input terminal of the inverter of switch 306. The
output of the inverter is coupled to the gate of the p-channel transistor. The drain
of the n-channel transistor and the source of the p-channel transistor are coupled
to node 296. The source of the n-channel transistor and the drain of the p-channel
are coupled to node 308. The transistors and inverter of switch 322 are connected
essentially in the same way as the corresponding components of switch 306 but are
coupled to nodes 256, 319, and 308.
[0030] Assume that switch 268 is in the turned on position which is as is shown in FIG.
9. In this position switch 200 acts to allow current to flow through lamp 204 and
transistor 202 by, as will be clear from the below description, first weakly biasing
the gate (node 354) of transistor 202 on to establish a relatively low constant current
flow through lamp 204 and transistor 202 and then, after the resistance of lamp 204
reaches a preselected level, strongly biasing the gate of transistor 202 on so as
to allow a substantially higher current flow through lamp 204 and transistor 202.
The combination of resistors 216, 219, 220, 228, and 234 and differential amplifier
230 serve to compare the voltage at node 206 with the voltage at node 218 and to provide
at terminal 236 twice the difference. Diodes 224 and 226 serve to clamp to voltages
on nodes 218 and 222 to within approximately .8 volts of each other. The voltage level
appearing on node 236 serves as one input to the positive input terminal (node 236)
of comparator 276. A voltage divider network consisting of resistors 304, 294, 288,
potentiometer 282 and resistor 290 serves to generate a reference voltage, which corresponds
to a preselected resistance of lamp 204, that appears at the negative input terminal
(node 272) of comparator 276. If the voltage of node 236 is less than that of node
272 then the output of comparator 276 (node 246) is a "0". Since the first input terminals
of NOR gates 254 and 260 are at logical "0's" (a level of -Vbat which is typically
ground potential), and the second input terminal of NOR gate 260 is a "0", the output
(node 262) of NOR gate 260 is a "1". Inverter 250 inverts the "0" output of comparator
276 and thus applies a "1" to the second input terminal of NOR gate (node 256) being
a "1". A "1" and a "0" applied to the control terminals (nodes 256 and 262) of switches
322 and 306, respectively, cause switch 322 to couple node 319 to node 308 and cause
switch 306 to isolate node 296 from node 308. Node 319 is at a lower voltage level
than node 296. Accordingly the lower voltage level of node 319 is coupled to node
308. After some voltage drop due to resistor 328, the voltage of node 308 is applied
to the positive input terminal (node 332) of operational amplifier 330.
[0031] If the voltage appearing at node 236 is greater than that appearing at node 272,
(this corresponds to a condition in which the resistance of lamp 204 is greater than
the preselected resistance), then the output of comparator 276 is a "1" and the outputs
of NOR gates 254 and 260 are a "1" and a "0" respectively. This couples node 296 to
node 308 and isolates node 319 from node 308. Thus under these conditions the higher
voltage of node 296 controls the voltage of node 308 and consequently node 332 (the
positive input terminal of operational amplifier 330).
[0032] The combination of current sensing coil (transformer) 214 and resistors 340 and 336
serve to sense the amount of current flow through lamp 204 and transistor 202 and
to generate a voltage at node 334 (the negative input terminal of operational amplifier
330) which corresponds to this current level. Operational amplifier 330 compares the
voltage levels applied to its input terminals (nodes 332 and 334) and to generate
a bias level at the output terminal thereof (node 350) which causes a relatively weak
bias to be applied to the gate (node 354) of transistor 202 if switch 322 is on (node
319 is coupled to node 308) or causes a relatively heavily bias to be applied to the
gate (node 296 is coupled to node 308) if switch 306 is on. In either case the feedback
loop containing sensing coil 214 and operational amplifier 330 attempts to control
a relatively constant current flow through lamp 204 and transistor 202.
