GATE DIELECTRIC FOR A THIN FILM FIELD EFFECT TRANSISTOR - Patent 0408653

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EP 0 408 653 A1

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(43)	Date of publication:
	23.01.1991 Bulletin 1991/04

(21)	Application number: 89904998.0

(22)	Date of filing: 14.03.1989

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International Patent Classification (IPC):

H01L 29/ 49^{( . )}

(86)	International application number:
	PCT/US1989/000971

(87)	International publication number:
	WO 1989/009494 (05.10.1989 Gazette 1989/24)

(84)	Designated Contracting States:
	AT BE CH DE FR GB IT LI LU NL SE

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Priority:

31.03.1988 US 19880176264

(71)	Applicant: Solarex Corporation
	Rockville Maryland 20850 (US)

(72)	Inventors:
	CATALANO, Anthony, W. Furlong, PA 18925 (US) KERNS, Ralph, C. Doylestown, PA 18940 (US)

(74)	Representative: Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
	Maximilianstrasse 58 D-80538 München D-80538 München (DE)

(54)	GATE DIELECTRIC FOR A THIN FILM FIELD EFFECT TRANSISTOR