[0001] The present invention relates to a method of magneto-optically recording/erasing
information subjected to overwrite access and a magneto-optical information storage
medium which employs the method.
[0002] A thin film made of rare earth-transition metal amorphous alloys (to be referred
to a-RE-TM hereinafter) such as TbFe, TbCo, TbFeCo, GdTbFe, GdTbFeCo has an easy magnetization
axis in a direction perpendicular to its surfaces. Magnetic properties of this film
changes in accordance with temperature. Magneto-optical recording utilizes the above
properties. More specifically, a recording layer made of an a-RE-TM is irradiated
with a laser beam, and the temperature of the recording layer is increased to decrease
its coercive force to a level lower than an external magnetic field. A small reversed-magnetic
domain is formed in this portion by the external magnetic field, thereby recording
information. The small reversed-magnetic domain is caused to disappear to erase information.
In this manner, information is reproduced by using a magneto-optical effect such as
polar Kerr-rotation. Magneto-optical recording has advantages in non-contact accessibility,
compatibility of media, and a high recording density, which are common advantages
in optical recording. However, magneto-optical recording has a disadvantage in overwriting
as compared with magnetic recording.
[0003] Various types of overwriting techniques in magneto-optical recording have been proposed.
The most attractive one of them is of the light modulation and one beam type (which
is called one beam method).
[0004] The one-beam method is described in Published Unexamined Japanese Patent Application
No. Sho 62-175948. In this publication, an initial auxiliary magnetic field is applied
to a magneto-optical recording medium having a recording/reproducing layer and an
auxiliary recording layer to align the direction of magnetization of the auxiliary
recording layer in a predetermined direction. The magneto-optical recording medium
is irradiated with a modulated beam pulse. When a beam intensity is high, a bit having
one direction of magnetization is formed. However, when the beam intensity is low,
a bit having the other direction of magnetization is formed. According to this technique,
since the recording/reproducing layer is exchange-coupled with the auxiliary recording
layer, the exchange coupling force which is hard to control must be controlled to
have a specified magnitude with respect to a coercive force of each layer which changes
with a change in temperature. Therefore, it is difficult to manufacture the medium.
In addition, prior to overwrite operation, the direction of magnetization of the auxiliary
recording layer must be aligned in a predetermined direction. For this purpose, the
initial-magnetizing magnet for applying a magnetic field of several kOe must be large
in size, thus posing technical problems.
[0005] Another conventional technique disclosed in Published Unexamined Japanese Patent
Application No. Sho 62-154347 is related to a medium obtained by stacking a recording
layer and a bias layer having a compensation point, in which a nonmagnetic layer having
a magnetical insulation property is interposed therebetween. According to this technique,
the medium is designed such that the bias layer has different temperatures in the
write and erase modes. The bias layer must be designed to differentiate the directions
of saturated magnetization Ms of the bias layer at those two different temperatures.
Therefore, it is difficult to manufacture such a medium.
[0006] The light-modulated one-beam method has received a great deal of attention as an
overwrite technique in magneto-optical recording. However, in this method, it is difficult
to manufacture a medium and the structure of the medium is complicated. Therefore,
no practical magneto-optical recording method using this technique has been proposed.
[0007] The present invention is therefore intended to eliminate the above-mentioned drawbacks
and its object is to provide a method of magneto-optically recording/erasing information,
which can practically make the one-beam-power-modulated overwriting by way of a light
modulation scheme, and also to provide a magneto-optical information storage medium
used in this method.
[0008] According to an aspect of the present invention, there is provided a method of recording/erasing
information which comprises irradiating pulse-like laser beam onto a magneto-optical
information storage medium, the power of said laser beam being modulated into a first
level and a second level lower than the first level, said magneto-optical information
storage medium including recording and bias layers which are stacked one upon the
other to apply coupling interaction which is mainly magnetostatic interaction to each
other the medium satisfying condition T
1 > T
2 > T,
R, where T
rR is a magnetization-reversing temperature of the recording layer, T, is a temperature
of a region irradiated with the laser beam having the first power level, and T
2 is a temperature of a region irradiated with the laser beam having the second power
level, and said medium satisfying condition H
CR(T
rR) ≦ H
S1 - H
B1 (where H
B1 is a leakage magnetic field leaking from the bias layer and applied to the recording
layer and H
S1 is a self-leakage magnetic field leaking from the recording layer, both H
B1 and H
S1 being values obtained when the medium is cooled from the temperature T, to the temperature
T
rR, and H
CR(T
rR) is a coercive force of the recording layer at the temperature T
rR) when the recording and bias layers are cooled from the temperature T, to the temperature
T
rR, and condition H
CR(T
rR) ≦ H
B2 - H
s2 (where H
B2 is a leakage magnetic field leaking from the bias layer and applied to the recording
layer and H
S2 is a self-leakage magnetic field leaking from the recording layer, both H
B2 and H
S2 being values obtained when the medium is cooled from the temperature T
2 to the temperature T,
R, and H
cR(T
rR) is a coercive force of the recording layer at the temperature T
rR) when the recording and bias layers are cooled from the temperature T
2 to the temperature T
rR; wherein when the medium is irradiated with the laser beam pulse having the first
level and the frradiated region is cooled from the temperature T, to T
rR, the magnetization of the beam-irradiated region of the recording layer is directed
to a direction of the leakage magnetic field leaking from the recording layer, and
when the medium is irradiated with the laser beam pulse having the second power level
and the irradiated region is cooled from the temperature T
2 to the temperature T
rR the magnetization of the beam-irradiated region of the recording layer is directed
a direction of the leakage magnetic field applied from the bias layer to the recording
layer.