[0033] Referring now to FIG. 10, there is shown a negative voltage generator 648 which comprises
inverters 650 and 654, a plurality of inverters 668, resistors 662 and 666, capacitors
658, 678, 688 and 690 and diodes 682 and 684. Inverters 668 serve essentially as a
driver which has the desired drive capability. The combination of inverters 650 and
654, resistors 662 and 666 and capacitor 658 serves essentially as an oscillator.
All the inverters are powered by connecting same between +Vbat and -Vbat of FIG. 9.
Capacitor 678 serves as an ac couple. Diodes 682 and 684 serve as rectifiers with
capacitors 688 and 690 serving as filters. The output voltage -Va generated at node
686 is a negative voltage having a magnitude approximately equal to that of +Vbat
less about 1.6 volts. With +Vbat = +12 volts, -Va = -10.4 volts. Negative voltage
generator 648 is useful to generate to -Va used to power operational amplifier 330
of FIG. 9.
[0034] Referring now to FIG. 11, there is shown a typical embodiment of operational amplifier
330 of FIG. 9. The resistors shown (resistors 390 and 392) are used to set the gain
of amplifier 330 and are not shown in FIG. 9.
[0035] Referring now to FIG. 12, there is shown within the dashed line rectangle a soft
start solid state switch 400 in accordance with an embodiment of the present invention.
Switch 400 comprises an n-channel MOSFET 402, a two input comparator 438, a plurality
of clocked two input NOR gates 464, inverters 450, 458, and 506, NAND gates 454, 494
and 496, p-n-p bipolar transistors 470, 472, 476 and 478, diodes 422 and 424, resistors
410, 414, 430, 431, 434, 436, 446 and 448, potentiometer 416 and two by-pass capacitors
502 and 504. A positive terminal +Vbat 402 of a power supply, typically the battery
of an automobile, is coupled to a first terminal of a lamp 404 (typically a head light
of an automobile), to first terminals of resistors 410, 480, and 482, to the emitters
of transistors 476 and 478 and to first terminals of capacitors 502 and 504. A negative
terminal -Vbat 405 of the power supply is coupled to the source of transistors 402
to first terminals of resistors 431, 436 and 448, to each of first input terminals
of clocked NOR gates 464 and to second terminals of capacitors 502 and 504. Clocked
NOR gates 464 effectively act as clocked inverters. The use of a plurality of gates
464 is for obtaining the required drive capability to heavily bias on transistor 402.
A switch 468, typically a hand operated switch located in the cab of the automobile,
has a first terminal coupled to a first input terminal of switch 400 and to a node
484, and has a second terminal 448 coupled to ground potential which is typically
the same as -Vbat.
[0036] Transistor 402 controls current flow through lamp 404 such that when switch 486 is
turned on (the position shown in FIG. 12), transistor 402 is weakly biased on by an
essentially constant current supply to gate terminal 408 by a constant current source
comprising transistors 470, 472, 476 and 478. As will be explained herein below, the
resistance of lamp 404 is monitored as current flows there through. When the impedance
level of lamp 404 reaches a preselected level, the weak essentially constant current
biasing applied to gate terminal 408 is cut off and heavily (full on) biasing is applied
by clocked (gated) NOR gates 464 to gate terminal 408. The control of current flow
through transistor 402 and lamp 404 is very similar to the corresponding control of
current flow through transistor 12 and load 32 of FIG. 3 except that an essentially
constant current source which selectively weakly biases transistor 402 on and allows
a continuing build up of current flow through transistor 402 and lamp 404 is substituted
for the essentially constant generator current source of FIG. 3 which selectively
biases the gate of transistor 12 so as to generate a relatively low level constant
current flow through transistor 12 and load 32. In both embodiments a relatively low
level of current flow between the load (lamp) and current controlling transistor is
used to first heat up the load (lamp) and to therefore cause the impedance (resistance)
thereof to increase. As the resistance of the load (lamp) reaches a preselected level,
the biasing applied to the current controlling transistor is significantly increased
such that the transistor is fully biased on. A current spike is generated when the
transistor is fully biased on. The magnitude of the current spike is significantly
lower than would be the case if the transistor where not first weakly turned on. This
reduces cost since it allows for the area of the transistor to be significantly smaller
than if the transistor had to safely carry a much higher current.
