......DE..........................................J0410374EUROPEAN PATENT SPECIFICATIONB119960207EP90114152.3199007241990072419941121enenen191956/8919890725JP199602071996061991013019910519960207199606199504076 6H 01L 39/24 AdeSupraleitende Mehrlagen-Schaltung und Verfahren zu deren HerstellungenSuperconductive multilayer circuit and its manufacturing methodfrCircuit multicouche supraconducteur et méthode de sa fabricationEP-A- 0 296 973EP-A- 0 358 879PATENT ABSTRACTS OF JAPAN, vol. 13, no. 62 (E-715)[3410], 13th February 1989; & JP-A-63 250 880PROCEEDINGS OF SYMPOSIUM S, EXTENDED ABSTRACTS OF HIGH TC SUPERCONDUCTORS, SPRING MEETING OF THE MATERIALS RESEARCH SOCIETY, Anaheim, Ca, 23rd-24th April 1987, pages 81-84; R. H. KOCH et al.: "Thin films and SQUIDS made from YBa2Cu30y"APPLIED PHYSICS LETTERS, vol. 55, no. 9, 28th August 1989, pages 896-890, New York, US; Q.Y. MA et al.: "Novel method of patterning YBaCuO superconducting films"JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 29, no. 6, June 1990, pages 1076- 1079, Tokyo, JP; T. HATANO et al.: "Unique method of patterning superconducting thin films by selective growth of Y-Ba-Cu-O"19910515Shiga, Shoji, c/o THE FURUKAWA ELECT. CO., LTD.6-1, 2-chome, MarunouchiChiyoda-ku, TokyoJPHarada, Nakahiro, c/o THE FURUKAWA ELECT. CO., LTD6-1, 2-chome, MarunouchiChiyoda-ku, TokyoJPYamamoto, Kiyoshi c/o THE FURUKAWA ELECT. CO., LTD6-1, 2-chome, MarunouchiChiyoda-ku, TokyoJPSato, Koki, c/o THE FURUKAWA ELECTRIC CO., LTD.6-1, 2-chome, MarunouchiChiyoda-ku, TokyoJPTHE FURUKAWA ELECTRIC CO., LTD.00218850FURUKAWA ELECTRIC CO., LTD., THE6-1, 2-chome, Marunouchi Chiyoda-kuTokyoJPLehn, Werner, Dipl.-Ing.et al00007471Hoffmann, Eitle & Partner, Patentanwälte, Postfach 81 04 20D-81904 MünchenDEDE19910703199127

The present invention relates to a superconductive multilayer circuit according to the preamble of claim 1 and its manufacturing method.

Conventionally, multilayer circuits, which are used in electronic equipments, are formed by use of normal conductive materials or semiconductor materials. In the process of manufacturing the multilayer circuits, the formation of a conductive film, coating of a resist, exposure, and etching are performed. However according to this method, since a non-circuit part is removed by etching, a circuit part is formed to be projected. In a case where the multilayer circuits are formed by this method, the circuit part is formed and an insulating material is embedded in the removed non-circuit part, so that the surface of the circuit is caused to flat, thereby forming a first circuit layer. Thereafter, a second circuit layer is formed on the first circuit layer in the same manner as the above. therefore, if the multilayer circuits are formed by the conventional method, the productivity considerably decreases.

The superconductive material exhibits a superconductive phenomenon on cooling to a very low temperature, which is less than the critical temperature (hereinafter called Tc), and an electrical resistance becomes zero, thereby a large amount of current can be flowed. The application of the superconductive material to the electronic equipments has been widely studied. Particularly, oxide superconductive materials such as Y-Ba-Cu-O system and Bi-Sr-Ca-Cu-O system, which exhibit the superconductive phenomenon near the temperature of liquid nitrogen, has be recently found out, and the practical use of the oxide superconductive materials has been widely made. In accordance with this situation, the development of the multilayer circuits using oxide superconductive materials has been actively made.

However, regarding the above-mentioned superconductive materials, particularly oxide superconductive materials, Tc and a critical current density (hereinafter called Jc) considerably change by a slight difference in a composition or a difference in a crystal orientation. Due to this, to apply the oxide superconductive material to the multilayer circuit, the development of the manufacturing method having the above-mentioned features are required.

From the earlier application EP-A-0 358 879 a method of making high-density interconnects in a superconductive multilayer circuit is known. Particularly, a superconductive multilayer circuit according to the preamble of claim 1 is recited in this document.

This known method of making high-density interconnects comprises the steps of:

However, according to this document in the implanted high Tc superconductive material there is produced a disturbed crystal structure.

Moreover, providing said layer of electrically insulative material on said respective circuit layers consisting of superconductive electrical cicuits and ion converted insulative material, and forming via holes in said layer of electrically insulative material prevents that the surface of the second and following circuit layers is flat. During the formation of the multilayer, the crystal structure of the superconductive material, which constitutes the circuit part, is therefore disturbed. The degree of disturbance caused in the crystal structure of the superconductive material, which constitutes the circuit part, increases from the lowest layer towards the highest layer. Consequently, the degree of deterioration of the superconductor characteristical circuit part also increases from the lowermost layer towards the uppermost layer.

The EP-A-0 296 973 discloses a method for producing a superconducting circuit.

According to this document a superconducting circuit is produced by a combination of physical vapour deposition technique and doping technique. A method includes the steps comprising depositing a thin film of superconductor of compound oxide on a substrate and doping a selected portion on a surface of said film with a predetermined ion under heated condition or without any heat treatment in order to transform the crystal structure of the selected portion from superconductor to non-superconductor, so that said undoped portion which is left in condition of superconductor is used as a superconducting circuit.

