(57) A method of fabricating small sized, physically discrete, two-terminal non-linear
devices in bulk comprising forming on the surface of a temporary support (10;24) a
multiple layer formation consisting of a series of thin film layers (12,14,16; 25,26,27,28)
of selected materials and uniform thicknesses constituting a diode structure, for
example a MIM type or p-n-p punch-through type structure, scribing the multiple layer
formation in a regular pattern to define portions, (20;30), and thereafter removing
the support and separating the portions into physically discrete elements, each of
which forms an individual non-linear device. Large numbers of devices, typically around
20µm across, are produced simultaneously each exhibiting substantially identical physical
and electrical properties.
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