[0037] A second terminal of lamp 404 is coupled to the drain of transistor 402, to a first
terminal of resistor 430 and to a node 406. A second terminal of resistor 430 is coupled
to a first terminal of resistor 434, to a second terminal of resistor 431 and to a
node 432. A second terminal of resistor 410 is coupled to a first terminal of resistor
414 and to a first terminal of potentiometer 416 and to a terminal 412. A second terminal
of resistor 414 is coupled to a second terminal of resistor 436, to a second terminal
of potentiometer 416 and to a node 420. A wiper member 418 of potentiometer 416 is
coupled to the cathode of diode 422, to the anode of diode 424, to a first (positive)
input terminal of comparator 438, to a first terminal of resistor 446 and to a node
426. A second terminal of resistor 434 is coupled to the anode of diode 422, to the
cathode of diode 424, to a second (negative) input terminal of comparator 438 and
to a node 428. An output terminal of comparator 438 is coupled to a first terminal
of resistor 442, to an input terminal of a inverter 450 and to a node 440. Second
output terminals of resistors 442, 446 and 448 are coupled to node 444. An output
terminal of inverter 450 is coupled to a first input terminal of NAND gate 454 and
to a node 452. An output terminal of NAND gate 454 is coupled to an input terminal
of inverter 458, to a first terminal of resistor 466 and to a node 456. An output
terminal of inverter 458 is coupled to control terminal of NOR gates 464 and to a
node 460. A second output terminal of resistor 466 is coupled to the bases of transistors
470 and 472, to the collector of transistor 470 and to a node 468. The collector of
transistor 472 is coupled to the output terminals of clocked NOR gates 464, to the
gate of transistor 402 and to a node 408. The emitter of transistor 472 is coupled
to the collector of transistor 476, to the bases of transistors 476 and 478 and to
a node 474. The emitter of transistor 470 is coupled to the collector of transistor
478 and to a node 475.
[0038] A first input terminal of switch 400 is coupled to a second terminal of resistor
482, to a first input terminal of NAND gate 494, to a first terminal of switch 486
and to a node 484. A second input terminal 492 of switch 400 is coupled to a second
terminal of resistor 480 and to a first input terminal of NAND gate 496. A second
input terminal of gate 494 is coupled to an output terminal of gate 496 and to a node
500. A second input terminal of gate 496 is coupled to an output terminal of gate
494, to a second input terminal of NAND gate 454, to an input terminal of inverter
506 and to a node 498. An output terminal of inverter 506 is coupled to second input
terminal of gates 464 and to a node 508.
[0039] NAND gates 494 and 496 are cross-coupled to form a flip-flop circuit. This helps
limit bounce by switch 486. With switch 486 in the closed position, with the wiper
arm contacting node 484, the output at node 498 is a "1". This "1" is coupled to an
input terminal of inverter 506 and to one input terminal of NAND gate 454.
[0040] Inverter 506 inverts the "1" input signal and thus a "0" is applied to the second
input terminals of gated NOR gates 464. Assume that a "1" signal exists at this time
on node 460. Gates 464 are thus gated off and the outputs appear as a high impedance.
Thus the gate 408 of transistor 402 is essentially isolated from gates 464 at this
time. A "1" at node 460 corresponds to a "0" at node 456 since inverter 458 couples
these two nodes. With a "0" at node 456, current flows from +Vbat through transistors
478 and 470. This current flow is mirrored through transistors 476 and 472 and flows
into the gate (node 408) of transistor 402 and weakly biases it on. Thus current begins
to flow from +Vbat, through lamp 404 and transistor 402 and returns to -Vbat. Transistors
472 and 476 continue to supply an essentially constant amount of current into the
gate of transistor 402 which increases the voltage of node 408 and thus increases
the on bias of transistor 402. This increases the current flow through lamp 404 and
transistor 402. As current flows through lamp 404, its resistance rises from a "cold"
low level to a "hot" higher level. The combination of resistors 410, 414, 436, 442,
446 and 448 and potentiometer 416 set up a reference voltage at node 426 (the positive
input terminal of comparator 438) which corresponds to a preselected resistance level.