[0009] According to another aspect of the present invention, there is provided a magneto-optical
information storage medium comprising a recording layer for recording information
and a bias layer for applying a bias magnetic field to the recording layer, the recording
and bias layers having perpendicular magnetic anisotropy and being stacked one upon
the other to apply coupling interaction which is mainly magnetostatic interaction
to each other, the medium being irradiated with modulated laser beam pulses having
a first level and a second level lower than the first level so as to record/erase
the information, wherein the medium satisfies condition T, > T
2 > T
rR where T
rR is a magnetic inversion temperature of the recording layer, T, is a temperature of
a region irradiated with the laser beam having the first power level, and T
2 is a temperature of a region irradiated with the laser beam having the second power
level, and satisfies condition H
CR(T
rR) ≦ H
S1 - H
B1 (where H
B1 is a leakage magnetic field leaking from the bias layer and applied to the recording
layer and H
S1 is a self-leakage magnetic field leaking from the recording layer, both H
B1 and H
B2 being values obtained when the medium is cooled from the temperature T, to the temperature
T,
R, and H
CR(T
rR) is a coercive force of the recording layer at the temperature T
rR) when the recording and bias layers are cooled from the temperature T, to the temperature
T,
R, and condition HCR(TrR) ≦ H
B2 - H
S2 (where H
B2 is a leakage magnetic field leaking from the bias layer and applied to the recording
layer and H
S2 is a self leakage magnetic field leaking from the recording layer, both H
B2 and H
S2 being values obtained when the medium is cooled from the temperature T
2 to the temperature T
rR, and H
CR(T
rR) is a coercive force of the recording layer at the temperature TrR) when the recording
and bias layers are cooled from the temperature T
2 to the temperature T
rR.
[0010] According to still another aspect of the present invention, there is provided a magneto-optical
recording medium comprising a recording layer for recording information and a bias
layer for applying a bias magnetic field to the recording layer, the recording and
bias layers having perpendicular magnetic anisotropy and being stacked one upon the
other to apply coupling interaction which is mainly magnetostatic interaction to each
other, the recording layer containing an alloy represented by formula (Gd
xDy
t-x)
yFe
1-y (wherein x and y are expressed in at% and satisfy 0 < x < 100 and 13 < y < 35).
[0011] An intermediate layer consisting of a dielectric material can be formed between the
recording and bias layer to eliminate an exchange coupling force acting therebetween.
[0012] When the magneto-optical recording medium is irradiated with laser beam modulated
two levels as described above, the magnitudes of the magnetic field leaking from the
recording layer and the magnetic field leaking from the bias layer to the recording
layer are determined such that the direction of magnetization of a recording layer
portion irradiated with the laser beam having the high power and cooled to the magnetic
inversion temperature is opposed to that irradiated with the beam pulse having the
low power and cooled to the magnetization-reversing temperature. Therefore, a practical
one-beam power modulation overwrite operation can be performed.
[0013] This invention can be more fully understood from the following detailed description
when taken in conjunction with the accompanying drawings, in which:
Fig. 1 is a sectional view of a magneto-optical information storage medium according
to an embodiment of the present invention;
Fig. 2 is a sectional view of a magneto-optical information storage medium according
to another embodiment of the present invention;
Fig. 3A is a graph showing a relationship between the temperature and the coercive
force of recording and bias layers of the medium shown in Fig. 1;
Fig. 3B is a graph showing a relationship between the temperature and saturated magnetization
of the recording and bias layers of the medium shown in Fig. 1;
Figs. 4A to 4E are views showing a relationship between the directions of magnetization
and the temperatures of the recording and bias layers of the medium of Fig. 1 in the
write mode;
Fig. 5 is a view showing a magnetization distribution of beam irradiated portions
of the recording and bias layers in the magnetization state shown in Fig. 4C;
Figs. 6A to 60 are views showing a relationship between the directions of magnetization
and the temperatures of the recording and bias layers of the medium shown in Fig.
1 in the erase mode;
Fig. 7 is a view showing a magnetization distribution of beam irradiated portions
of the recording and bias layers in the magnetization state shown in Fig. 6B;
Figs. 8A to 8C are views showing a magnetization distribution of irradiated portions
of the recording and bias layers when a nonrecorded portion of the medium is irradiated
with the laser beam having the second power level; and
Fig. 9 is a view showing a magnetization distribution of beam irradiated portions
of the recording and bias layers in a magnetization state shown in Fig. 8B.
[0014] Preferred embodiments of the present invention will be described in detail with reference
to the accompanying drawings. Fig. 1 is a sectional view of a magneto-optical information
storage medium which employs a recording/erasing method according to an embodiment
of the present invention. Reference numeral 1 denotes a substrate made of glass or
a transparent resin. A recording layer 2, an intermediate layer 3, a bias layer 4,
and a protective layer 5 are sequentially stacked on the substrate 1. These layers
are preferably formed by thin-film formation techniques such as sputtering.
[0015] The recording and bias layers 2 and 4 have axes of easy magnetization perpendicular
to their surfaces and are made of an a-RE-TM alloy such as TbFe, TbCo, TbFeCo, GdTbFe,
GdTbFeCo, or GdTbCo.
