(19)
(11) EP 0 383 193 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
20.01.1993 Bulletin 1993/03

(43) Date of publication A2:
22.08.1990 Bulletin 1990/34

(21) Application number: 90102466.1

(22) Date of filing: 08.02.1990
(51) International Patent Classification (IPC)5: H01P 3/08, H01L 29/48, H01L 23/52
(84) Designated Contracting States:
DE FR GB NL SE

(30) Priority: 17.02.1989 JP 36245/89

(71) Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Osaka-shi, Osaka 541 (JP)

(72) Inventor:
  • Shiga, Nobuo, c/o Yokohama Works
    Sakae-ku, Yokohama-shi, Kanagawa (JP)

(74) Representative: Kahler, Kurt, Dipl.-Ing. 
Patentanwälte Kahler, Käck, Fiener & Sturm P.O. Box 12 49
87712 Mindelheim
87712 Mindelheim (DE)


(56) References cited: : 
   
       


    (54) Microwave integrated circuit


    (57) In this invention, a distributed constant line (12) of a microwave IC is formed of a Schottky metal, and a semiconductor conductive layer (15,16) contacting the distributed constant line (12) at least at one position and an ohmic contact electrode (13,14) contacting the semiconductor conductive layer (15,16) are arranged. According to this invention, characteristics of ICs can be optimized against a variation in elements combined with a circuit comprising the distributed constant line after the manufacture of ICs.







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