From Proceedings of Symposium S., Extended Abstracts of High Tc Superconductors, Spring Meeting of the MRS, Anaheim, CA, 23rd - 24th April 1987, pages 81 - 84, Koch et al., "Thin Films And Squids Made From YBa₂Cu₃Oy" it is known that the use of ion implanting for lowering Tc in YBa₂Cu₃Oy results in a completely planar geometry for finished devices.

In the Japanese patent application Kokai Publication No. 63-250 880 it is disclosed to form an oxide superconducting material on a substrate, to selectively coat the upper surface thereof with a photoresist, and to add aluminum by an ion-implanting method to regions not formed with the photoresist. Then, when the whole is again heated and baked in an oxidative atmosphere, the photoresist is removed, an ion implanted isolation region continuously holds insulative even in later high temperature treating steps, and a superconductive region also holds a superconducting state.

It is an object of the present invention to provide a superconductive multilayer circuit of the initally defined kind and its manufacturing method, wherein higher jc values may be obtained for the second and following circuit layers.

Another objective of the present invention is to provide a method for effectively manufacturing said superconductive multilayer circuit.

This object is solved according to the characterizing part of claim 1 of the present application.

Moreover, this object is solved according to claim 4 of the present application.

Preferred embodiments are listed in dependent claims 2 and 3 and 5 to 17, respectively.

This invention can be more fully understood from the following detailed description when taken in conjunction with the accompanying drawings, in which:

In the present invention, oxide superconductive materials such as Y-Ba-Cu-O system and Bi-Sr-Ca-Cu-O system can be used as superconductive materials. Moreover, a simulant of the superconductive material is a material having the same crystal structure as the superconductive material, and lacking in a part of the constituent elements, or containing the constituent elements excessively. Or, the simulant of the superconductive material is a material having the same crystal structure as the superconductive material and containing elements other than the constituent elements. Additionally, the simulant of superconductive material is a material having low Tc as compared with the superconductive material or being non-conductive at a working temperature. For example, a simulant of the oxide superconductive material of Y-Ba-Cu-O system is a material in which specific components such as N, B, Ga, Co, Ni, Fe, Zn, Cd, Be are implanted in to the superconductive material having a composition of YBa₂Cu₃O₇ and Tc = 85 to 95K, and heated as required so that Tc is lowered below 77K.

According to the present invention, as a substrate forming the superconductive material or the simulant, there may be used metals which are non-reactive with the superconductive materials such as Cu, Ni, Fe, Co, Cr, Ag, Au, Pt, Mo, Pb, alloies of these metals such as stainless, Cu-Ni alloy, Fe-Ni alloy, Fe-Ni-Co alloy, Ni-Cr-Fe alloy, Ag-Ni alloy, Cu-Fe alloy, or ceramics such as Aℓ₂O₃, SiO₂, ZrO₂, stabilized ZrO₂, ThO₂, AℓN, Si₃N₄, SiC, TiO₂, TiN, MgO, BaZrO₃, KTaO₃, FeAℓO₄, BaTiO₃.

Particularly, if a substrate having a crystal conformity to the superconductivity material is selected, the orientation of the surface of the film formed of the superconductive material is oriented in a predetermined orientation on the substrate, thereby the formation of the film can be made.

According to the present invention, as a method for filming the substrate with the superconductive material or the simulant, a vapor phase analyzing method such as a normal sputtering method, a vacuum deposition method, and a CVD method is used.

As a method for forming a circuit in the superconductive film or the simulant formed on the substrate, a photolithography is normally used, but a method for locally irradiating a focus ion beam can be used.

The present invention will be explained with reference to the drawings based on the manufacturing method.

Figs. 1A to 1E are cross sectional views showing a substrate of the circuit of each step of one embodiment of the present invention.

First, as shown in Fig. 1A, on a substrate 10 there may be formed a superconductive film 11 having a thickness of 0.1 to 10 µm by a physical vapor deposition (PVD) or sputtering. Then, as shown in Fig.1B, a resist film 12, which serves as a mask having a specific component due to an ion beam, is formed on a predetermined part of a circuit on the superconductive film 11. In this case, a photosensitive resin having a base of poly methyl methacrylate (PMMA) may be used as a resist material. Moreover, Zn ion beam is irradiated on a non-circuit part of the first superconductive film 11, i.e., an exposed portion where no resist film 12 is formed, thereby a specific component is implanted therein and the resist film 12 is removed. Then, a heating process is performed as required, and the non-circuit part formed of the superconductive film 10 is denatured to a simulant 13 of the superconductive material (hereinafter : called simulant) having Tc lower than the superconductive material. In this manner, as shown in Fig. 1C, a first circuit layer 14 having a flat surface is formed.

Next, as shown in Fig. 1D, a second superconductive film 15 is further formed on the first circuit layer 14 in the same manner as the first superconductive film 11. Thereafter, as shown in Fig. 1E, a non-circuit part is denatured to a simulant 16 in the same manner as the first circuit layer 14, so that a second circuit layer 17 is formed. In this case, the specific component is implanted in the non-circuit part by the ion beam and the like to denature the superconductive films 11 and 15 to the simulant 13 and 16, respectively. However, it is possible to irradiate heat ray, hot air, laser beam and the like on the non-circuit parts of the superconductive films 11 and 15, and dissociate and discharge oxygen in the superconductive film. Additionally, in this case, the temperature in dissoiating and discharging oxygen is 700°C or more in the air. However, the temperature is 200 to 300°C if it is in the vacuum. The above-mentioned operations are repeated, thereby a multilayer circuit having three or more layers can be formed.

Figs. 2A to 2E are cross sectional views showing a substrate of the circuit of each step of another embodiment of the present invention.