[0016] According to the present invention, magnetization-reversal of the recording layer
2 is not performed by an exchange coupling force from the bias layer but by leakage
magnetic fields leaking from both the layers and an application of an external magnetic
field, if needed. These layers are stacked to mainly cause magnetostatic coupling
so as to prevent the exchange coupling force. Even if the exchange coupling force
acts on the medium, the exchange coupling force is preferably set to be a value very
smaller than the magnitude of the bias magnetic field.
[0017] The intermediate layer 3 is formed to shield the exchange coupling force and preferably
made of a dielectric material such as Si-N, Si-0, or Zr-0. If the exchange coupling
force is sufficiently small, the intermediate layer 3 can be omitted.
[0018] When the intermediate layer 3 is formed, its thickness is not limited to a specific
value. The thickness can be appropriately determined in consideration of Kerr enhancement
in the read mode, absorption efficiency of the laser beam and thermal diffusion, depending
on types of material. The thickness is preferably 2,000 A or less. In order to eliminate
the exchange coupling force between the recording layer 2 and the bias layer 4, the
thickness of the intermediate layer 3 is sufficiently several ,4, and is preferably
small enough to sufficiently apply the leakage magnetic field from the bias layer
4 to the recording layer 2, and is preferably small enough to heat the bias layer
to the temperature T, during laser beam radiation. From these points of view, the
thickness preferably falls within the range of 5 to 500 Å. The intermediate layer
3 may be opaque since the bias layer 4 does not contribute to the reproduced signal
from the beginning and it has only to conduct heat upon laser beam radiation.
[0019] The thickness of the bias layer 4 is preferably large enough to sufficiently apply
the leakage magnetic field to the recording layer and is also preferably small enough
to allow heating of the bias layer 4 to the temperature T, upon laser beam radiation.
From these points of view, the thickness of the bias layer 4 preferably falls within
the range of 250 to 5,000 A and more preferably 1,000 to 3,000 A.
[0020] The thickness of the recording layer 2 is preferably large enough to apply a sufficiently
high leakage magnetic field to itself and is also preferably small enough to be heated
to the temperature T
1 and to sufficiently heat the bias layer during laser beam radiation. From these points
of view, the thickness of the recording layer 2 preferably falls within the range
of 100 to 5,000 A and more preferably 150 to 1,500 ,4.
[0021] In the formation of the recording and bias layers 2 and 4 by the thin-film formation
techniques such as sputtering, it is difficult to form films having sufficient perpendicular
magnetic anisotropy when the film thickness is less than 100 Å.
[0022] The protective layer 5 made of, e.g., a dielectric material and has a function to
protect the recording and bias layers 2 and 4. The protective layer 5 is preferably
formed but need not be formed.
[0023] An underlaying layer 6 may be formed between a substrate 1 and a recording layer
2, as shown in Fig. 2.
[0024] This magneto-optical information storage medium is irradiated with pulse-like laser
beam power-modulated into a first beam power level (recording level) and a second
level (erase level) lower than the first level, in accordance with information to
be recorded, thereby recording and erasing the information.
[0025] The recording layer 2 has a magnetization reversal temperature. The medium satisfies
inequality T, > T
2 > T
rR where T
rR is the magnetization-reversing temperature of the recording layer, T
1 is the temperature of a region irradiated with the laser beam having the first level,
and T
2 is the temperature of a region irradiated with the laser beam having the second level.
[0026] Preferably, the temperatures T, and T
2 fall within a range of temperatures to which the recording layer 2 can be heated
when irradiated with a beam emitted from a semiconductor laser of the ordinary type
whose maximum output power is about 15 mW.
[0027] The medium also satisfies inequality H
CR(T
rR) ≦ H
si - H
B1 (where H
B1 is the leakage magnetic field leaking from the bias layer and applied to the recording
layer and H
S1 is the selfleakage magnetic field leaking from the recording layer, both H
B1 and H
S1 being values obtained when the medium is cooled from the temperature T, to the temperature
T
rR, and H
CR(T
rR) is the coercive force of the recording layer at the temperature T
rR) when the recording and bias layers are cooled from the temperature T, to the temperature
T
rR, and inequality HCR(T,R) ≦ H
B2 - H
S2 (where H
B2 is the leakage magnetic field leaking from the bias layer and applied to the recording
layer and H
S2 is the self-leakage magnetic field leaking from the recording layer, both H
B2 and H
S2 being values obtained when the medium is cooled from the temperature T
2 to the temperature T
rR, and H
CR(T
rR) is the coercive force of the recording layer at the temperature T
rR) when the recording and bias layers are cooled from the temperature T
2 to the temperature T,
R.
[0028] The magnetization-reversing temperature is defined as a temperature at which a coercive
force H
CR of the recording layer 2 is smaller than the magnitude of the leakage magnetic field
to form an reversed magnetic domain.
[0029] Magnetization-reversal preferably does not occur in the bias layer 4. In order to
prevent mag- netizationreversal, the bias layer 4 must always satisfy inequality H
CB > HE where H
CB is the coercive force of the bias layer 4 and HE is a component of perpendicular
to the surface of the sum of vectors of the leakage magnetic field leaking from the
bias layer 4 and the leakage magnetic field leaking from the recording layer 2 to
the bias layer 4. If magnetization-reversal occurs in the bias layer 4, inequality
T
rB > T
1 > T
2 ≧ T
rR must be satisfied where T
rB is the magnetization-reversing temperature.