The combination of resistors 430, 431 and 434 sets up a voltage at node 428 (the negative
input terminal of comparator 438) which corresponds to the resistance of lamp 404.
[0041] Assume lamp 404 has been off and that switch 486 is then closed so as to turn on
lamp 404. As current flows through lamp 404 its resistance increases and correspondingly
the voltage of the negative input terminal of comparator 438 (node 428) increases
relative to positive input terminal (node 426) of comparator 438. While node 428 is
at a lower or the same voltage as node 426, the output terminal (node 440) of comparator
438 is a logical "0". This "0" is inverted by inverter 450 and thus a "1" appears
at node 452 (the second input terminal of NAND gate 454). Since, as has been discussed
earlier herein above, with switch 486 closed (as is shown) a "1" is applied to the
first input terminal (node 498) of NAND gate 454. The result of the two "1" input
signals to NAND gate 454 is an output "0" signal at node 456 when switch 486 is first
closed to turn-on lamp 404.
[0042] As current continues to flow through lamp 404 and the level of current increases,
the voltage of node 428 increases until it exceeds the voltage of node 426. At this
time the output signal at node 440 of comparator 438 switches from a "0" to a "1".
This causes the second input terminal of NAND gate 454 to be a "0" which results in
the output terminal of NAND gate 454 becoming a "1". The "1" potential level is at
approximately +Vbat. Accordingly, current flow through transistors 470 and 478 ceases.
This cuts off current flow through transistors 476 and 472 into the gate (node 408)
of transistor 402. The "1" on node 456 is inverted by inverter 458 and thus a "0"
exists on node 460 and gates 464 are clocked on. As discussed earlier herein above,
gates 464 essentially act as clocked inverters since all the second input terminals
are coupled to -Vbat. Gates 464 invert the "0" input signal at each first input terminal
(node 508) thereof and generate a "1" at node 408 (the gate of transistor 402). This
heavily biases on transistor 402 which results in an initial current spike which then
dissipates with increasing time to a steady state current flow through lamp 404 and
transistor 402.
[0043] It is to be understood that the specific designs describe exemplary embodiments which
are merely illustrative of the spirit and scope of the invention. Modifications can
be made in the specific design consistent within the principles of the invention.
For example, the n-channel transistor used to control current through the lamp could
be a p-channel transistor or an n-p-n or p-n-p bipolar transistor providing the correct
polarity power supply and appropriate biasing is used. Still further, other appropriated
voltage and current sensing circuits could be used as could a variety of comparing
circuits and amplifiers. Furthermore, switches embodying the present invention can
be used for example to control a motor with a viscous or inverted load or a solenoid.
1. Circuitry connectable to a load (32;404) whose impedance nonlinearly increases
during turn-on, said circuitry comprising:
a device (12;402) having a control terminal and first and second output terminals
and being adapted such that current flow from one output terminal to the other output
terminal through the device can be controlled by bias applied to the control terminal;
first biasing means (18;470,472,476,478) selectively coupled to the control
terminal of the device for selectively biasing on the device such that current flows
through the device;
second biasing means (24;464) selectively coupled to the control terminal of
the device for selectively biasing the device to allow current flow therethrough which
is greater than that permitted by the first biasing means; and
detecting and coupling/decoupling means (20,22;438,454) coupled to the second
output terminal of the device for effectively detecting the impedance of the load
and for coupling the first biasing means or the second biasing means to bias on the
device while decoupling the other such that when the impedance of the load is at or
below a preselected level, the first biasing means controls current flow through the
device, and when the impedance of the load is above the preselected level, the second
biasing means controls current flow through the device.
