(19)
(11)
EP 0 383 821 A1
(12)
(43)
Date of publication:
29.08.1990
Bulletin 1990/35
(21)
Application number:
88909898.0
(22)
Date of filing:
18.10.1988
(51)
International Patent Classification (IPC):
H01L
21/
28
( . )
H01L
29/
43
( . )
H01L
21/
285
( . )
(86)
International application number:
PCT/US1988/003663
(87)
International publication number:
WO 1989/004057
(
05.05.1989
Gazette 1989/10)
(84)
Designated Contracting States:
DE GB IT NL SE
(30)
Priority:
20.10.1987
US 19870110332
(71)
Applicant:
BELL COMMUNICATIONS RESEARCH, INC.
Livingston, New Jersey 07039-2729 (US)
(72)
Inventor:
SANDS, Timothy, David
Lincroft, NJ 07738 (US)
(74)
Representative:
Dubois-Chabert, Guy, et al
Société de Protection des Inventions 25, rue de Ponthieu
F-75008 Paris
F-75008 Paris (FR)
(54)
EPITAXIAL INTERMETALLIC CONTACT FOR COMPOUND SEMICONDUCTORS