(19)
(11) EP 0 443 154 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
02.01.1992 Bulletin 1992/01

(43) Date of publication A2:
28.08.1991 Bulletin 1991/35

(21) Application number: 90124468.1

(22) Date of filing: 17.12.1990
(51) International Patent Classification (IPC)5: H01J 37/32, H05H 1/46
(84) Designated Contracting States:
DE NL

(30) Priority: 23.02.1990 JP 41004/90

(71) Applicant: HITACHI, LTD.
Chiyoda-ku, Tokyo 101 (JP)

(72) Inventors:
  • Mizutani, Tatsumi
    Koganei-shi (JP)
  • Yunogami, Takashi
    Kokubunji-shi (JP)

(74) Representative: Strehl Schübel-Hopf Groening & Partner 
Maximilianstrasse 54
80538 München
80538 München (DE)


(56) References cited: : 
   
       


    (54) Apparatus for and method of surface treatment for microelectronic devices


    (57) An apparatus for surface treatment according to the present invention used for carrying out dry etching, thin film deposition and so forth is provided with a neutral beam etching apparatus in order to improve etching rate. In an embodiment, microwave wave-guides (1, 2) forming a duplex tube, a discharge tube (6), a pair of solenoids (4) arranged coaxially, a multiaperture electrode (3) for extracting an ion beam, gas supply pipes (5, 7), a set of charged particle retarding grids (8), a device (10) for controlling temperature of a specimen (9) and a vacuum unit (11) are provided.






    Search report