2. Circuitry connectable to a load (32) whose impedance nonlinearly increases during
turn-on, said circuitry comprising:
a device (12) having a control terminal and first and second output terminals
and being adapted such that current flow from one output terminal to the other output
terminal through the device can be controlled by bias applied to the control terminal;
an essentially constant current generating means (18,26,28) selectively coupled
to the control terminal of the device for selectively biasing on the device such that
a preselected essentially constant current flows through the device;
biasing means (24) selectively coupled to the control terminal of the device
(12) for selectively biasing the device to allow current flow therethrough which is
greater than the constant current flow; and
detecting and coupling/decoupling means (20,22) coupled to the second output
terminal of the device for effectively detecting the impedance of the load and for
coupling the constant current means or the biasing means to bias on the device while
decoupling the other such that when the impedance of the load is at or below a preselected
level, the constant current generating means controls current flow through the device,
and when the impedance of the load is above the preselected level, the biasing means
controls current flow through the device.
3. Circuitry connectable to a load (404) whose impedance nonlinearly increases during
turn-on, said circuitry comprising:
a device (402) having a control terminal and first and second output terminals
and being adapted such that current flow from one output terminal to the other output
terminal through the device can be controlled by bias applied to the control terminal;
constant current biasing means (470,472,476,478) selectively coupled to the
control terminal of the device (402) for selectively biasing on the device with a
flow of essentially constant current into the control terminal such that the bias
of the control terminal of the device increases with time;
heavy biasing means (464) selectively coupled to the control terminal of the
device (402) for selectively more heavily biasing on the device than the constant
current biasing means; and
detecting and coupling/decoupling means (438,454) coupled to the second output
terminal of the device for effectively detecting the impedance of the load and for
coupling the constant current biasing means or the heavy biasing means to bias on
the device while decoupling the other such that when the impedance of the load is
at or below a preselected level, the constant current means controls current flow
through the device, and when the impedance of the load is above the preselected level,
the heavy biasing means controls current flow through the device.
4. Current control means for controlling current flow through a load (32) whose impedance
is nonlinear during turn-on comprising:
a device (12) having a control terminal and first and second output terminals
and being adapted such that current flow from one output terminal to the other output
terminal through the device can be controlled by signals applied to the control terminal;
current detection means (26) for detecting current flow through the device;
a reference level (Vref1) indicative of a desired flow of current through the
device;
first comparing and generating means (18) for comparing current flow through
the device with the reference level of current and for generating a signal which is
selectively coupled to the control terminal of the device and which modifies current
flow through the device such that the current flow through the device is essentially
equal to the reference level;
the second output terminal of the device being connectable to the load;
means for detecting voltage at the second output terminal of the device;
a reference voltage (Vref2) indicative of a preselected level of impedance of
the load;
a second comparing means (20) for comparing the voltage at the second output
terminal of the device with the reference voltage and for generating a first output
signal if the voltage at the second output terminal of the device is greater than
the reference voltage and for generating a second different output signal if the voltage
at the second output terminal of the device is equal to or less than the reference
voltage;
a voltage generator circuit (24);
first and second switching devices (14,16) each having a control terminal and
first and second output terminals;
the second output terminals of the first and second switching devices being
coupled to the control terminal of the device (12);
the first output terminal of the first switching device (14) being coupled to
an output terminal of the voltage generator circuit (24);
the first output terminal of the second switching device (16) being coupled
to an output terminal of the first comparing means (18); and
logic circuitry (22) coupled to an output terminal of the second comparing means
(20) and to the control terminals of the first and second switching devices (14,16),
said logic circuitry being adapted to cause the second switching device (16) to be
enabled so as to couple the first comparing and generating means (18) for comparing
if the voltage at the second output terminal of the device is equal to or less than
the reference potential and for causing the first switching device (14) to isolate
the voltage generator circuit (24) from the control terminal of the device (12) if
the voltage of the second output terminal of the device is less than or equal to the
reference voltage, and to selectively couple and isolate the voltage generator circuit
(24) and the first comparing means (18), respectively, to the control terminal of
the device if the voltage of the second output terminal of the device is greater than
the reference voltage.