[0030] The bias layer 4 may or may not have a compensation temperature but preferably has
a compensation temperature T
compB which satisfies T
rR > T
compB so as to cause the bias layer 4 to apply a sufficiently high leakage magnetic field
to the recording layer 2.
[0031] The recording layer 2 may or may not have a compensation temperature, either. However,
when the recording layer 2 has a Curie temperature about T
rR, it is preferable not to cause a compensation temperature T
comp
R to fall between room temperature and the Curie temperature. When the compensation
temperature T
comp
R falls between room temperature and the Curie temperature, it is preferable that T
rR > T
comp
R is satisfied.
[0032] In order to enlarge the change between
HB1 and H
B2 both of which are the leakage magnetic fields from the bias layer 4, and between
H
s and H
B2 both of which are the leakage magnetic fields from the recording layer, a full width
at half maxima (to be referred to as FWHM hereinafter) T
HW1 of a temperature distribution measured at a beam irradiated portion upon a decrease
from the temperature T, to the temperature T
rR, and a FWHM T
HW2 of a temperature distribution measured at the beam irradiated portion upon a decrease
from the temperature T
2 to the temperature TrR preferably satisfy condition T
HW1,T
HW2 > 2.
[0033] An external magnetic field H
e1 which satisfies conditions H
CR(T
rR) ≦ H
S1 + H
e1 - H
B1 and H
CR(T
rR) ≦ H
B2 - (Hs
2 + H
e1) may be applied in the directions of the leakage magnetic fields H
S1 and H
S2 from the recording layer 2 in order to compensate for them, if necessary. An external
magnetic field He2 which satisfies conditions H
CR(T
rR) ≦ H
S1 - (H
B1 + He2) and H
CR(T
rR) ≦ H
B2 + He2 - H
S2 may be applied to the directions of leakage magnetic fields H
B1 and H
B2 from the bias layer 4 in order to compensate for them. The external magnetic field
may be constantly applied to the medium during laser beam radiation. Alternatively,
the external magnetic field may be applied to the medium when the medium temperature
reaches the magnetization-reversing temperature T
rR of the recording layer 2.
[0034] When a value of H
B1 - H
B2 is not sufficiently large, it is preferable to change a C/N ratio in a reproduced
signal from zero to a saturation level with a small change in magnetic field in the
recording layer 2. For this purpose, a Gd-Dy-Fe alloy is effective (11th Meeting of
the Institute of Japanese Applied Magnetics, Lecture Papers 1987. 11), P. 276). In
general, condition H
B1 - H
B2 ≦ 200 Oe can be easily achieved. Therefore, it is preferable that a material capable
of achieving a saturated C/N ratio with a change in magnetic field of 150 Oe or less
is used in the recording layer 2.
[0035] When the recording layer 2 made of an alloy represented by formula (GdxDy
1-x)
yFe
1-y (wherein x and y are represented in at% and satisfy conditions 0 < x < 100 and 13
< y < 35), a C/N ratio in a reproduced signal can reach a saturation level with small
magnetic field to satisfy the above condition. When the recording layer 2 made of
such a material, recording/erasure of information utilizing the leakage magnetic fields
disclosed in the present invention can be facilitated.
[0036] The principle of recording/erasure of information according to the present invention
will be described by the use of a magneto-optical information storage medium which
has a recording medium 2 and a bias layer 4 whose temperature-magnetic characteristic
curves are shown in Figs. 3A and 3B.
[0037] Fig. 3A shows the relationship between the temperatures and the coercive forces of
the recording and bias layers 2 and 4, and Fig. 3B shows the relationship between
the temperatures and saturated magnetization of the recording layer 2 and the bias
layer 4. Referring to Figs. 3A and 3B, reference symbol T
a denotes a holding temperature; T
compB, a compensation temperature (i.e., a temperature at which the direction of magnetization
is reversed) of the bias layer; T
c, a Curie temperature of the recording layer; and Ti, a temperature of an irradiated
portion when the medium is irradiated with the laser beam having the first power level
(recording level). The temperature T
2 of the medium portion irradiated with the second power level (erasure level) and
the magnetization-reversing temperature T
rR of the recording layer 2 are almost equal to the temperature TC.
[0038] The bias layer 4 always satisfies condition lH
s + H
El< H
CB where Hs is the leakage magnetic field vector (self leakage magnetic field vector)
from the bias layer 4 to itself, HE is the leakage magnetic field vector applied from
the recording layer 2 to the bias layer 4, and H
CB is the coercive force of the bias layer 4. In this case, the magnetization-reversal
does not occur in the bias layer 4. Even if the external magnetic field H
e is applied, condition lH
S + H
E + H
e| < H
CB should be satisfied, and no magnetic inversion occurs in the bias layer 4.
[0039] An operation for recording information will be described below.
[0040] Figs. 4A to 4E are views showing directions of magnetization of the recording and
bias layers having the above temperature-magnetic characteristic curves during recording
in units of temperatures. In Figs. 4A to 4E, only the recording layer and the bias
layers are described which are extracted from the magneto-optical information storage
medium and are illustrated. In Figs. 4A to 4E, a portion having an inverted magnetic
domain is represented by a vertical line.
