(19)
(11) EP 0 417 190 A1

(12)

(43) Date of publication:
20.03.1991 Bulletin 1991/12

(21) Application number: 89906913.0

(22) Date of filing: 02.06.1989
(51) International Patent Classification (IPC): 
C30B 28/ 14( . )
C23C 16/ 02( . )
C30B 25/ 02( . )
C30B 29/ 04( . )
H01L 21/ 84( . )
B01D 9/ 02( . )
C30B 7/ 00( . )
C30B 25/ 18( . )
H01L 21/ 205( . )
(86) International application number:
PCT/US1989/002412
(87) International publication number:
WO 1989/011897 (14.12.1989 Gazette 1989/29)
(84) Designated Contracting States:
DE GB

(30) Priority: 03.06.1988 US 19880202877

(71) Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Cambridge, MA 02139 (US)

(72) Inventors:
  • GEIS, Michael, W.
    Acton, MA 01720 (US)
  • EFREMOW, Nikolay, N.
    Melrose, MA 02176 (US)
  • SMITH, Henry, I.
    Sudbury, MA 01776 (US)

(74) Representative: Deans, Michael John Percy, et al 
Lloyd Wise, Tregear & CO. Norman House 105-109 Strand
London WC2R OAE
London WC2R OAE (GB)

   


(54) SILICON DIOXIDE FILMS ON DIAMOND