(19)
(11) EP 0 359 513 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
19.12.1990 Bulletin 1990/51

(43) Date of publication A2:
21.03.1990 Bulletin 1990/12

(21) Application number: 89309232.0

(22) Date of filing: 12.09.1989
(51) International Patent Classification (IPC)5: H01L 23/64, H01L 23/498, H01L 23/055
(84) Designated Contracting States:
DE FR GB NL

(30) Priority: 14.09.1988 JP 231161/88

(71) Applicant: HITACHI, LTD.
Chiyoda-ku, Tokyo 100 (JP)

(72) Inventors:
  • Suzuki, Hideo
    Katsura-shi Ibaraki-ken (JP)
  • Shinohara, Hiroichi
    Hitachi-shi Ibaraki-ken (JP)
  • Ogihara, Satoru
    Hitachi-shi Ibaraki-ken (JP)
  • Nakanishi, Keiichirou
    Tokyo (JP)

(74) Representative: Paget, Hugh Charles Edward et al
MEWBURN ELLIS York House 23 Kingsway
London WC2B 6HP
London WC2B 6HP (GB)


(56) References cited: : 
   
       


    (54) Semiconductor chip carrier and method of making it


    (57) A semiconductor chip carrier for carrying a single chip (15) and having a built-in capacitor, comprises a ceramic insulator body (2) having first and second opposite main faces, and a plurality of conductor lines (6,7) comprising power lines, ground lines and signal lines for forming connections to said chip extending through said ceramic body (2) from one main face to the other. A layer (3) of ceramic dielectric material is embedded in said ceramic body remote from said main faces, and electrode layers embedded in the ceramic body (2) contact the capacitor layer (3), to form the built-in capacitor. The power and ground lines (16) pass through and contact the capacitor layer (3) and are connected to said electrodes so that said capacitor provides capacitance between the power lines and the ground lines. To minimize noise generation and improve signal processing speed, the signal lines (7) do not contact said capacitor layer (3) and extend past it at locations spaced laterally from it.







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