First, as shown in Fig. 2A, a first simulant layer 21 having a thickness of 0.1 to 10 µm, in which an amount of oxygen atoms are reduced, i.e., the so called a state of oxygen deficiency, is formed on a substrate 20 by PVD or sputtering. Next, as shown in Fig. 2B, a resist film 22, which serves as a mask in which a specific component is implanted in a part other than a predetermined part of a circuit, is formed on the first simulant layer 21. Then, the ion beam of oxygen ion is irradiated on the circuit part of the first simulant film 21, i.e., the exposed portion where no resist film 22 is formed, and the oxygen ion is implanted thereon. Thereafter, the resist film 22 is removed. Thereby, as shown in Fig. 2C, the simulant film 21 of the circuit part is denatured to a superconductive material 23, and a first circuit layer 24 having a flat surface is formed.

As shown in Fig. 2D, a second simulant film 25, which comprises a material having Tc lower then the superconductive material or a non-conductive material at a working temperature, is formed on the first circuit layer 24 in the same manner as the first simulant layer 21. Thereafter, as shown in Fig. 2E, similar to the first circuit layer 24, the circuit part is denatured to a superconductive material 26, and a second circuit layer 27 is formed. These operations are repeated, thereby a multilayer circuit having three or more layers can be formed.

Moreover, a mutual transformation between an oxide superconductive material and the simulant is favorably performed by implanting or discharging atoms of oxygen since it is excellent in workability. Specifically, other than the above-mentioned ion-implantation method using ion beam and the like, there may be used a method in which the simulant or the oxide superconductive material is exposed in the oxygen stream activated by plasma of a low temperature or in the vacuum and heated at a predetermined temperature, thereby oxygen atoms are replenished or discharged.

Regarding the relationship between the content of the oxygen atoms and the Tc, in case of oxide superconductive material of YBa₂Cu₃Ox, if X are 7.0, 0.6, and 6.5, Tc are 80K or more, less than 77K and 55K or less, respectively. As mentioned above, the content of the oxygen atoms in the oxide superconductive material slightly changes, the Tc largely changes. Moreover, if an element composing the superconductive material other than oxygen is lack or excessively implanted, Tc largely changes. Therefore, it is possible to use a simulant which is obtained by lacking the element composing the superconductive material other than oxygen or excessively implanting the element.

In the present invention, a method for forming each circuit layer may be changed every layer. For example, the first circuit layer may be formed by the method shown in Figs. 1A to 1E, and the second circuit layer may be formed by the method shown in Figs. 2A to 2E. Moreover, if at least one circuit layer is formed by the method of the present invention, a conventional etching method may be used in the formation of the other circuit layers.

The oxide superconductive material has a strong crystal anisotropy and a short coherence. Due to this, in the oxide superconductive material, current easily flows in a specific crystal orientation (direction of a-b surface). However, if the crystal orientation is not fully consistent with a grain boundary, a current trouble occurs because of a weak bond. This is well-known from Report of Japan Institute of Metal, Vol. 28, No. 10, pp. 980 to 984, October 1987 and Report of Japan Institute of Applied Electromagnetics, Vol. 128, No. 5, pp. 564 to 569, May 1988..

In the method for manufacturing a multilayer circuit according to the present invention, the material, which constitutes the non-circuit part and the circuit part, holds the same or similar crystal structure and has the same crystal orientation as that of the crystal structure, thereby preventing the above-mentioned current trouble.

If the above is explained with reference to the drawing, the circuit parts 11 and 23 and the non-circuit parts 13 and 21 have the relation to the above-mentioned crystal structure, respectively. Moreover, the circuit parts 15 and 26 of the second circuit layers 17 and 27, which are formed on the first circuit layers 14 and 24 in the similar manner, and the non-circuit parts 16 and 25 are epitaxial-growing. Therefore, the circuit parts 15 and 26 of the the second circuit layer and the circuit parts 11 and 23 of the first circuit layer form a junction having no current trouble, and the crystal orientation is arranged in the direction where current easily flows.

Since the circuit parts and the non-circuit parts of the second circuit layer have the same crystal structure, it goes without saying that the third circuit layer forms the structure in which current easily flows similar to the second circuit layer.

The present invention provides a superconductive multilayer circuit, which can be obtained by forming a thin film, which comprises a superconductive material whose conductivity largely changes if the composition slightly changes and its simulant, on a substrate, implanting a specific component in a predetermined part of the thin film and discharging the component therefrom, and forming the thin film on the circuit parts or the non-circuit parts.

According to the present invention, the implantation of the specific component and the discharge thereof are performed by an ion implanting and discharging method, thereby fine processing can be performed. Moreover, by use of a material having crystal consistency with the superconductive material as the substrate, the crystal orientation of the superconductive material can be arranged in a direction where current easily flows. Furthermore, since a vapor depo- . sition method such as a sputtering method can be used as a method for forming a thin film, each layer can be formed in such a manner that the crystal orientation is arranged in the same direction. Also, unlike the conventional etching method, since a circuit having a flat surface can be obtained, a multilayer circuit can be easily manufactured.

Example 1

By a magnetron sputtering method using composite oxide of ErBa2.1 Cu3.3 Ox as a target, an epitaxial film having composition of ErBa₂Cu₃Oy and thickness of 0.5 µm was formed on a MgO substrate (100), which had been heated to 650°C, in order to arrange a surface orientation of a surface including ab axes in a conductive direction. The magnetron sputtering was performed under the atmosphere of mixed gas of Ar + 20%O₂ and on the condition that gas pressure was 80 m Torr and RF output was 100 W.

The MgO substrate having a first film of ErBa₂CU₃Oy was provided in a furnace, and oxygen gas was introduced into the furnace, and heated in the oxygen stream at 900°C for 15 minutes. Thereafter, the temperature of the furnace was cooled to 500°C at a speed of 1.5°C/min and MgO substrate was taken out of the furnace.

