(19)
(11) EP 0 449 229 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
01.04.1992 Bulletin 1992/14

(43) Date of publication A2:
02.10.1991 Bulletin 1991/40

(21) Application number: 91104806.4

(22) Date of filing: 26.03.1991
(51) International Patent Classification (IPC)5: H01L 29/04, H01L 21/20
(84) Designated Contracting States:
DE GB

(30) Priority: 28.03.1990 JP 76882/90

(71) Applicant: HITACHI, LTD.
Chiyoda-ku, Tokyo 100 (JP)

(72) Inventors:
  • Mochizuki, Kazuhiro
    Kodaira-shi (JP)
  • Goto, Shigeo
    Tsukuba-shi (JP)
  • Kusano, Chushirou, Sankopo Higashitokorozawa 304
    Tokorozawa-shi (JP)
  • Kawata, Masahiko, Hitachi Owada Apato D-402
    Hachioji-shi (JP)
  • Masuda, Hiroshi, Hitachi Koyasudai Apato, 32-D-101
    Hachioji-shi (JP)
  • Mitani, Katsuhiko
    Kodaira-shi (JP)
  • Takahashi, Susumu
    Nishitama-gun, Tokyo (JP)

(74) Representative: Strehl Schübel-Hopf Groening & Partner 
Maximilianstrasse 54
80538 München
80538 München (DE)


(56) References cited: : 
   
       


    (54) Semiconductor device using a particular orientation of crystalline planes


    (57) A semiconductor device comprises a semiconductor substrate (1) formed by a first single crystalline semiconductor material and semiconductor layers (3) formed on the semiconductor substrate (1) by a second single crystalline semiconductor material doped with an element which can easily surface segregate. The surface of the semiconductor substrate (1) is formed of a crystalline plane substantially equivalent to a facet plane (4) which is formed on the surface of the second single crystalline semiconductor material if the second single crystalline semiconductor material is epitaxially grown with being doped with the element on a (100) plane of the first single crystalline semiconductor material.






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