(19)
(11) EP 0 501 785 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
19.11.1992 Bulletin 1992/47

(43) Date of publication A2:
02.09.1992 Bulletin 1992/36

(21) Application number: 92301632.3

(22) Date of filing: 26.02.1992
(51) International Patent Classification (IPC)5: H01J 1/30, H01J 17/49, H01J 9/02
(84) Designated Contracting States:
DE FR GB IT NL SE

(30) Priority: 01.03.1991 US 664184

(71) Applicant: RAYTHEON COMPANY
Lexington Massachusetts 02173 (US)

(72) Inventor:
  • Feist, Wolfgang M.
    Burlington, Massachusetts (US)

(74) Representative: Jackson, David Spence et al
REDDIE & GROSE 16, Theobalds Road
London, WC1X 8PL
London, WC1X 8PL (GB)


(56) References cited: : 
   
       


    (54) Electron emitting structure and manufacturing method


    (57) A field emitter includes an electron emitting structure (112) spaced from an anode structure (114), with the intervening gap (113) being substantially evacuated. The electron emitting structure (112) includes a first electrically conductive layer (128) spaced by an insulating layer (130) from a second conductive layer (132), and a generally circular aperture (134) disposed through the layers (128,132). The anode structure (114) includes an electrically conductive layer (142). Electrostatic forces, provided from a potential applied between the first conductive layer (128) and the anode structure (114), cause an electron beam to be drawn from a cathode provided by a peripheral edge portion (127a) of the first conductive layer (128) within the aperture (134) onto an adjacent surface portion of the anode structure (114). Such field emission occurs under the control of a potential applied between the first and second conductive layers (128,132) of the electron emitting structure with the second conductive layer (132) functioning as a control electrode of the emitting structure. The anode structure (114) has a phosphor layer (144) which converts the electrical energy from the electron bombardment into visible light energy. In one embodiment (Fig. 6), a potential applied to a third conductive layer (360) of the emitting structure (312) serves to focus the electron stream on the anode structure (314). Methods of manufacturing the electron emitting structures employ successive steps of layer deposition and subsequent selective etching.






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