As a result of measuring the content of oxygen atoms and Tc were measured before and after the first film of ErBa₂Cu₃Oy was heated, the content of oxygen atoms was Y = 6.35 and Tc was 30K before heating process and the content of oxygen atoms was Y = 6.88 and Tc was 84K after heating process. In this manner, it was confirmed that Tc of the first film of ErBa₂Cu₃Oy was the temperature of liquid nitrogen (77K) or more.

Sequentially, a photoresist film was formed on a predetermined part having width of 50 µm of the circuit of the first film of ErBa₂Cu₃Oy after heating process. Then, Zn ion of 0.8 × 10¹⁶ ion/cm was implanted in the non-circuit part, and the photoresist film was removed therefrom. Thereafter, the substrate is heated at 400°C for 10 minutes and the first film of ErBa₂Cu₃Oy was annealed, and homogenized. In this manner, a first circuit layer was formed. At this time, Tc of Zn ion-implanted-part was 38K.

Sequentially, a second film of ErBa₂Cu₃Oy having thickness of 0.5 µm was formed on the first circuit layer by a vacuum deposition method. In the vacuum deposition method, Er, Ba, Cu were first put in the different crucibles, respectively and melt in the vacuum of 10⁻⁴ Torr and vapored. Then, the vapored Er, Ba, Cu are ionized by a RF excitation coil, which was arranged between the crucible and the substrate, and oxygen gas was sprayed on the substrate which was heated to 590°C.

Thereafter, similar to the first circuit layer, a second circuit layer was formed on the second film of ErBa₂Cu₃Oy by forming a circuit having width of 50 µm. At this time, two types of circuits, that is, a conductive circuit, which has conductivity with the first circuit, and an independent circuit which has no conductivity with the first circuit.

Additionally, the circuit part of the first circuit layer and the non-circuit part thereof were checked by an X-ray diffraction. As a result, the crystal structure of both parts was a rhombic system, and c axis was arranged to be perpendicular to the surface of the substrate. Also, a lattice constant of the c axis was 11.68A in the circuit part, and 11.70A in the non-circuit part.

Moreover, the circuit part of the second circuit layer was checked by the X-ray diffraction. As a result, c axis was arranged to be perpendicular to the surface of the substrate and the lattice constant of c axis was 11.68A.

Example 2

A two-layer circuit having a conductive circuit and an independent circuit was formed in the same manner as Example 1 other than that the thicknesses of first and second films of ErBa₂Cu₃Oy were 0.3 µm and that the ion implantation is not used in the second circuit layer. Instead of using the ion implantation, a Fe film having thickness of 0.015 µm was formed on the non-circuit part of the second ErBa₂Cu₃Oy, thereafter heating at 450°C.

Additionally, the circuit part of the first circuit layer and the non-circuit part thereof were checked by the X-ray diffraction. As a result, c axis was arranged to be perpendicular to the surface of the substrate. Also, a lattice constant of the c axis was 11.68A in the circuit part, and 11.73A in the non-circuit part.

Moreover, the circuit part of the second circuit layer was checked by the X-ray diffraction. As a result, c axis was arranged to be perpendicular to the surface of the substrate and the lattice constant of c axis was 11.68A in the circuit part, and 11.71A in the non-circuit part.

Example 3

A first film of YBa₂Cu₃Oy having thickness of 0.4 µm was formed on the MgO substrate (100) used in Example 1 by the vapor deposition method (degree of vacuum of 0.5 × 10⁻⁴ Torr). As a result of measuring the content of oxygen atoms of the film of ErBa₂Cu₃Oy and Tc, the content of oxygen atoms was Y = 6.4 and Tc was 54K.

Sequentially, a photoresist film was formed on the part other than a predetermined part of the circuit (50 µm of width). Then, O₂ plasma process of the electron cyclotron resonance was performed for 15 minutes as the substrate was heated at 200°C, and oxygen atoms ware incorporated into the predetermined part of the circuit, thereby a first circuit layer was formed.

Sequentially, a second film of YBa₂Cu₃Oy having thickness of 0.4 µm was formed on the first circuit layer by the vapor deposition method (degree of vacuum of 0.5 × 10⁻⁴ Torr). Thereafter, a circuit was formed in the same manner as the first circuit layer, thereby a second circuit layer was formed. In this way, a two-layer circuit layer having a conductive circuit and an independent circuit was formed.

Additionally, the circuit part of the first circuit layer and the non-circuit part thereof were checked by the X-ray diffraction. As a result, c axis was oriented to be perpendicular to the surface of the substrate. Also, a lattice constant of the c axis was 11.67A in the circuit part, and 11.73A in the non-circuit part.

Moreover, the circuit part of the second circuit layer and the non-circuit part thereof were checked by the X-ray diffraction. As a result, c axis was oriented to be perpendicular to the surface of the substrate and the lattice constant of c axis was 11.68A in the circuit part and 11.73A in the non-circuit part.

Compared Example

A first circuit layer was formed in the same manner as Example 1 other than that a Zn thin film having thickness of 0.3 µm on a non-circuit part by sputtering in place of implanting Zn ion, thereafter heating at 450°C for two hours in the air.

The obtained first circuit layer was checked by an X-ray diffraction. As a result, it was confirmed that the peak of ErBa₂Cu₃Oy was only small in the diffraction peak of the circuit part. Also, the peak of ZnO was confirmed in the diffraction peak of the non-circuit part.

Moreover, a second circuit layer was formed on the first circuit layer in the same manner that Example 1.

Regarding each two-layer circuit of the above-mentioned Examples 1 to 3 and Compared Example, Tc and Jc in the conductive circuit and the independent circuit were measured. Table 1 shows the results together with the main conditions. Additionally, Jc was measured in liquid nitrogen (77K) by a four terminal method.

As is obvious from Table 1, the superconductive multilayer circuit of the present invention exhibited high Tc and Jc.

