(19)
(11) EP 0 416 626 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
29.05.1991 Bulletin 1991/22

(43) Date of publication A2:
13.03.1991 Bulletin 1991/11

(21) Application number: 90117200.7

(22) Date of filing: 06.09.1990
(51) International Patent Classification (IPC)5: H01J 1/30, H01J 9/02
(84) Designated Contracting States:
DE FR GB

(30) Priority: 07.09.1989 JP 233943/89
07.09.1989 JP 233945/89
22.08.1990 JP 221713/90

(71) Applicant: CANON KABUSHIKI KAISHA
Tokyo (JP)

(72) Inventors:
  • Takeda, Toshihiko, c/o Canon Kabushiki Kaisha
    Ohta-ku, Tokyo (JP)
  • Tsukamoto, Takeo, c/o Canon Kabushiki Kaisha
    Ohta-ku, Tokyo (JP)
  • Watanabe, Nobuo, c/o Canon Kabushiki Kaisha
    Ohta-ku, Tokyo (JP)
  • Okunuki, Masahiko, c/o Canon Kabushiki Kaisha
    Ohta-ku, Tokyo (JP)

(74) Representative: Pellmann, Hans-Bernd, Dipl.-Ing. et al
Patentanwaltsbüro Tiedtke-Bühling-Kinne & Partner Bavariaring 4
80336 München
80336 München (DE)


(56) References cited: : 
   
       


    (54) Electron emitting semiconductor device


    (57) An electron emitting semiconductor device comprises a P-semiconductor layer (14) formed on a semi­conductive substrate (11); a Shottky barrier electrode (16) formed on the P-semiconductor layer; plural P⁺-area units (15) positioned under and facing to the Shottky barrier electrode; and an N⁺-area (13) in the vicinity of said P⁺-area units.







    Search report