Divided electrode type semiconductor laser device

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EP 0 370 831 A3

(12)	EUROPEAN PATENT APPLICATION

(88)	Date of publication A3:
	02.05.1991 Bulletin 1991/18

(43)	Date of publication A2:
	30.05.1990 Bulletin 1990/22

(21)	Application number: 89312237.4

(22)	Date of filing: 24.11.1989

(51)	International Patent Classification (IPC)⁵: H01S 3/025, H01S 3/085

(84)	Designated Contracting States:
	DE FR GB NL

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Priority:

25.11.1988 JP 299355/88

(71)	Applicants:
	Director-General of the Agency of Industrial Science and Technology Chiyoda-ku Tokyo 100 (JP) Mitsubishi Chemical Corporation Chiyoda-ku Tokyo (JP)

(72)	Inventors:
	Suzuki, Yoshihiro Agency of Ind.Science and Techn. Tsukuba-shi Ibaraki 305 (JP) Yajima, Hiroyoshi Agency of Ind.Science and Techn. Tsukuba-shi Ibaraki 305 (JP) Shimada, Junichi Agency of Ind.Science and Techn. Tsukuba-shi Ibaraki 305 (JP) Shimoyama, Kenji Mitsubishi Kasei Corporation Ushiki-shi Ibaraki 300-12 (JP) Gotoh, Hideki Mitsubishi Kasei Corporation Ushiki-shi Ibaraki 300-12 (JP)

(74)	Representative: Bubb, Antony John Allen et al
	GEE & CO. Chancery House Chancery Lane London WC2A 1QU London WC2A 1QU (GB)

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References cited: :

(54)	Divided electrode type semiconductor laser device

(57) To provide a divided electrode type semiconductor layer device designed to improve the separation of electrodes without reducing the amount of doping for carrier injection layers, a double-hetero-structure is formed on a semi-insulating substrate, and at least two pairs of carrier injection clad layers (109a, 109b; 111a, 111b) are thereafter buried like islands while a high-resistance portion (105) is left between the carrier injection clad layers to electrically separate these layers. Electrodes (113a,113b; 115a,115b) are respectively formed on the separated carrier injection layers (109a,109b; 111a,111b)

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