| (19) |
 |
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(11) |
EP 0 513 478 A3 |
| (12) |
EUROPEAN PATENT APPLICATION |
| (88) |
Date of publication A3: |
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06.10.1993 Bulletin 1993/40 |
| (43) |
Date of publication A2: |
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19.11.1992 Bulletin 1992/47 |
| (22) |
Date of filing: 13.02.1992 |
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| (51) |
International Patent Classification (IPC)5: H01L 41/24 |
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| (84) |
Designated Contracting States: |
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DE FR GB |
| (30) |
Priority: |
13.02.1991 JP 40592/91
|
| (71) |
Applicant: MITSUBISHI MATERIALS CORPORATION |
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Chiyoda-ku
Tokyo (JP) |
|
| (72) |
Inventors: |
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- Ogi, Katsumi
Mitsubishi Materiaru K.K.
Omiya-shi
Saitama-ken (JP)
- Soyama, Nobuyui
Mitsubishi Materiaru K.K.
Omiya-shi
Saitama-ken (JP)
- Mieda,Akihiko,
Mitsubishi Materiaru K.K.
Omiya-shi
Saitama-ken (JP)
|
| (74) |
Representative: Strehl Schübel-Hopf Groening & Partner |
|
Maximilianstrasse 54
80538 München
80538 München (DE) |
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| |
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| (54) |
Method for controlling crystal orientation of ferroelectric thin film |
(57) In the production of ferroelectric PZT of PLZT thin film by the sol-gel method, application
of precursor solution (sol) onto a substrate is followed by heat-treatment for pyrolysis
at 150 - 250 °C, 250 - 359 °C, or 450 - 550 °C, and further firing for crystallization
at 500 - 800 °C, whereby crystal orientation in the direction of the (111) plane,
or the (111) and (100) planes, or the (100) and (200) planes can be effected.