According to Examples, Tc of the circuit parts are 83 to 85K. In contrast, Tc of the non-circuit parts are low. Specifically, the part where Zn is implanted and the part, which is oxygen deficiency, are 38K and 54K, respectively. Due to this, since these non-circuit parts become insulators at the temperature of liquid nitrogen, no trouble such as a short-circuit is not occurred. Also, Jc of the conductive circuit is lower than that of the independent circuit, but a sufficient value as a multilayer circuit. This proves that the first and second circuit layers have the same orientation of surface, and are connected to each other.

In the above Examples, the width of the circuit is 50 µm. However, by the use of the modern technique of lithography in the technical field of the manufacture of the semiconductor, it is possible to form a superconductive multilayer circuit in which the width of the circuit is µm and a fine pattern is sub µm order.

A superconductive multilayer circuit, comprising: a substrate (10;20); a first circuit layer (14;24), formed on the substrate (10;20) including a first circuit part (11;23) formed of oxide superconductive material and having a crystal structure, and a first non-circuit part (13;21) formed of a first simulant of the superconductive material; and at least one second circuit layer (17;27) formed on the first circuit layer (14;24), and including a second circuit part (15;26) formed of oxide superconductive material and having said crystal structure, and a second non-circuit part (16;25) formed of a second simulant of the superconductive material of the second circuit part; wherein said substrate (10;20) has a crystal conformity with respect to said superconductive material of the first circuit part; characterised in that said first (14;24) and second (17;27) circuit layers have the same crystal orientation and are joint with each other; each of the first (13;21) and second (16;25) non-circuit parts have a crystal structure; the crystal structure and orientation of the first circuit part (11;23) is the same as or similar to that of the first non-circuit part (13;21); the crystal structure and orientation of the second circuit part (15;26) is the same as or similar to that of the second non-circuit part (16;25); each of the first and second simulants is a non-conductive material having a temperature Tc lower than that of the superconductive materials of the first and second circuit parts; and each of the first simulant and the second simulant includes Zn or Fe. A superconductive multilayer circuit according to claim of 1, characterised in that the superconductive materials of the first and second circuit parts are ErBa₂Cu₃Oy. A superconductive multilayer circuit according to claim 1, characterised in that a c-axis of the crystal of the superconductive material of the first and second circuit parts is substantially perpendicular to a surface ofthe substrate (10;20). A method of manufacturing a superconductive multilayer circuit, comprising the steps of: forming a first thin film (11;21) made of oxide superconductive material or a simulant thereof on a substrate (10;20) having a crystal conformity with respect to the superconductive material or the simulant; forming a first circuit layer (14;24) including a first superconductor circuit (11;23) and a first non-circuit part (13;21) by denaturing part of the superconductive material or the simulant such that the crystal structure and orientation of the first superconductor circuit (11;22) is the same as or similar to that of the first non-circuit part (13;21); and forming a second thin film (15;25) made of oxide superconductive material or a simulant thereof directly on the first thin film (11;21) superconductive materials such that a crystal structure and orientation of the superconductive material or the simulant of the second film thereof conforms with a crystal structure and orientation of the superconductive material or the simulant thereof of the first film; and forming a second circuit layer (17;27) including a second superconductor circuit (15;26) and a second non-circuit part (16;25) by denaturing a part of the superconductive material or the simulant of the second thin film, such that the crystal structure and orientation of the second superconductor circuit (15;26) is the same as or similar to that of the second non-circuit part (16;25). A method of manufacturing a superconductive multilayer circuit according to claim 4, characterised in that said respective circuit layer forming step is carried out by implanting ions into the non-circuit part (13) of the superconductive material of the first or second thin film (11). A method of manufacturing a superconductive multilayer circuit according to claim 4, characterised in that said respective circuit layer forming step is carried out by discharging a particular atom of the non-circuit part (13) of the superconductive material of the first or second thin film. A method of manufacturing a superconductive multilayer circuit according to claim 6, characterised in that the particular atom is oxygen. A method of manufacturing a superconductive multilayer circuit according to claim 4, characterised in that said respective circuit layer forming step is carried out by introducing a particular atom to the circuit part (23) of the superconductive material of the first or second thin film (21). A method of manufacturing a superconductive multilayer circuit according to claim 8, characterised in that the particular atom is oxygen. A method of manufacturing a superconductive multilayer circuit according to claim 4, characterised in that the superconductive materials of the first and second thin films are a Y-Ba-Cu-O-system oxide material or a Bi-Sr-Ca-Cu-O-system oxide material. A method of manufacturing a superconductive