[0041] Fig. 4A shows an initial state corresponding to a non-recorded state. The direction
of magnetization of the recording layer 2 is set opposite direction to that of the
bias layer 4.
[0042] When the medium is irradiated with a laser beam having the first level, the temperature
of the irradiated portion is increased to the temperature Ti, so that a state shown
in Fig. 4B is obtained. That is, a state in which magnetization of the beam-irradiated
portion of the recording layer 2 disappears is obtained.
[0043] Upon laser beam radiation, when the medium is cooled to the temperature T
rR (=T
c), the state of magnetization is as shown in Fig. 4C. In this case. the magnetization
distribution of the beam irradiated portions of the recording and bias layers 2 and
4 is given as shown in Fig. 5. The magnetization distribution of the bias layer 4
is broad due to thermal diffusion. Therefore, the leakage magnetic field applied from
the bias layer 4 to the recording layer 2 is not large enough to interfere magnetization-reversal
of the recording layer which is caused by the self-leakage magnetic field leaking
from the recording layer 2 and applied thereto. Therefore, magnetization-reversal
of the recording layer 2 occurs by the self-leakage magnetic field of the recording
layer 2, thereby forming a reversed magnetic domain, as shown in Fig. 4D.
[0044] The medium is cooled to room temperature while this magnetization state is maintained,
thereby obtaining a recorded state shown in Fig. 4E.
[0045] An operation for erasing the recorded information will be described below.
[0046] Figs. 6A to 6D are views showing directions of magnetization of the recording and
bias layers during erasure.
[0047] When the medium in the recorded state shown in Fig. 6A is irradiated with a laser
beam having the second power level (erasure level), the temperature of the irradiated
portion is increased to the temperature T
2. The temperature T
2 is almost equal to the magnetization reversing temperature T
rR of the recording layer and is higher than the compensation temperature T
compB of the bias layer 4. Therefore, when the temperature of the irradiated portion reaches
the temperature T
2, the magnetization of the recording layer 2 disappears, as shown in Fig. 6B. In this
case, the magnetization distribution of the beam-irradiated portions of the recording
and bias layers 2 and 4 is sharper than the case of the recording process (Fig. 5),
as shown in Fig. 7. The magnitude of the leakage magnetic field applied from the bias
layer 4 to the recording layer 2 is large enough to cause magnetization-re-reversal
of the beam-irradiated portion of the recording layer 2. Therefore, as shown in Fig.
6C, magnetization of the recording layer 2 is re-reversed, and the reversed magnetic
domain disappears.
[0048] After cooling the medium to room temperature, an erased state shown in Fig. 6D is
obtained.
[0049] When a portion without a reversed magnetic domain is irradiated with a laser beam
having the second power level (erasure level), the reversed magnetic domain is not
formed in the beam-irradiated portion, as shown in Figs. 8A to 8C, due to the following
reason.
[0050] When the medium in the initial state shown in Fig. 8A is irradiated with an erasing
laser beam, a magnetization state is shown in Fig. 8B. The magnetic distribution of
the beam-irradiated portions of the recording and bias layers 2 and 4 is given as
shown in Fig. 9. The magnetization distribution of the irradiated portion of the bias
layer 4 has a sharp profile as in Fig. 7. The magnitude of the leakage magnetic field
applied from the bias layer 4 to the recording layer 2 is large. For this reason,
a condition for forming a reversed magnetic domain in the recording layer 2 is not
satisfied. Therefore, when the medium is cooled to room temperature, the reversed
magnetic domain is not formed in the recording layer and the erased state is maintained,
as shown in Fig. 8C.
[0051] In this manner, even if the nonrecorded portion is irradiated with the laser beam
having the second power level, the reversed magnetic domain is not formed. Therefore,
by combining the recording and erasing operations described above, direct overwrite
can be performed. That is, when the medium is irradiated with a laser beam obtained
by superposing the first level modulated by a recording signal on the second level,
new information can be recorded while any previous information is being erased.
[0052] Once the erased state is obtained, the above process is repeated even if the medium
is repeatedly heated to the temperature T
2. It is not needed to read, prior to the information erasing operation, whether or
not erasing power is added after once reading information recorded, as in the case
of the flip-flop recording medium disclosed in Published Unexamined Japanese Patent
Application No. Sho 62-80846.
[0053] In the above recording
/erasing and overwrite operations, the temperature of the bias layer during the magnetization-reversal
is equal to that during magnetization-re-reversal, and the directions of the magnetization-reversal
is the same as that of the magnetization-re-reversal. Therefore, the contents of the
present invention are different from the recording method and the recording medium
disclosed in Published Unexamined Japanese Patent Application No. Sho 62-154347.
[0054] The principle of recording/erasing information according this embodiment has been
described. Regardless of the recorded contents, the "recorded state" can be obtained
with the laser beam having a high level, and the "erased state" can be obtained with
the laser beam having a low level. That is, upon radiation of a laser beam power-modulated
between the high and low levels in accordance with an information signal to be recorded,
high-speed overwrite operation can be achieved. For this reason, a laser beam required
to detect a recorded magnetic domain in the conventional high-speed overwrite operation
of the medium having a bias layer need not be used. The high-speed overwrite operation
can be performed with a simple arrangement of a one-head one-beam scheme, and an erasure
margin is also sufficiently assured.
