ULTRATHIN SUBMICRON MOSFET WITH INTRINSIC CHANNEL - Patent 0401356

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EP 0 401 356 A1

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(43)	Date of publication:
	12.12.1990 Bulletin 1990/50

(21)	Application number: 90901245.0

(22)	Date of filing: 27.11.1989

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International Patent Classification (IPC):

H01L 27/ 12^{( . )}
H01L 29/ 786^{( . )}

H01L 29/ 78^{( . )}

(86)	International application number:
	PCT/US1989/005327

(87)	International publication number:
	WO 1990/006595 (14.06.1990 Gazette 1990/14)

(84)	Designated Contracting States:
	DE FR GB

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Priority:

09.12.1988 US 19880282150

(71)	Applicant: HUGHES AIRCRAFT COMPANY
	Los Angeles, CA 90080-0028 (US)

(72)	Inventors:
	TERRILL, Kyle, W. Santa Monica, CA 90404 (US) VASUDEV, Prahalad, K. Thousand Oaks, CA 91360 (US)

(74)	Representative: Colgan, Stephen James, et al
	CARPMAELS & RANSFORD 43 Bloomsbury Square London WC1A 2RA London WC1A 2RA (GB)

(54)	ULTRATHIN SUBMICRON MOSFET WITH INTRINSIC CHANNEL