multilayer circuit according to claim 10, characterised in that the superconductive material of the first and second thin films is a Y-Ba-Cu-O-system material, the simulant of which is a material to which an element selected from the group consisting of N, B, Ga, Co, Ni, Fe Zn, Cd and Be is implanted, and is YBa₂Cu₃O₇ having Tc higher than 77K. A method of manufacturing a superconductive multilayer circuit according to claim 10, characterised in that the substrate (10; 20) is made of a material selected from the group consisting of Cu, Ni, Fe, Co, Cr, Ag, Au, Pt, Mo, Pb, stainless steel, Cu-Ni alloy, Fe-Ni alloy, Fe-Ni-Co alloy, Ni-Cr-Fe alloy, Ag-Ni alloy, Cu-Fe alloy, Al₂O₃, SiO₂, ZrO₂, ThO₂, AlN, Si₃N₄, SiC, TiO₂, TiN, MgO, BaZrO₃, KTaO₃, FeAlO₄ and BaTiO₃. A method of manufacturing a superconductive multilayer circuit according to claim 4, characterised in that the respective circuit layer forming step includes a step of forming a simulant of a superconductor material, having a Tc lower than that of the superconductor material of the first or second thin films by forming a resist layer (12) on a portion of the thin film (11), implanting a particular atom to a portion of the thin film on which the resist layer (12) is not formed, removing the resist layer (12), and denaturing that part of the thin film using heat. A method of manufacturing a superconductive multilayer circuit according to claim 4, characterised in that the resist layer (12) is made of a photosensitive resin containing polymethylmethacrylate. A method of manufacturing a superconductive multilayer circuit according to claim 4, characterised in that a portion having a Tc lower than that of the respective superconductive material is formed by the denaturation. A method of manufacturing a superconductive multilayer circuit according to claim 4, further comprising the steps of; repeating the steps of forming the second thin film and forming the second circuit layer. A method of manufacturing a superconductive multilayer circuit according to claim 4, characterised in that the superconductive materials of the first and second thin films are ErBa₂Cu₂Oy. Supraleitende Vielschichtschaltung, welche umfaßt: ein Substrat (10; 20); eine erste Schaltungsschicht (14;24), gebildet auf dem Substrat (10;20) einschließlich eines ersten Schaltungsteils (11;23), gebildet aus Oxidsupraleitermaterial und mit einer Kristallstruktur, und einen ersten Nicht-Schaltungsteil (13; 21), gebildet aus einem ersten Simulanten des supraleitenden Materials; und zumindest eine zweite Schaltungsschicht (17, 27), gebildet auf der ersten Schaltungsschicht (14;24), und einschließend einen zweiten Schaltungsteil (15;26), gebildet aus Oxidsupraleitermaterial und mit der Kristallstruktur, und einen zweiten Nicht-Schaltungsteil (16;25), gebildet aus einem zweiten Simulanten des Supraleitermaterials des zweiten Schaltungsteils; wobei das Substrat (10;20) eine Kristallkonformität hat bezüglich des Supraleitermaterials des ersten Schaltungsteils; dadurch gekennzeichnet, daß die erste (14;24) und die zweite (17;27) Schaltungsschicht, dieselbe Kristallorientierung haben und miteinander verbunden sind; jeder der ersten (13; 21) und zweiten (16;25) Nicht-Schaltungsteile eine Kristallstruktur haben; die Kristallstruktur und die Orientierung des ersten Schaltungsteils (11;23) dieselbe ist wie oder ähnlich ist wie die des ersten Nicht-Schaltungsteils (13;21); die Kristallstruktur und Orientierung des zweiten Schaltungsteils (15;26) dieselbe ist wie oder ähnlich ist wie die des zweiten Nicht-Schaltungsteils (16;25); jeder der ersten und zweiten Simulanten ein nichtleitendes Material ist mit einer Temperatur Tc niedriger als der der supraleitenden Materialien der ersten und zweiten Schaltungsteile; und jeder der ersten und zweiten Simulanten Zn oder Fe beinhaltet. Supraleitende Vielschichtschaltungen nach Anspruch 1, dadurch gekennzeichnet, daß die supraleitenden Materialien der ersten und zweiten Schaltungsteile ErBa₂Cu₃Oy sind. Supraleitende Vielschichtschaltungen nach Anspruch 1, dadurch gekennzeichnet, daß eine c-Achse des Kristalls des supraleitenden Materials der ersten und zweiten Schaltungsteile im wesentlichen senkrecht ist zu einer Oberfläche des Substrats (10;20). Verfahren zum Herstellen einer supraleitenden Vielschichtschaltung mit den Schritten: Bilden eines ersten dünnen Films (11;21), hergestellt aus einem Oxidsupraleitermaterial oder einem Simulanten davon auf einem Substrat (10;20) mit einer Kristallkonformität bezüglich des supraleitenden Materials des Simulanten; Bilden einer ersten Schaltungsschicht (14;24) einschließlich einer ersten Supraleiterschaltung (11;23) und eines ersten Nicht-Schaltungsteils (13;31) durch denaturieren eines Teils des supraleitenden Materials oder des Simulanten, so daß die Kristallstruktur und die Orientierung der ersten Supraleiterschaltung (11;22) dieselbe ist, wie die oder ist wie die des ersten Nicht-Schaltungsteils (13;21); und Bilden eines zweiten dünnen Films (15;25), hergestellt aus einem Oxidsupraleitermaterial oder einem Simulanten davon in direkter Weise auf den ersten dünnen Film (11;21) von Supraleitermaterialien, so daß eine Kristallstruktur und Orientierung des supraleitenden Materials oder des Simulanten des zweiten Films davon konform ist mit einer Kristallstruktur und Orientierung des supraleitenden Materials oder des Simulanten davon vom ersten Film; und Bilden einer zweiten Schaltungsschicht (17;27) einschließlich einer zweiten Supraleiterschaltung (15;26) und eines zweiten Nicht-Schaltungsteils (16;25) zum Denaturieren eines Teils des supraleitenden Materials oder des Simulanten des zweiten dünnen Films, so daß die Kristallstruktur und Orientierung der zweiten supraleitenden Schaltung (15;25) dieselbe ist wie oder ähnlich ist wie die des zweiten Nicht-Schaltungsteils (16;25). Verfahren zum Herstellen einer supraleitenden Vielschichtschaltung nach Anspruch 4, dadurch gekennzeichnet, daß der jeweilige Schaltungsschicht-Bildungsschritt ausgeführt wird durch Implantieren von Ionen in den Nicht-Schaltungsteil (13) des supraleitenden Materials des ersten oder zweiten dünnen Films (11). Verfahren zum Herstellen einer supraleitenden Vielschichtschaltung nach Anspruch 4, dadurch gekennzeichnet, daß der jeweilige Schaltungsschicht-Bildungsschritt ausgeführt wird durch Entladen eines bestimmten Atoms des Nicht-Schaltungsteils (13) des supraleitenden Materials des ersten oder zweiten dünnen Films. Verfahren zum herstellen einer supraleitenden Vielschichtschaltung nach Anspruch 6, dadurch gekennzeichnet, daß das bestimmte Atom Sauerstoff ist. Verfahren zum Herstellen einer supraleitenden Vielschichtschaltung nach Anspruch 4, dadurch gekennzeichnet, daß der jeweilige Schaltungsschicht-Bildungsschritt ausgeführt wird durch Einführen eines bestimmten Atoms in den Schaltungsteil (23) des supraleitenden Materials des ersten oder zweiten dünnen Films (21). Verfahren zum Herstellen einer supraleitenden Vielschichtschaltung nach Anspruch 8, dadurch gekennzeichnet, daß das bestimmte Atom Sauerstoff ist. Verfahren zum Herstellen einer supraleitenden Vielschichtschaltung nach Anspruch 4, dadurch gekennzeichnet, daß die supraleitenden Materialien des ersten und zweiten dünnen Films ein Y-Ba-Cu-O-System-Oxidmaterial und ein Bi-Sr-Ca-Cu-O-System-Oxidmaterial sind. Verfahren zum Herstellen einer supraleitenden Vielschichtschaltung nach Anspruch 10, dadurch gekennzeichnet, daß das supraleitende Material des ersten und zweiten dünnen Films ein Y-Ba-Cu-O-System-Material ist, dessen Simulant ein Material ist, zu dem ein Element ausgewählt von der Gruppe bestehend aus N, B, Ga, Co, Ni, Fe, Zn, Cd, Be implantiert ist und YBa₂Cu₃O₇ mit einem Tc höher als 77 K ist. Verfahren zum Herstellen einer supraleitenden Vielschichtschaltung nach Anspruch 10, dadurch gekennzeichnet, daß das Substrat (10;20) hergestellt ist aus einem Material ausgewählt aus der Gruppe bestehend aus Cu, Ni, Fe, Co, Cr, Ag, Pt, Mo, Pb, rostfreiem Stahl, Cu-Ni-Legierung, Fe-Ni-Legierung, Fe-Ni-Co-Legierung, Ni-Cr-Fe-Legierung, Ag-Ni-Legierung, Cu-Fe-Legierung, Al₂O₃, SiO₂, ZrO₂, ThO₂, AlN, Si₃N₄, SiC, TiO₂, TiN, MgO, BaZrO₃, KTaO₃, FeAlO₄ und BaTiO₃ ist. Verfahren zum Herstellen einer supraleitenden Vielschichtschaltung nach Anspruch 4, dadurch gekennzeichnet, daß der jeweilige Schaltungsschicht-Bildungsschritt einen Schritt des Bildens eines Simulanten eines Supraleitermaterials enthält mit einem Tc niedriger als dem des Supraleitermaterials des ersten oder zweiten dünnen Films durch Bilden einer Photolackschicht (12) auf einem Abschnitt des dünnen Films (11), Implantieren eines bestimmten Atoms auf einen Abschnitt des dünnen Films, auf dem die Photolackschicht (12) nicht gebildet ist, Entfernen der Photolackschicht (12) und Denaturieren des Teils des dünnen Films unter Benutzung von Wärme. Verfahren zum Herstellen einer supraleitenden Vielschichtschaltung nach Anspruch 4, dadurch gekennzeichnet, daß die Photolackschicht (11) hergestellt ist aus einem photosensitiven Harz enthaltend Polymethylmethacrylat. Verfahren zum Herstellen einer supraleitenden Vielschichtschaltung gemäß Anspruch 4, dadurch gekennzeichnet, daß ein Abschnitt mit einem hohen Tc niedriger als dem des jeweiligen supraleitenden Materials gebildet wird durch die Denaturierung. Verfahren zum Herstellen einer supraleitenden Vielschichtschaltung nach Anspruch 4, gekennzeichnet durch die Schritte: Wiederholen der Schritt des Bildens des zweiten dünnen Films und Bilden der zweiten Schaltungsschicht. Verfahren zum Herstellen einer supraleitenden Vielschichtschaltung nach Anspruch 4, dadurch gekennzeichnet daß die supraleitenden Materialien des ersten und zweiten dünnen Films ErBa₂Cu₂Oy sind. Circuit supraconducteur multicouche, comprenant: un support (10; 20); une première couche à circuit (14; 24) formée sur le support (10; 20), comprenant une première partie à circuit (11; 23) formée par un matériau d'oxyde supraconducteur et présentant une structure cristalline, et une première partie non à circuit (13; 21) formée par un premier simulacre du matériau supraconducteur; et au moins une deuxième couche à circuit (17; 27) formée sur la première couche à circuit (14; 24) et comprenant une deuxième partie à circuit (15; 26) formée par un matériau d'oxyde supraconducteur et présentant ladite structure cristalline, et une deuxième partie non à circuit (16; 25) formée par un deuxième simulacre du matériau supraconducteur de la deuxième partie à circuit; dans lequel ledit support (10; 20) présente une conformité cristallographique avec ledit matériau supraconducteur de la première partie à circuit;
caractérisé en ce que ladite première (14; 24) et ladite deuxième (17; 27) couches à circuit présentent la même orientation cristalline et sont liées l'une à l'autre; la première (13; 21) et la deuxième (16; 25) parties non à circuit présentent chacune une structure cristalline; la structure et l'orientation cristallines de la première partie à circuit (11; 23) sont identiques ou similaires à celles de la première partie non à circuit (13; 21); la structure et l'orientation cristallines de la deuxième partie à circuit (15; 26) sont identiques ou similaires à celles de la deuxième partie non à circuit (16; 25); le premier et le deuxième simulacres sont chacun un matériau non-conducteur présentant une température Tc inférieure à celle des matériaux supraconducteurs de la première et de la deuxième parties à circuit; et le premier et le deuxième simulacres comprennent chacun du Zn ou du Fe. Circuit supraconducteur multicouche selon la revendication 1, caractérisé en ce que les matériaux supraconducteurs de la première et de la