BACKGROUND OF THE INVENTION
[0001] This invention is directed to a non-contacting method of cleaning surfaces by removing
small particulate matter, on the order of a few microns, therefrom. In the manufacture
of semiconductor integrated circuits in which a semiconductor substrate is subjected
to various lithographic processes, it is necessary that the substrate surface be kept
as clean as possible to minimize the number of defects in the final product and, it
is also necessary that the methods of cleaning are not destructive to the substrate
surface in any way. This invention provides a simple, non-contacting and effective
way to clean particulates of a size as low as 1 or 2 microns from these substrate
surfaces.
[0002] While this invention will be described in connection with cleaning of semiconductor
substrate surfaces, it is understood that this invention may be used wherever it is
necessary to remove small particulates from a surface.
[0003] It is therefore a primary object of this invention to provide a non-contacting method
of removing very small particulate material from surfaces.
SUMMARY OF THE INVENTION
[0004] The method which accomplishes the foregoing object involves the formation of a thin
film of high velocity gas between the surface to be cleaned and a cleaning device.
The gas film, being also a gas bearing, supports the cleaning device and thus forms
a self-regulating gap between the cleaning device and the surface so that the cleaning
device itself never contacts the surface to be cleaned. The cleaning device comprises
a plurality of bores for directing gas onto the surface and an opening for vacuum.
Preferably the bores are arranged in a circle and the opening for vacuum is located
centrally thereof. The gas film thickness is a function of incoming gas pressure and
vacuum. Embodiments of the invention include creating areas of turbulence and eddy
currents for aiding in the particulate removal. These areas are created by forming
pockets in the cleaning device to disturb the flow of gas. The method includes the
use of ionized gas and moving the cleaning device relative to the surface or moving
the surface relative to the cleaning device.
[0005] It is recognized that there is prior art showing the combination of air pressure
and vacuum but this prior art does not utilize this combination to create a planar
gas type bearing having film thicknesses and high velocity flows which can dislodge
and remove very small (1 or 2 micron) particulates. A typical example of the prior
art is shown in the patents to Till et al No. 4,026,701 which deals with cleaning
the imaging surface of an electrostatographic imaging member with gaps on the order
of 0.003 to about 0.015 inches to remove particles on the order of 0.003 to 0.010
inches. These cleaning devices operate in totally different environments,ie, paper
handling and printing, where the particles removed are much larger than the particles
removed by this invention.
BRIEF DESCRIPTION OF THE DRAWINGS
[0006]
Figure 1 is an elevational cross-sectional view of one embodiment of the cleaning
device shown spaced from a surface to be cleaned and showing the flow of gases across
the surface;
Figure 2 is a bottom view of the cleaning device, taken along line 2-2 of figure 1,
and looking in the direction of arrows and showing a plurality of bores for the flow
of pressurized gas and a central opening for vacuum;
Figure 3 illustrates the cleaning head spaced relative to a rotating vacuum chuck
which is holding a semiconductor substrate to be cleaned; and
Figure 4 is a partial cross-sectional view, enlarged over figures 1-3 showing a counterbore
in one bore of the cleaning device as an alternative embodiment.
DETAILED DESCRIPTION
[0007] As illustrated in the drawings, a gas film 10 is formed between adjacent surfaces
12 and 14 which also forms a gas bearing to space the surface 12 of a cleaning device
16 from the surface 14 of a substrate 20. This space is also denoted in the drawing
as gap G. The cleaning device is often referred to as a "puck", and by adjusting the
gas pressure appropriately, a small gap G, on the order of 20 to 50 microns, and hence
a high velocity flow of gas can be achieved. This high velocity flow of gas removes
small particulates, on the order of a few microns, from the surface 14 and also provides
a non-contacting method of cleaning the surface 14. In figures 1 and 2 it can be seen
that the puck 16 comprises a circular body with a plurality of bores 22 arranged preferably
in a circle as shown (although other geometries are feasible such as an oval, straight
line, etc) about a centrally located larger opening 24. The bores 22 are connected
by a circular conduit 26 and a bore 30 to a source of gas under pressure illustrated
as a block diagram 32 and the central opening 24 is connected to a vacuum pump 34
also illustrated as a block diagram; both being shown in figure 3. The bores 22 are
oriented to direct pressurized gas onto the surface 14 and the opening 24 is oriented
to remove gas and particulate matter in the area of the center of the surface 12.
In the embodiment illustrated, the puck is in two pieces 16a and 16b for manufacturing
purposes and are suitably coupled together, with the conduit 26 and bore 30 for the
flow of pressurized gas being formed by and between the two pieces.
[0008] The size of the gap G is self regulating and is determined by the gas pressure of
about 60 psi and a vacuum about 1 to 10 Torr. With such values and with the bores
22 being about 0.010 inches in diameter, the resulting thickness of gap G lies between
20 and 50 microns providing the correct conditions to remove particles as low as 1
or 2 microns with high efficiency.
[0009] It is understood that to clean an entire surface, the cleaning device 16 is movable
relative to the surface 14, and vice versa. Figure 3 shows one way of cleaning the
surface 14 by mounting the substrate 20 on a revolving vacuum chuck 36 and moving
the cleaning device radially to clean the entire surface 14.
[0010] To enhance the cleaning ability of the gas film, the puck surface 12 is provided
with a circular relief groove 40 of about 0.04 inches in depth surrounding the opening
24 and an outer ledge 42 of about the same size. The given depth is only by way of
example and other depth values are feasible as will be apparent to those skilled in
the art. These create turbulence and eddy currents in the high velocity flow of gas
to disturb and remove the small particulates.
[0011] In another embodiment, further turbulence and eddy currents in the high velocity
flow are created by providing the bores 22 with counterbores 22a of about 0.001 to
0.002 inches in depth. The given depth is only by way of example and other depth values
are feasible as will be apparent to those skilled in the art.
[0012] Finally, if desired, the removal of small particulate matter can further be enhanced
by the use of an ionized gas from the source 32.
[0013] It will be apparent to those skilled in the art that what makes this invention unique
is the very small gap which causes removal of very small particles and that there
are many other uses for this invention, such as cleaning flat optical surfaces or
optical surfaces having a radius of curvature much larger than the puck dimensions
of a few inches.
1. A method of cleaning very small particulates, on the order of 1 or 2 microns, from
a surface, comprising the steps of:
forming a thin gas film on said surface between a cleaning device and said surface
by impinging pressurized gas on said surface, and
moving said film across said surface.
2. The method as claimed in claim 1 further including the step of ionizing said gas
film.
3. The method as claimed in claim 1 including the step of further providing a source
of vacuum acting in cooperation with said gas film.
4. The method as claimed in claim 3 further including the step of ionizing said gas
film.
5. The method as claimed in claim 1 wherein said source of vacuum is in the center
of said gas film.
6. The method as claimed in claim 5 further including the step of ionizing said gas
film.
7. The method as claimed in claim 5 including the step of creating said gas film by
impinging gas in an arrangement surrounding a centrally located vacuum area.
8. The method as claimed in claim 7 further including the step of ionizing said gas
film.
9. The method as claimed in claim 7 wherein said arrangement of impinging gas is circular.
10. The method as claimed in claim 9 further including the step of ionizing said gas
film.
11. The method as claimed in claim 7 further including the step of forming areas of
turbulence between said vacuum area and said arrangement of impinging gas.
12. The method as claimed in claim 11 further including the step of ionizing said
gas film.
13. The method as claimed in claim 7 further including the step of forming areas of
turbulence in said gas film outside the area between said arrangement of impinging
gas.
14. The method as claimed in claim 13 further including the step of ionizing said
gas film.