(19)
(11) EP 0 406 886 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
27.03.1991 Bulletin 1991/13

(43) Date of publication A2:
09.01.1991 Bulletin 1991/02

(21) Application number: 90112938.7

(22) Date of filing: 06.07.1990
(51) International Patent Classification (IPC)5: H01J 21/10, H01J 19/24, H01J 3/02, H01J 9/02
(84) Designated Contracting States:
DE FR GB

(30) Priority: 07.07.1989 JP 175900/89

(71) Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Kadoma-shi, Osaka-fu, 571 (JP)

(72) Inventors:
  • Watanabe, Masanori
    Katano-shi, Osaka-fu (JP)
  • Kado, Hiroyuki
    Kadoma-shi, Osaka-fu (JP)
  • Chikamura, Takao
    Osaka-shi, Osaka-fu (JP)
  • Yoshiike, Nobuyuki
    Ikoma-shi, Nara-ken (JP)

(74) Representative: Eisenführ, Speiser & Partner 
Martinistrasse 24
28195 Bremen
28195 Bremen (DE)


(56) References cited: : 
   
       


    (54) Field-emission type switching device and method of manufacturing it


    (57) A field-emission type switching device includes a substrate (1, 2; 11) formed with a recess (6; 15) having a straight edge and serrated edge opposite to the straight edge. A gate electrode (5; 14) is formed at the bottom of the recess (6; 15). An emitter electrode (3, 12) is provided over the substrate (1, 2; 11) and formed with a serrated edge which is slightly off alignment with the serrate edge of the recess (6; 15) so as to provide an emitter overhanging portion (3a) overhanging the recess (6;15). Similarly, a collector electrode (4, 13) is provided over the substrate means (1, 2; 11) and formed with a straight edge which is slightly off alignment with the straight edge of the recess (6; 15) so as to provide a collector overhanging portion (4a) overhanging the recess (6; 15).







    Search report