deuxième parties à circuit sont ErBa₂Cu₃Oy. Circuit supraconducteur multicouche selon la revendication 1, caractérisé en ce qu'un axe c du cristal du matériau supraconducteur de la première et de la deuxième parties à circuit est essentiellement perpendiculaire à la surface du support (10; 20). Procédé de fabrication d'un circuit supraconducteur multicouche, comportant les étapes consistant à: former un premier film mince (11; 21) constitué d'un matériau d'oxyde supraconducteur ou d'un simulacre de celui-ci sur un support (10; 20) présentant une conformité cristalline avec le matériau supraconducteur ou avec le simulacre; former une première couche à circuit (14; 24) comprenant un premier circuit supraconducteur (11; 23) et une première partie non à circuit (13; 21), en dénaturant une partie du matériau supraconducteur ou du simulacre de telle manière que la structure et l'orientation cristallines du premier circuit supraconducteur (11; 22) soient identiques ou similaires à celles de la première partie non à circuit (13; 21); et former un deuxième film mince (15; 25) constitué d'un matériau d'oxyde supraconducteur ou d'un simulacre de celui-ci directement sur le premier film mince (11; 21) de matériaux supraconducteurs, de telle manière que la structure et l'orientation cristallines du matériau supraconducteur ou du simulacre de son deuxième film soient conformes avec la structure et l'orientation cristallines du matériau supraconducteur ou de son simulacre dans le premier film; et former une deuxième couche à circuit (17; 27) comprenant un deuxième circuit supraconducteur (15; 26) et une deuxième partie non à circuit (16; 25), en dénaturant une partie du matériau supraconducteur ou du simulacre du deuxième film mince, de telle manière que la structure et l'orientation cristallines du deuxième circuit supraconducteur (15; 26) soient identiques ou similaires à celles de la partie non à circuit (16; 25). Procédé de fabrication d'un circuit supraconducteur multicouche selon la revendication 4, caractérisé en ce que ladite étape de formation de la couche à circuit respective est mise en oeuvre en implantant des ions dans la partie non à circuit (13) du matériau supraconducteur du premier ou du deuxième film mince (11). Procédé de fabrication d'un circuit supraconducteur multicouche selon la revendication 4, caractérisé en ce que ladite étape de formation de la couche à circuit respective est mise en oeuvre en retirant un atome particulier de la partie non à circuit (13) du matériau supraconducteur du premier ou du deuxième film mince. Procédé de fabrication d'un circuit supraconducteur multicouche selon la revendication 6 caractérisé en ce que l'atome particulier est l'oxygène. Procédé de fabrication d'un circuit supraconducteur multicouche selon la revendication 4, caractérisé en ce que l'étape de formation de la couche à circuit respective est mise en oeuvre en introduisant un atome particulier dans la partie à circuit (23) du matériau supraconducteur du premier ou du deuxième film mince (21). Procédé de fabrication d'un circuit supraconducteur multicouche selon la revendication 8, caractérisé en ce que l'atome particulier est l'oxygène. Procédé de fabrication d'un circuit supraconducteur multicouche selon la revendication 4, caractérisé en ce que les matériaux supraconducteurs du premier et du deuxième films minces sont un matériau d'oxyde du système Y-Ba-Cu-O ou un matériau d'oxyde du système Bi-Sr-Ca-Cu-O. Procédé de fabrication d'un circuit supraconducteur multicouche selon la revendication 10, caractérisé en ce que le matériau supraconducteur du premier et du deuxième films minces est un matériau du système Y-Ba-Cu-O, dont le simulacre est un matériau dans lequel est implanté un élément choisi dans le groupe comprenant N, B, Ga, Co, Ni, Fe, Zn, Cd et Be, et est YBa₂Cu₃O₇ présentant une Tc supérieure à 77 K. Procédé de fabrication d'un circuit supraconducteur multicouche selon la revendication 10, caractérisé en ce que le support (10; 20) est constitué d'un matériau choisi dans le groupe comprenant Cu, Ni, Fe, Co, Cr, Ag, Au, Pt, Mo, Pb, acier inoxydable, alliage Cu-Ni, alliage Fe-Ni, alliage Fe-Ni-Co, alliage Ni-Cr-Fe, alliage Ag-Ni, alliage Cu-Fe, Al₂O₃, SiO₂, ZrO₂, ThO₂, AlN, Si₃N₄, SiC, TiO₂, TiN, MgO, BaZrO₃, KTaO₃, FeAlO₄ et BaTiO₃. Procédé de fabrication d'un circuit supraconducteur multicouche selon la revendication 4, caractérisé en ce que l'étape de formation de la couche à circuit respective comprend une étape consistant à former un simulacre d'un matériau supraconducteur présentant une Tc inférieure à celle du matériau supraconducteur du premier et du second film mince, en formant une couche de réserve (12) sur une partie du film mince (11), en implantant un atome particulier dans une partie du film mince sur laquelle la couche de réserve (12) n'est pas formée, en enlevant la couche de réserve (12), et en dénaturant cette partie du film mince par la chaleur. Procédé de fabrication d'un circuit supraconducteur multicouche selon la revendication 4, caractérisé en ce que la couche de réserve (12) est constituée d'une résine photosensible contenant du méthacrylate de polyméthyle. Procédé de fabrication d'un circuit supraconducteur multicouche selon la revendication 4, caractérisé en ce qu'une partie présentant une Tc inférieure à celle du matériau supraconducteur correspondant est formée par dénaturation. Procédé de fabrication d'un circuit supraconducteur multicouche selon la revendication 4, comprenant en outre les étapes consistant à: répéter les étapes de formation du deuxième film mince et de formation de la deuxième couche à circuit. Procédé de fabrication d'un circuit supraconducteur multicouche selon la revendication 4, caractérisé en ce que les matériaux supraconducteurs du premier et du second films minces sont ErBa₂Cu₂Oy.