[0055] The external magnetic field He applied during recording may have the same magnitude
as that applied during erasure, and the intensity of the magnetic field can be as
small as about several hundreds of Oe. Therefore, the apparatus can be made compact,
and a servo electromagnetic drive system in an optical head is not adversely affected.
[0056] The magneto-optical information storage medium of the present invention. has advantages
over the conventional overwrite medium: (1) the exchange coupling interaction which
is hard to control is not utilized; (2) design of the medium is easy since a specific
temperature relationship between the recording and bias layers need not be established,
and the medium can be easily manufactured; (3) materials and compositions by which
the bias and recording layer are formed can be selected from a wider group since there
are small limitations as to the compensation and Curie temperatures.
[0057] Reproduction of information can be achieved by irradiating laser beam onto the medium
and using the magneto-optical effects such as Kerr effect, as seen in the case of
the conventional magneto-optical information storage medium. The power of reproducing
laser may be so large as to allow temperature at the beam-irradiated part of the medium
to rise to a value lower than T
2.
Examples
[0058] Examples of the present invention will be described below.
Example 1
[0059] A 100-nm thick Si-N underlaying layer, a 25- nm thick Tb
3o.s(Feo.ssCoo.ss)ss.a recording layer, a 20-nm thick Si-N intermediate layer, a 200-nm
thick (Gd
0.25Tb
0.75)
22.7Co
77.3 bias layer, and a 100-nm thick Si-N protective layer were formed on a 1.2- mm thick
quartz substrate by way of RF sputtering in the order named to prepare a magneto-optical
information storage medium having a structure shown in Fig. 2.
[0060] The recording layer had a Curie temperature of 163 C, a coercive force of 6 kOe at
room temperature, and magnetization of 160 emu/cc at room temperature. The bias layer
had a compensation temperature of 140 C, a coercive force of 3.5 kOe at room temperature,
and magnetization of 200 emu/cc at room temperature.
[0061] The medium was irradiated with a semiconductor laser having a wavelength of 830 nm
to perform a recording/erasure test at a linear speed of 14 mm/sec. In this case,
recording was performed using a beam pulse having a power of 5 mW and a pulse width
of 100 nsec. Upon continuous radiation of a laser beam having a power of 3.5 mW on
a recorded portion, a recorded signal could be erased.
Example 2
[0062] A 140-nm thick Si-N underlaying layer, a 25- nm thick Tb
28(Fe
0.85Co
0.15)
72 recording layer, a 20- nm thick Si-N intermediate layer, a 150-nm thick (Gd
0.25Tb
0.75)
22.7Co
77.3 bias layer, and a 100-nm thick Si-N protective layer were formed on a tracking-grooved
glass substrate having a diameter of 5.25 inch by way of RF sputtering in the order
named to prepare a magneto-optical information storage medium having a structure shown
in Fig. 2.
[0063] The recording layer had a Curie temperature of 180°C, a compensation temperature
of 110°C, a coercive force of 7.3 kOe at room temperature, and magnetization of 170
emu/cc at room temperature. The bias layer had a compensation temperature of 130°C.
a coercive force of 4.0 kOe at room temperature, and magnetization of 180 emu/cc at
room temperature.
[0064] An overwrite test using one-beam power modulation was performed at a linear speed
of 10 m/sec, a recording power of 8 mW, an erase power of 4.5 mW, and a pulse width
of 100 nsec while an external magnetic field of 200 Oe was kept applied in a direction
of a leakage magnetic field applied from the bias layer to the recording layer. In
this test, a 2-MHz new recording signal was recorded in the medium in which a 1-MHz
recording signal was recorded. As a result, the previous 1-MHz information was erased,
and only the new 2-MHz information was recorded. That is, the one-beam overwrite operation
could be confirmed.
Example 3
[0065] A 100-nm thick Si-N underlaying layer, a 25- nm thick Tb
28(Fe
0.85Co
0.15)
72 recording layer, a 50- nm thick Si-N intermediate layer, a 150-nm thick (Gd
0.25Tb
0.75)
18.4Co
81.6 bias layer, and a 100-nm thick Si-N protective layer were formed on a tracking-grooved
glass substrate having a diameter of 5.25 inch by RF. sputtering in the order named
to prepare a magneto-optical information storage medium having a structure shown in
Fig. 2.
[0066] The recording layer had a Curie temperature of 180° C. a compensation temperature
of 110° C, a coercive force of 7.3 kOe at room temperature, and magnetization of 170
emu
/cc at room temperature. The bias layer had a coercive force of 2.4 kOe at room temperature,
and magnetization of 180 emu/cc at room temperature. In this case, no compensation
temperature was present between room temperature and 400° C.
[0067] An overwrite test using one-beam power modulation was performed at a linear speed
of 10 m/sec, a recording power of 10 mW, an erase power of 6.5 mW, and a pulse width
of 100 nsec while an external magnetic field of 400 Oe was kept applied in a direction
of a leakage magnetic field applied from the bias layer to the recording layer. In
this test, a 2-MHz new recording signal was recorded in the medium in which a 1-MHz
recording signal was recorded. As a result, the previous 1-MHz information was erased,
and only the new 2-MHz information was recorded. That is, the one-beam overwrite operation
could be confirmed.
