(19)
(11) EP 0 424 925 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
15.04.1992 Bulletin 1992/16

(43) Date of publication A2:
02.05.1991 Bulletin 1991/18

(21) Application number: 90120432.1

(22) Date of filing: 24.10.1990
(51) International Patent Classification (IPC)5: H01L 21/265, H01J 37/317
(84) Designated Contracting States:
DE FR GB

(30) Priority: 25.10.1989 JP 276012/89

(71) Applicant: KABUSHIKI KAISHA TOSHIBA
Kawasaki-shi, Kanagawa-ken 210 (JP)

(72) Inventors:
  • Yoshida, Yukimasa
    Yokohama-shi, Kanagawa-ken (JP)
  • Okumura, Katsuya
    Yokohama-shi, Kanagawa-ken (JP)

(74) Representative: Lehn, Werner, Dipl.-Ing. et al
Hoffmann, Eitle & Partner, Patentanwälte, Postfach 81 04 20
81904 München
81904 München (DE)


(56) References cited: : 
   
       


    (54) Method of removing electric charge accumulated on a semiconductor substrate in ion implantation


    (57) Disclosed is a method of removing electric charges (28) accumulated on a semiconductor substrate (21) in ion implantation by irradiating a highly accelerated electron beam (15) with acceleration energy of 1 to 50 KeV into the portion irradiated with ion beams (11) when impurity layer is formed by implanting the ion beams (11) in the semiconductor substrate (21).







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