5. Circuitry connectable to a load (32;404) whose resistance nonlinearly increases
during turn-on, said circuitry comprising:
a transistor (12;402) having a control terminal and first and second output
terminals, the first output terminal being connectable to the load;
first biasing means (18;470,472,476,478) selectively coupled to the control
terminal of the transistor for selectively enabling the transistor so as to facilitate
current flow through the transistor and the load;
second biasing means (24;464) selectively coupled to the control terminal of
the transistor for selectively enabling the transistor so as to facilitate current
flow through the transistor and the load with the magnitude of such current flow being
greater than resulting from the first biasing means; and
resistance detecting and coupling/decoupling means (20,22;438,454) connectable
to the load and being coupled to the first and second biasing means effectively detecting
the resistance of the load and for coupling the first biasing means or the second
biasing means to the control terminal of the transistor while decoupling the other
such that when the resistance of the load is at or below a preselected level, the
first biasing means is coupled to the control terminal of the transistor, and when
the resistance of the load is above the preselected level, the second biasing means
is coupled to the control terminal of the transistor.
6. Circuitry connectable to a load (32) whose resistance nonlinearly increases during
turn-on, said circuitry comprising:
a transistor (12) having a control terminal and first and second output terminals,
the first output terminal being connectable to the load;
first biasing means (18) selectively coupled to the control terminal of the
transistor for selectively enabling the transistor so as to facilitate current flow
through the transistor and the load;
second biasing means (24) selectively coupled to the control terminal of the
transistor for selectively enabling the transistor so as to facilitate current flow
through the transistor and the load with the magnitude of such current flow being
greater than resulting from the first biasing means;
resistance detecting means connectable to the load for detecting the resistance
of the load;
a comparator (20) having a first input terminal connectable to a reference level
(Vref2) corresponding to a preselected resistance value and having a second input
terminal coupled to the resistance detecting means, for comparing the resistance of
the load to the reference value and for generating a first signal at an output terminal
thereof if the value of the load resistance is less than or equal to the reference
level and for generating a second different signal if the value of the load resistance
is greater than the reference level;
first and second coupling/decoupling means (14,16) for selectively coupling
or decoupling the first and second bias means to the control terminal of the transistor;
a logic circuit (22) coupled by an input terminal to the output terminal of
the comparator (20) and coupled by first and second output terminals thereof to a
control terminal of the first coupling/decoupling means (16) and to a control terminal
of the second coupling/decoupling means (14), respectively; and
the logic circuit (22) being adapted to cause the first coupling/decoupling
means (16) to couple the first biasing means (18) to the control terminal of the transistor
(12) and to cause the second coupling/decoupling means (14) to isolate (decouple)
the second biasing means (24) from the control terminal of the transistor (12) if
the resistance of the load is equal to or less than the reference level, and to couple
the second biasing means (24) to the control terminal of the transistor and to isolate
the first biasing means (18) from the control terminal of the transistor if the load
resistance is greater than the reference level.