Example 4
[0068] A temperature distribution of a beam-irradiated portion was obtained by arithmetic
operations, when a magneto-optical information storage medium having a 1.2-mm thick
quartz substrate, a 100-nm thick Si-N underlaying layer, a 25-nm thick Tb
28(Feo.85Coo.15)72 recording layer, a 20-nm thick Si-N intermediate layer, a 200-nm
thick Tb
22Co
7s bias layer, and a 100-nm thick Si-N protective layer was irradiated with a laser
beam pulse having a spot diameter of 1.35 u.m, a power 8 mW, and pulse width of 50
nsec. The temperature at the center of the region was calculated to be 216° C immediately
after the region has been irradiated by the laser beam. Also, the radius a of that
part of the region, whose periphery was heated to 216°C x e-
2, was board, by calculation, to be 580 nm.
[0069] When 30 seconds elapsed after radiation of a laser beam pulse having the above spot
diameter, a power of 14.6 mW and a pulse width of 50 nsec, the central temperature
was calculated to be 216° C but the radius a was calculated as 750 nm, thus confirming
a broad temperature distribution.
[0070] In the above calculation, the intensitizes which the leakage magnetic .fields He
applied from the bias layers had at the centers of the beam spots and at the center
along the thickness of the recording layer were obtained by arithmetic calculations
to be 543 Oe and 454 Oe respectively, thus causing a difference of 89 Oe. It was thus
confirmed that recording/erasure of information could be performed on the basis of
the principle of the present invention.
Example 5
[0071] Leakage magnetic field H
B differences for the temperature distributions of the two irradiated portions obtained
the same procedures as in Example 4 by using a magneto-optical information storage
medium as in Example 4 were calculated at positions which were away from the bias
layer to the recording layer by distances of 12.5 nm, 62.5 nm, and 112.5 nm and all
of which corresponded to the beam spot center. These distances corresponded to thicknesses
of 0 nm, 50 nm, and 100 nm of the intermediate layer when the thickness of the recording
layer was set to be 25 nm. The H
B differences were obtained, by calculation, to be 100 Oe, 69 Oe, and 52 Oe.
Example 6
[0072] He differences at the beam spot centers and at the center along the thickness of
the recording layer were calculated for the temperature distributions of two irradiated
portions obtained the same procedures as in Example 4 changing the thickness of the
bias layer. When the thicknesses of the bias layer were set to be 50 nm, 100 nm, and
400 nm, the H
B differences were 32 Oe, 52 Oe, and 106 Oe, respectively.
Example 7
[0073] A 100-nm thick Si-N underlaying layer, a 25- nm thick (Gd
0.5Tb
0.5)
15Fe
85 recording layer, a 10- nm thick Si-N intermediate layer, a 400-nm thick Tb
22Co
78 bias layer, and a 100-nm thick Si-N protective layer were formed on a tracking-grooved
glass substrate having a diameter of 5.25 inch by way of RF sputtering in the order
named to prepare a magneto-optical recording medium having a structure shown in Fig.
2. The C/N ratio of the recording layer was changed from 0 dB to 48 dB with a magnetic
field of ±50 Oe. According to arithmetic calculation, it was confirmed that the H
B difference of 110 Oe was generated in the bias layer at the center of the laser beam
spot.
[0074] An overwrite test using one-beam power modulation was performed at a linear speed
of 10 m/sec, a recording power of 9 mW, and an erase power of 4.5 mW while an external
magnetic field of 700 Oe was applied in a direction of a leakage magnetic field applied
from the recording layer. In this test, a 2-MHz new recording signal was recorded
in the medium in which a 1-MHz recording signal was recorded. As a result, the previous
1-MHz information was erased, and only the new 2-MHz information was recorded. That
is, the one-beam overwrite operation could be confirmed.
1. A method of magneto-optically recording/erasing information which comprises irradiating
pulse-like laser beam onto a magneto-optical information storage medium, the power
of said laser beam being modulated into a first level and a second level lower than
the first level, said magneto-optical information storage medium including recording
and bias layers (2, 4) which are stacked one upon the other to apply coupling interaction
which is mainly magnetostatic interaction to each other said medium satisfying condition
T, > T2 > T,R, where T,R is a magnetic inversion temperature of the recording layer, T1 is a temperature of a region irradiated with the laser beam pulse having the first
power level, and T2 is a temperature of a region irradiated with the laser beam pulse having the second
power level, and said medium satisfying condition HCR(TrR) ≦ HS1 - HB1 - (where HB1 is a leakage magnetic field leaking from the bias layer and applied to the recording
layer (2) and HS1 is a self-leakage magnetic field leaking from the recording layer (2), both HB1 and HS1 being values obtained when the medium is cooled from the temperature T1 to the temperature TrR, and HCR(TrR) is a coercive force of the recording layer (2) at the temperature TrR) when the recording and bias layers (2, 4) are cooled from the temperature T1 to the temperature T,R, and condition HCR(TrR) ≦ HB2 - Hs2 (where HB2 is a leakage magnetic field leaking from the bias layer (2) and applied to the recording
layer (2) and Hs2 is a self- leakage magnetic field leaking from the recording layer (2), both HB2 and Hs2 being values when the medium is cooled from the temperature T2 to the temperature TrR, and HCR(TrR) is a coercive force of the recording layer (2) at the temperature T,R) when the recording and bias layers (2, 4) are cooled from the temperature T2 to the temperature TrR;
wherein when the medium is irradiated with the laser beam pulse having the first power
level and the irradiated region is cooled from the temperature T1 to TrR, the magnetization of the beam-irradiated region of the recording layer (2) is directed
to a direction of the leakage magnetic field leaking from the recording layer (2),
and when the medium is irradiated with the laser beam pulse having the second power
level and the irradiated region is cooled from the temperature T2 to the temperature TrR the magnetization of the beam-irradiated region of the recording layer is directed
a direction of the leakage magnetic field applied from the bias layer (4) to the recording
layer (2).
