Dynamic RAM and process for producing same

(19)

(11)

EP 0 503 199 A3

(12)	EUROPEAN PATENT APPLICATION

(88)	Date of publication A3:
	04.11.1992 Bulletin 1992/45

(43)	Date of publication A2:
	16.09.1992 Bulletin 1992/38

(21)	Application number: 91311823.8

(22)	Date of filing: 19.12.1991

(51)	International Patent Classification (IPC)⁵: H01L 27/108

(84)	Designated Contracting States:
	DE GB IT NL

(30)

Priority:

13.03.1991 JP 48142/91

(71)	Applicant: SHARP KABUSHIKI KAISHA
	Osaka 545 (JP)

(72)	Inventor:
	Adan,Alberto Oscar Tenri-shi, Nara-ken (JP)

(74)	Representative: Brown, Kenneth Richard et al
	R.G.C. Jenkins & Co. 26 Caxton Street London SW1H 0RJ London SW1H 0RJ (GB)

(56)

References cited: :

(54)	Dynamic RAM and process for producing same

(57) A FEC-DRAM of 3 elements/2 bits type having a stacked capacitor of increased capacitance to ensure integration with an increased density. The stacked capacitor is formed as embedded in a trench, and local wiring is provided to form an electric contact on an element isolation region. When required, the stacked capacitor is made to extend onto a word line region.

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