7. In combination:
a load (32;404) being characterized by a nonlinear impedance during turn-on;
a power supply having output terminals;
a device (12;402) having a control terminal and first and second output terminals
and being adapted such that current flow from one output terminal to the other output
terminal through the device can be controlled by bias applied to the control terminal;
a first terminal of the load being coupled to a first output terminal of the
device and the output terminals of the power supply being coupled to the second output
terminal of the device and to a second terminal of the load;
first biasing means (18;470,472,476,478) selectively coupled to the control
terminal of the device for selectively biasing on the device such that current flows
through the device and the load;
second biasing means (24;464) selectively coupled to the control terminal of
the device for selectively biasing the device such that current flows through the
device and the load with the level of current flow being greater than caused by the
first biasing means; and
detecting and coupling/decoupling means (20,22;438,454) coupled to the second
output terminal of the device for effectively detecting the impedance of the load
and for coupling the first biasing means or the second biasing means to bias on the
device while decoupling the other such that when the impedance of the load is at or
below a preselected level, the first biasing means controls current flow through the
device, and when the impedance of the load is above the preselected level, the second
biasing means controls current flow through the device.
8. The circuitry of any one of Claims 1,5,6 and 7, wherein the device is a field effect
transistor (FET).
9. The circuitry of Claim 8, wherein the device is an n-channel MOSFET.
10. The circuitry of Claim 9, wherein the MOSFET (12) has at least first and second
sources.
11. The circuitry of Claim 10, wherein the first biasing means (18) is coupled to
the first and second sources and to the gate of the MOSFET (12).
12. The circuitry of Claim 11, wherein:
the first biasing means comprises a resistor (26), an operational amplifier
(18), and a means for establishing a first reference voltage (28);
a first terminal of the resistor being coupled to a first input terminal of
the amplifier and to the first source of the MOSFET;
a second terminal of the resistor being coupled to the second source of the
MOSFET;
the means for establishing a first reference voltage is coupled to a second
input terminal of the amplifier; and
an output terminal of the amplifier is coupled to the gate of the MOSFET.
13. The circuitry of Claim 12, wherein the second biasing means comprises means (24)
for establishing a second voltage reference.
14. The circuitry of Claim 13, wherein the means (24) for establishing a second voltage
reference is a voltage multiplier circuit.
15. The circuitry of any one of Claims 12 to 14 when Claim 8 is dependent on any one
of Claims 1,5 and 7, wherein the detecting and coupling/decoupling means comprises:
a comparator (20) coupled by a first input terminal to the second source of
the MOSFET and coupled by a second input terminal to a further reference voltage (Vref2)
which corresponds to a preselected value of impedance of the load;
a logic circuit (22); and
first and second coupling/decoupling devices (16,18);
the first and second coupling/decoupling devices each having a control terminal
and first and second output terminals;
an output terminal of the comparator (20) being coupled to the logic circuit
(22);
a first output terminal of the logic circuit (22) being coupled to the control
terminal of the first coupling/decoupling device (16);
a second output terminal of the logic circuit (22) being coupled to the control
terminal of the second coupling/decoupling device (14);
the first and second output terminals of the first coupling/decoupling device
(16) being coupled to the output terminal of the amplifier (18) and to the gate of
the MOSFET (12), respectively; and
the first and second output terminals of the second coupling/decoupling device
(14) being coupled to the second biasing means (24) and to the gate of MOSFET (12),
respectively.
16. The circuitry of Claim 15, wherein the logic circuit includes means (80,82,84)
for biasing on the first coupling/decoupling device (16) and for biasing off the second
coupling/decoupling device (14) if the impedance of the load is at or below the preselected
level and for biasing on the second coupling/decoupling device (14) and for biasing
off the first coupling/decoupling device (16) if the impedance of the load is greater
than the preselected impedance level.
17. The circuitry of any one of Claims 6, 15 and 16, wherein the first and second
coupling/decoupling means (14,16) each comprise at least one MOS transistor.
18. The circuitry of any one of the preceding claims, wherein the load is an incandescent
lamp.
19. Circuitry connectable to a load the impedance of which increases during turn-on,
the circuitry comprising
a device, the flow of current through which, may be controlled, and
means to control the flow of current through the device,
the control means detecting the impedance of the load and enabling a relatively
small flow of current through the device while the impedance of the load is below
a predetermined level and enabling a relatively large flow of current through the
device when the impedance of the load is above the predetermined level.