2. A method according to claim 1, characterized in that the bias layer (4) has a magnetization
reversing temperature TrB and satisfies condition TrB > T1 > T2 ≧ TrR.
3. A method according to claim 1, characterized by further comprising the step of
applying an external magnetic field He in directions of the magnetic fields H
S1 and H
S2 so as to satisfy conditions
HCR(TrR) ≦ HS1 + He) -HB1 and HB1 and HCR(TrR) ≦
HB2 - (HS2 + He).
4. A method according to claim 1, characterized by further comprising the step of
applying an external magnetic field He in directions of the magnetic fields H
B1 and H
B2 so as to satisfy conditions
HCR(TrR) ≦ HS1 - (HB1 + He) and HCR(TrR) ≦ HB2 + He - Hs2.
5. A method according to claim 1, characterized in that the medium satisfies condition
TcompB < Tc where the TcompB is a compensation temperature of the bias layer (4) and Tc is a Curie temperature of the recording layer (2).
6. A method according to claim 5, characterized in that the medium satisfies condition
TrR > TcompB.
7. A method according to claim 1, characterized in that the recording layer (2) has
a Curie temperature near TrR and does not have a compensation temperature falling between room temperature and
the Curie temperature.
8. A method according to claim 1, characterized in that the recording layer (2) has
a compensation temperature TcompR and satisfies condition TrR > TcompR.
9. A method according to claim 1, characterized in that a full width at half maxima
THw1 of a temperature distribution measured at a beam-irradiated portion, upon a decrease
from the temperature T1 to the temperature TrR, and a full width at half maxima THw2 of a temperature distribution measured at the beam-irradiated portion upon a decrease
from the temperature T2 to the temperature TrR satisfy condition THW1/THW2 > 2..
10. A magneto-optical recording medium comprising: a recording layer (2) for recording
information; and a bias layer (4) for applying a bias magnetic field to the recording
layer, said recording and bias layers (2, 4) having perpendicular magnetic anisotropy
and being stacked one upon the other to apply coupling interaction which is mainly
magnetostatic interaction to each other said medium being irradiated with modulated
laser beam pulses having a first level and a second level lower than the first level
so as to record/erase the information,
characterized in that the medium satisfies condition T1 > T2 > TrR where TrR is a magnetization reversing temperature of the recording layer (2), T, is a temperature
of a region irradiated with the laser beam having the first level, and T2 is a temperature of a region irradiated with the laser beam having the second power
level, and satisfies condition HCR(TrR) ≦ HS1 -HB1 (where HB1 is a leakage magnetic field leaking from the bias layer (4) and applied to the recording
layer (2) and HS1 is a self- leakage magnetic field leaking from the recording layer (2), both HB1 and HS1 being values obtained when the medium is cooled from the temperature T, to the temperature
TrR, and HCR(TrR) is a coercive force of the recording layer at the temperature TrR) when the recording and bias layers (2, 4) are cooled from the temperature T, to
the temperature TrR and condition HCR(TrR) ≦ HB2 - HS2 (where HB2 is a leakage magnetic field leaking from the bias layer (4) and applied to the recording
layer (2) and Hs2 is a self-leakage magnetic field leaking from the recording layer, both HB2 and HS2 being values obtained when the medium is cooled from the temperature T2 to the temperature TrR, and HCR-(TrR) is a coercive force of the recording layer (2) at the temperature TrR) when the recording and bias layers (2, 4) are cooled from the temperature T2 to the temperature TrR.
11. A medium according to claim 10, characterized in that the medium satisfies condition
TcompB < Tc where TcompB is a compensation temperature of the bias layer (4) and Tc is a Curie temperature of the recording layer (2).
12. A medium according to claim 11, characterized in that the medium satisfies condition
TrR > TcompB.
13. A medium according to claim 10, characterized in that the recording layer (2)
has a Curie temperature near TrR and does not have a compensation temperature falling between room temperature and
the Curie temperature.
14. A medium according to claim 10, characterized in that the recording layer (2)
has a compensation temperature TcompR and satisfies condition TrR > TcompR.
15. A medium according to claim 10, characterized in that the recording and bias layers
(2, 4) contain an amorphous rare earth-transition metal alloy.
16. A medium according to claim 10, characterized by further comprising an intermediate
layers made of a dielectric material and sandwiched between the recording and bias
layers (2, 4).
17. A magneto-optical information storage medium comprising:
a recording layer (2) for recording information; and a bias layer (4) for applying
a bias magnetic field to the recording layer,
said recording and bias layers (2, 4) having perpendicular magnetic anisotropy and
being stacked one upon the other to apply coupling interaction which is mainly magnetostatic
interaction to each other,
said recording layer containing an alloy represented by formula (GdxDy1-x)Fe1-y (wherein x and are represented in at% and respectively satisfy conditions 0 < x <
100 and 13 < y < 35).