MOSFET IN SILICON CARBIDE - Patent 0386085

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EP 0 386 085 A1

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(43)	Date of publication:
	12.09.1990 Bulletin 1990/37

(21)	Application number: 88909938.0

(22)	Date of filing: 26.10.1988

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International Patent Classification (IPC):

H01L 29/ 78^{( . )}

H01L 29/ 24^{( . )}

(86)	International application number:
	PCT/US1988/003793

(87)	International publication number:
	WO 1989/004056 (05.05.1989 Gazette 1989/10)

(84)	Designated Contracting States:
	DE FR GB IT NL SE

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Priority:

26.10.1987 US 19870113564

(71)	Applicant: NORTH CAROLINA STATE UNIVERSITY
	Raleigh, North Carolina 27695-7003 (US)

(72)	Inventors:
	PALMOUR, John, W. Raleigh, NC 27607 (US) KONG, Hua-Shuang Raleigh, NC 27607 (US) DAVIS, Robert, F. Raleigh, NC 27607-3501 (US)

(74)	Representative: Warren, Keith Stanley, et al
	BARON & WARREN 18 South End Kensington London W8 5BU London W8 5BU (GB)

(54)	MOSFET IN SILICON CARBIDE