<?xml version="1.0" encoding="UTF-8"?><!DOCTYPE ep-patent-document PUBLIC "-//EPO//EP PATENT DOCUMENT 1.4//EN" "ep-patent-document-v1-4.dtd"><ep-patent-document id="EP0299037A1" file="EP88901279NWA1.xml" lang="fr" doc-number="0299037" date-publ="19890118" kind="A1" country="EP" status="n" dtd-version="ep-patent-document-v1-4"><SDOBI lang="fr"><B000><eptags><B001EP>......DE....FRGB..IT....NL..........................................................................</B001EP><B003EP>*</B003EP><B007EP>EPregister to ST.36 EBD process v 1.0 kbaumeister@epo.org (15 Jan 2013)</B007EP></eptags></B000><B100><B110>0299037</B110><B130>A1</B130><B140><date>19890118</date></B140><B190>EP</B190></B100><B200><B210>88901279.0</B210><B220><date>19880126</date></B220><B240><B241><date>19880914</date></B241></B240><B250>fr</B250><B251EP>fr</B251EP><B260>fr</B260></B200><B300><B310>19870000861</B310><B320><date>19870126</date></B320><B330><ctry>FR</ctry></B330></B300><B400><B405><date>19890118</date><bnum>198903</bnum></B405><B430><date>19890118</date><bnum>198903</bnum></B430></B400><B500><B510EP><classification-ipcr sequence="1"><text>H01L  21/    76            A I                    </text></classification-ipcr><classification-ipcr sequence="2"><text>H01L  21/    00            A I                    </text></classification-ipcr><classification-ipcr sequence="3"><text>H01L  21/   308            A I                    </text></classification-ipcr><classification-ipcr sequence="4"><text>H01L  21/   762            A I                    </text></classification-ipcr><classification-ipcr sequence="5"><text>H01L  21/   763            A I                    </text></classification-ipcr><classification-ipcr sequence="6"><text>H01L  21/  8238            A I                    </text></classification-ipcr><classification-ipcr sequence="7"><text>H01L  27/    08            A I                    </text></classification-ipcr><classification-ipcr sequence="8"><text>H01L  27/   092            A N                    </text></classification-ipcr></B510EP><B540><B541>en</B541><B542>METHOD FOR PRODUCING ELECTRIC INSULATION ZONES IN A CMOS INTEGRATED CIRCUIT</B542><B541>fr</B541><B542>PROCEDE DE FABRICATION DE ZONES D'ISOLATION ELECTRIQUE DANS UN CIRCUIT INTEGRE CMOS</B542><B541>de</B541><B542>VERFAHREN ZUR HERSTELLUNG ELEKTRISCHER ISOLATIONSZONEN FÜR CMOS-INTEGRIERTE SCHALTUNGEN</B542></B540></B500><B700><B710><B711><snm>COMMISSARIAT A L'ENERGIE ATOMIQUE</snm><adr><str>31/33, rue de la Fédération</str><city>F-75015 Paris Cédex 15</city><ctry>FR</ctry></adr></B711></B710><B720><B721><snm>JEUCH, Pierre</snm><adr><str>13, rue du Parc</str><city>F-38170 Seyssins</city><ctry>FR</ctry></adr></B721></B720><B740><B741><snm>Lhoste, Catherine, et al</snm><adr><str>BREVATOME 25, rue de Ponthieu</str><city>F-75008 Paris</city><ctry>FR</ctry></adr></B741></B740></B700><B800><B840><ctry>DE</ctry><ctry>FR</ctry><ctry>GB</ctry><ctry>IT</ctry><ctry>NL</ctry></B840><B860><B861><dnum><anum>FR1988000041</anum></dnum><date>19880126</date></B861><B862>fr</B862></B860><B870><B871><dnum><pnum>WO1988005602</pnum></dnum><date>19880728</date><bnum>198817</bnum></B871></B870></B800></SDOBI></ep-patent-document>