(19)
(11) EP 0 450 516 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
05.08.1992 Bulletin 1992/32

(43) Date of publication A2:
09.10.1991 Bulletin 1991/41

(21) Application number: 91105007.8

(22) Date of filing: 28.03.1991
(51) International Patent Classification (IPC)5: G11C 7/06
(84) Designated Contracting States:
DE FR GB

(30) Priority: 29.03.1990 JP 82078/90

(71) Applicants:
  • KABUSHIKI KAISHA TOSHIBA
    Kawasaki-shi, Kanagawa-ken 210 (JP)
  • TOSHIBA MICRO-ELECTRONICS CORPORATION
    Kawasaki-ku, Kawasaki-shi (JP)

(72) Inventors:
  • Muraoka, Kazuyoshi
    Yokohama-shi, Kanagawa-Ken (JP)
  • Koyanagi, Masaru
    Tokyo-To (JP)
  • Yamada, Minoru
    Kawasaki-shi, Kanagawa-Ken (JP)

(74) Representative: Lehn, Werner, Dipl.-Ing. et al
Hoffmann, Eitle & Partner, Patentanwälte, Postfach 81 04 20
81904 München
81904 München (DE)


(56) References cited: : 
   
       


    (54) Semiconductor memory


    (57) An improved semiconductor memory which comprises a plurality of sense amplifier circuits (10) provided corresponding to each bit line (S1) of a plurality of columns, a first common line (SAN) which is connected in common to the sense amplifier circuits, a second common line which is connected to the first common line, a first switching element (Qsan) which is connected between the second common line and a reference voltage potential terminal and a second switching element (Qn2) which is connected to the first common line and the reference voltage potential, the second switching element corresponding to the first common line connected to one of the sense amplifier circuits being made conductive in response to selection of the sense amplifier is disclosed.






    Search report